DE68918821D1 - Verfahren zur Fluoreszenzverbesserung von Titandotierten Oxid-Kristallen für abstimmbaren Laser. - Google Patents

Verfahren zur Fluoreszenzverbesserung von Titandotierten Oxid-Kristallen für abstimmbaren Laser.

Info

Publication number
DE68918821D1
DE68918821D1 DE68918821T DE68918821T DE68918821D1 DE 68918821 D1 DE68918821 D1 DE 68918821D1 DE 68918821 T DE68918821 T DE 68918821T DE 68918821 T DE68918821 T DE 68918821T DE 68918821 D1 DE68918821 D1 DE 68918821D1
Authority
DE
Germany
Prior art keywords
fluorescence
titanium
improving
doped oxide
oxide crystals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE68918821T
Other languages
English (en)
Other versions
DE68918821T2 (de
Inventor
Milan Rastislav Kokta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Union Carbide Chemicals and Plastics Technology LLC
Union Carbide Corp
Original Assignee
Union Carbide Chemicals and Plastics Technology LLC
Union Carbide Chemicals and Plastics Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Union Carbide Chemicals and Plastics Technology LLC, Union Carbide Chemicals and Plastics Co Inc filed Critical Union Carbide Chemicals and Plastics Technology LLC
Publication of DE68918821D1 publication Critical patent/DE68918821D1/de
Application granted granted Critical
Publication of DE68918821T2 publication Critical patent/DE68918821T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/20—Aluminium oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Lasers (AREA)
  • Luminescent Compositions (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
DE68918821T 1988-12-21 1989-12-20 Verfahren zur Fluoreszenzverbesserung von Titandotierten Oxid-Kristallen für abstimmbaren Laser. Expired - Lifetime DE68918821T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/287,011 US4988402A (en) 1988-02-09 1988-12-21 Processes for enhancing fluorescence of tunable titanium-doped oxide laser crystals

Publications (2)

Publication Number Publication Date
DE68918821D1 true DE68918821D1 (de) 1994-11-17
DE68918821T2 DE68918821T2 (de) 1995-02-09

Family

ID=23101091

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68918821T Expired - Lifetime DE68918821T2 (de) 1988-12-21 1989-12-20 Verfahren zur Fluoreszenzverbesserung von Titandotierten Oxid-Kristallen für abstimmbaren Laser.

Country Status (5)

Country Link
US (1) US4988402A (de)
EP (1) EP0374880B1 (de)
JP (1) JPH0744306B2 (de)
CA (1) CA2006218C (de)
DE (1) DE68918821T2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3351477B2 (ja) * 1993-02-04 2002-11-25 理化学研究所 固体レーザー結晶薄膜作成方法および固体レーザー結晶薄膜作成装置
US6996137B2 (en) * 2002-08-06 2006-02-07 Raytheon Company Solid-state devices with radial dopant valence profile
JP4751973B2 (ja) * 2003-10-30 2011-08-17 独立行政法人科学技術振興機構 電界発光材料及びそれを用いた電界発光素子
JP4507862B2 (ja) * 2004-12-01 2010-07-21 株式会社日立プラズマパテントライセンシング 蛍光体及びそれを用いた装置
US9250178B2 (en) * 2011-10-07 2016-02-02 Kla-Tencor Corporation Passivation of nonlinear optical crystals
CZ201613A3 (cs) 2016-01-12 2017-04-12 Preciosa, A.S. Způsob zvýšení luminiscenční účinnosti titanem dopovaného oxidového krystalu
JP6502286B2 (ja) * 2016-04-28 2019-04-17 日本電信電話株式会社 単結晶ファイバの製造方法
CN110295392A (zh) * 2019-06-17 2019-10-01 南京同溧晶体材料研究院有限公司 一种可调谐激光晶体掺铬钪酸钆及其制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2050703A5 (de) * 1969-06-20 1971-04-02 Comp Generale Electricite
US3715194A (en) * 1970-10-29 1973-02-06 Union Carbide Corp Melt grown alumina crystals and process therefor
US4038117A (en) * 1975-09-04 1977-07-26 Ilc Technology, Inc. Process for gas polishing sapphire and the like
US4711696A (en) * 1985-05-20 1987-12-08 Union Carbide Corporation Process for enhancing Ti:Al2 O3 tunable laser crystal fluorescence by controlling crystal growth atmosphere
US4587035A (en) * 1985-05-20 1986-05-06 Union Carbide Corporation Process for enhancing Ti:Al2 O3 tunable laser crystal fluorescence by annealing
JPH0744304B2 (ja) * 1986-03-17 1995-05-15 三井金属鉱業株式会社 固体レ−ザホスト
US4824598A (en) * 1987-10-20 1989-04-25 The United States Of America As Represented By The United States Department Of Energy Synthetic laser medium
US4836953A (en) * 1988-02-09 1989-06-06 Union Carbide Corporation Processes for enhancing fluorescence of TI:A1203 tunable laser crystals

Also Published As

Publication number Publication date
US4988402A (en) 1991-01-29
JPH02283082A (ja) 1990-11-20
JPH0744306B2 (ja) 1995-05-15
EP0374880A2 (de) 1990-06-27
EP0374880B1 (de) 1994-10-12
DE68918821T2 (de) 1995-02-09
CA2006218C (en) 1996-07-16
CA2006218A1 (en) 1990-06-21
EP0374880A3 (de) 1991-08-14

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