DE68915251T2 - Monolithische Struktur für einen IR-Detektor oder IR-Bildsensor und Verfahren zu ihrer Herstellung. - Google Patents

Monolithische Struktur für einen IR-Detektor oder IR-Bildsensor und Verfahren zu ihrer Herstellung.

Info

Publication number
DE68915251T2
DE68915251T2 DE68915251T DE68915251T DE68915251T2 DE 68915251 T2 DE68915251 T2 DE 68915251T2 DE 68915251 T DE68915251 T DE 68915251T DE 68915251 T DE68915251 T DE 68915251T DE 68915251 T2 DE68915251 T2 DE 68915251T2
Authority
DE
Germany
Prior art keywords
detector
manufacture
image sensor
monolithic structure
monolithic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68915251T
Other languages
English (en)
Other versions
DE68915251D1 (de
Inventor
Luc Audaire
Jean-Claude Peuzin
Bernard Schaub
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of DE68915251D1 publication Critical patent/DE68915251D1/de
Application granted granted Critical
Publication of DE68915251T2 publication Critical patent/DE68915251T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/34—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using capacitors, e.g. pyroelectric capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
    • H10N15/10—Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
DE68915251T 1988-11-29 1989-11-27 Monolithische Struktur für einen IR-Detektor oder IR-Bildsensor und Verfahren zu ihrer Herstellung. Expired - Fee Related DE68915251T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8815581A FR2639784B1 (fr) 1988-11-29 1988-11-29 Structure monolithique de detection ou d'imagerie infrarouge et son procede de fabrication

Publications (2)

Publication Number Publication Date
DE68915251D1 DE68915251D1 (de) 1994-06-16
DE68915251T2 true DE68915251T2 (de) 1994-11-24

Family

ID=9372368

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68915251T Expired - Fee Related DE68915251T2 (de) 1988-11-29 1989-11-27 Monolithische Struktur für einen IR-Detektor oder IR-Bildsensor und Verfahren zu ihrer Herstellung.

Country Status (6)

Country Link
US (1) US5008541A (de)
EP (1) EP0371868B1 (de)
JP (1) JPH02189971A (de)
DE (1) DE68915251T2 (de)
ES (1) ES2052952T3 (de)
FR (1) FR2639784B1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10357135A1 (de) * 2003-12-06 2005-06-30 X-Fab Semiconductor Foundries Ag Fotodetektor mit Transimpendanzverstärker und Auswerteelektronik in monolithischer Integration und Herstellungsverfahren

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR930004764A (ko) * 1991-08-26 1993-03-23 윌리엄 이. 힐러 비냉각 촛점면 어레이
FR2691579A1 (fr) * 1992-05-21 1993-11-26 Commissariat Energie Atomique Système de conversion d'une image infrarouge en image visible ou proche infrarouge.
WO1993026050A1 (en) * 1992-06-11 1993-12-23 Honeywell Inc. Two-level microbridge bolometer imaging array and method of making same
US5409548A (en) * 1993-05-17 1995-04-25 The United States Of America As Represented By The Secretary Of The Army Ferroelectric detector array utilizing material and fabrication technique
FR2715250B1 (fr) * 1994-01-19 1996-04-05 Commissariat Energie Atomique Dispositif tridimensionnel de détection de rayonnement et procédé de fabrication de ce dispositif.
US5457318A (en) * 1994-04-29 1995-10-10 Texas Instruments Incorporated Thermal detector apparatus and method using reduced thermal capacity
KR0144651B1 (ko) * 1994-09-30 1998-08-17 이형도 초전형 적외선 센서
US6137107A (en) * 1996-08-30 2000-10-24 Raytheon Company Thermal detector with inter-digitated thin film electrodes and method
US5990481A (en) * 1996-08-30 1999-11-23 Raytheon Company Thermal detector with preferentially-ordered thermally sensitive element and method
US6087661A (en) * 1997-10-29 2000-07-11 Raytheon Company Thermal isolation of monolithic thermal detector
US6278117B1 (en) * 1999-03-04 2001-08-21 Qel, Inc. Solid state radiation detector with tissue equivalent response
DE10142531A1 (de) * 2001-08-30 2003-03-20 Philips Corp Intellectual Pty Sensoranordnung aus licht- und/oder röntgenstrahlungsempfindlichen Sensoren
US7049153B2 (en) * 2003-04-23 2006-05-23 Micron Technology, Inc. Polymer-based ferroelectric memory
JP4535367B2 (ja) * 2004-05-24 2010-09-01 ルネサスエレクトロニクス株式会社 集積回路装置
KR100667339B1 (ko) * 2005-01-11 2007-01-12 삼성전자주식회사 바이오 센서 및 그 시스템
FR3044408B1 (fr) * 2015-11-30 2019-06-14 Commissariat A L'energie Atomique Et Aux Energies Alternatives Capteur de motif thermique a capacite pyroelectrique horizontale
FR3090209B1 (fr) * 2018-12-18 2021-01-15 Commissariat Energie Atomique Procede de fabrication d’un dispositif comprenant un materiau acquerant une propriete electrique apres avoir ete soumis a une polarisation electrique

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3846820A (en) * 1973-06-26 1974-11-05 Westinghouse Electric Corp Mosaic for ir imaging using pyroelectric sensors in a bipolar transistor array
US3973146A (en) * 1974-03-18 1976-08-03 North American Philips Corporation Signal detector comprising field effect transistors
US4341012A (en) * 1980-09-29 1982-07-27 The United States Of America As Represented By The Administrator, National Aeronautics And Space Administration Pyroelectric detector arrays
JPS5879122A (ja) * 1981-11-05 1983-05-12 Kureha Chem Ind Co Ltd 焦電性赤外線検出器
GB2163596B (en) * 1984-08-24 1988-02-03 Philips Electronic Associated A thermal imaging device and a method of manufacturing a thermal imaging device
US4740700A (en) * 1986-09-02 1988-04-26 Hughes Aircraft Company Thermally insulative and electrically conductive interconnect and process for making same
US4769545A (en) * 1986-11-26 1988-09-06 American Iris Corporation Motion detector

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10357135A1 (de) * 2003-12-06 2005-06-30 X-Fab Semiconductor Foundries Ag Fotodetektor mit Transimpendanzverstärker und Auswerteelektronik in monolithischer Integration und Herstellungsverfahren
DE10357135B4 (de) * 2003-12-06 2007-01-04 X-Fab Semiconductor Foundries Ag Fotodetektor mit Transimpendanzverstärker und Auswerteelektronik in monolithischer Integration und Herstellungsverfahren

Also Published As

Publication number Publication date
JPH02189971A (ja) 1990-07-25
EP0371868B1 (de) 1994-05-11
DE68915251D1 (de) 1994-06-16
ES2052952T3 (es) 1994-07-16
EP0371868A1 (de) 1990-06-06
US5008541A (en) 1991-04-16
FR2639784B1 (fr) 1991-01-11
FR2639784A1 (fr) 1990-06-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee