DE68922543D1 - Photodiode aus amorphem Silizium und ihr Herstellungsverfahren. - Google Patents
Photodiode aus amorphem Silizium und ihr Herstellungsverfahren.Info
- Publication number
- DE68922543D1 DE68922543D1 DE68922543T DE68922543T DE68922543D1 DE 68922543 D1 DE68922543 D1 DE 68922543D1 DE 68922543 T DE68922543 T DE 68922543T DE 68922543 T DE68922543 T DE 68922543T DE 68922543 D1 DE68922543 D1 DE 68922543D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing process
- amorphous silicon
- silicon photodiode
- photodiode
- amorphous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/095—Devices sensitive to infrared, visible or ultraviolet radiation comprising amorphous semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
- H01L31/204—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table including AIVBIV alloys, e.g. SiGe, SiC
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Electromagnetism (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63201066A JPH0250485A (ja) | 1988-08-12 | 1988-08-12 | 光導電体 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE68922543D1 true DE68922543D1 (de) | 1995-06-14 |
Family
ID=16434817
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE68922543T Expired - Lifetime DE68922543D1 (de) | 1988-08-12 | 1989-08-10 | Photodiode aus amorphem Silizium und ihr Herstellungsverfahren. |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0354853B1 (de) |
JP (1) | JPH0250485A (de) |
DE (1) | DE68922543D1 (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4202158C1 (de) * | 1992-01-27 | 1993-07-22 | Siemens Ag, 8000 Muenchen, De | |
US5421957A (en) * | 1993-07-30 | 1995-06-06 | Applied Materials, Inc. | Low temperature etching in cold-wall CVD systems |
US5988187A (en) | 1996-07-09 | 1999-11-23 | Lam Research Corporation | Chemical vapor deposition system with a plasma chamber having separate process gas and cleaning gas injection ports |
EP0899836A1 (de) * | 1997-08-27 | 1999-03-03 | Xerox Corporation | Halbleiterlaservorrichtung |
US6037644A (en) * | 1997-09-12 | 2000-03-14 | The Whitaker Corporation | Semi-transparent monitor detector for surface emitting light emitting devices |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6052064A (ja) * | 1983-08-31 | 1985-03-23 | Canon Inc | 光導電部材 |
DE3546544C2 (de) * | 1984-02-28 | 1990-02-15 | Sharp K.K., Osaka, Jp | |
JPH0624250B2 (ja) * | 1984-11-01 | 1994-03-30 | セイコーエプソン株式会社 | 固体撮像素子 |
EP0215968A1 (de) * | 1985-09-21 | 1987-04-01 | Leybold Aktiengesellschaft | Einrichtung zur Herstellung von Solarzellen mit amorphes Silizium enthaltenden Schichten, Verfahren zum Betrieb dieser Einrichtung und Kathode zur Verwendung in dieser Einrichtung |
JPS63160335A (ja) * | 1986-12-24 | 1988-07-04 | Kyocera Corp | ガスエツチング方法 |
-
1988
- 1988-08-12 JP JP63201066A patent/JPH0250485A/ja active Pending
-
1989
- 1989-08-10 DE DE68922543T patent/DE68922543D1/de not_active Expired - Lifetime
- 1989-08-10 EP EP89402272A patent/EP0354853B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0354853A2 (de) | 1990-02-14 |
EP0354853A3 (en) | 1990-10-24 |
EP0354853B1 (de) | 1995-05-10 |
JPH0250485A (ja) | 1990-02-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69016910D1 (de) | Photovoltaische Anordnung und ihr Herstellungsverfahren. | |
DE69010843T2 (de) | Sonnenblende und ihr Herstellungsverfahren. | |
DE69024007T2 (de) | Halbleiteranordnung aus amorphem Silizium. | |
DE69210942T2 (de) | Halbleiterherstellung | |
DE69430511T2 (de) | Halbleiteranordnung und Herstellungverfahren | |
DE69534938D1 (de) | Photovoltaisches Bauelement und Herstellungsverfahren | |
DE68925374T2 (de) | Halbleiterherstellungsvorrichtung | |
DE69208937D1 (de) | Halbleiter-Herstellungseinrichtung | |
DE69522757T2 (de) | Analoger Fotodioden-Baustein und Herstellungsverfahren | |
DE69429906D1 (de) | Halbleiterstruktur und Herstellungsverfahren | |
DE68917428T2 (de) | Sonnenzelle und ihr Herstellungsverfahren. | |
DE68907617T2 (de) | Verbindungsvorrichtung und ihr herstellungsverfahren. | |
AU8353891A (en) | Semiconductor element manufacturing process | |
DE3766289D1 (de) | Gesinterte siliziumnitridkoerper und ihr herstellungsverfahren. | |
DE69022864T2 (de) | Komplementäre Transistorstruktur und deren Herstellungsverfahren. | |
DE69128464T2 (de) | Halbleiteranordnung und ihr herstellungsverfahren | |
DE69222328T2 (de) | Diamantkörper, blätteriges Diamantsubstrat und Herstellungsverfahren | |
EP0342953A3 (en) | Semiconductor optical amplifying element | |
DE3871503D1 (de) | Halbleiterlaservorrichtung und herstellung derselben. | |
DE68922543D1 (de) | Photodiode aus amorphem Silizium und ihr Herstellungsverfahren. | |
DE69114435T2 (de) | Supraleitendes Bauelement und dessen Herstellungsverfahren. | |
DE69124289T2 (de) | Monolithische Halbleiteranordnung und entsprechendes Herstellungsverfahren | |
DE3650363T2 (de) | Photoelektrische Umwandlungsvorrichtung und ihr Herstellungsverfahren. | |
DE69202426D1 (de) | Ablenkeinheit und Herstellungsverfahren. | |
DE69111413T2 (de) | Halbleitervorrichtung und ihr herstellungsverfahren. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8332 | No legal effect for de |