DE68907504D1 - Stabilisierter generator fuer die lieferung einer schwellenspannung fuer einen mos-transistor. - Google Patents

Stabilisierter generator fuer die lieferung einer schwellenspannung fuer einen mos-transistor.

Info

Publication number
DE68907504D1
DE68907504D1 DE8989420084T DE68907504T DE68907504D1 DE 68907504 D1 DE68907504 D1 DE 68907504D1 DE 8989420084 T DE8989420084 T DE 8989420084T DE 68907504 T DE68907504 T DE 68907504T DE 68907504 D1 DE68907504 D1 DE 68907504D1
Authority
DE
Germany
Prior art keywords
delivery
threshold voltage
mos transistor
stabilized generator
stabilized
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8989420084T
Other languages
English (en)
Other versions
DE68907504T2 (de
Inventor
Antoine Pavlin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
SGS Thomson Microelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics SA filed Critical SGS Thomson Microelectronics SA
Application granted granted Critical
Publication of DE68907504D1 publication Critical patent/DE68907504D1/de
Publication of DE68907504T2 publication Critical patent/DE68907504T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02Regulating voltage or current
    • G05F3/08Regulating voltage or current wherein the variable is dc
    • G05F3/10Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02Regulating voltage or current
    • G05F3/08Regulating voltage or current wherein the variable is dc
    • G05F3/10Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/245Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Automation & Control Theory (AREA)
  • Manipulation Of Pulses (AREA)
  • Measurement Of Current Or Voltage (AREA)
  • Control Of Electrical Variables (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Logic Circuits (AREA)
DE89420084T 1988-03-09 1989-03-08 Stabilisierter Generator für die Lieferung einer Schwellenspannung für einen MOS-Transistor. Expired - Fee Related DE68907504T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8803751A FR2628547B1 (fr) 1988-03-09 1988-03-09 Generateur stabilise de fourniture de tension de seuil de transistor mos

Publications (2)

Publication Number Publication Date
DE68907504D1 true DE68907504D1 (de) 1993-08-19
DE68907504T2 DE68907504T2 (de) 1994-01-05

Family

ID=9364534

Family Applications (1)

Application Number Title Priority Date Filing Date
DE89420084T Expired - Fee Related DE68907504T2 (de) 1988-03-09 1989-03-08 Stabilisierter Generator für die Lieferung einer Schwellenspannung für einen MOS-Transistor.

Country Status (6)

Country Link
US (1) US4954728A (de)
EP (1) EP0332548B1 (de)
JP (1) JPH0210917A (de)
KR (1) KR890015102A (de)
DE (1) DE68907504T2 (de)
FR (1) FR2628547B1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2656174B1 (fr) * 1989-12-15 1995-03-17 Bull Sa Procede et dispositif de compensation de la derive en courant dans un circuit integre mos, et circuit integre en resultant.
JPH05315852A (ja) * 1992-05-12 1993-11-26 Fuji Electric Co Ltd 電流制限回路および電流制限回路用定電圧源
TWI668950B (zh) * 2018-04-10 2019-08-11 杰力科技股份有限公司 電壓轉換電路及其控制電路

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3546481A (en) * 1967-10-18 1970-12-08 Texas Instruments Inc Threshold circuit for comparing variable amplitude voltages
CH657712A5 (de) * 1978-03-08 1986-09-15 Hitachi Ltd Referenzspannungserzeuger.
US4553098A (en) * 1978-04-05 1985-11-12 Hitachi, Ltd. Battery checker
US4342004A (en) * 1979-05-15 1982-07-27 Tokyo Shibaura Denki Kabushiki Kaisha Voltage comparator circuit
US4427903A (en) * 1980-06-24 1984-01-24 Nippon Electric Co., Ltd. Voltage current converter circuit
JPS58221521A (ja) * 1982-06-18 1983-12-23 Toshiba Corp 基準電位発生回路およびこれを用いた入力回路
US4563595A (en) * 1983-10-27 1986-01-07 National Semiconductor Corporation CMOS Schmitt trigger circuit for TTL logic levels
US4584492A (en) * 1984-08-06 1986-04-22 Intel Corporation Temperature and process stable MOS input buffer
JPS61224192A (ja) * 1985-03-29 1986-10-04 Sony Corp 読出し増幅器

Also Published As

Publication number Publication date
EP0332548A1 (de) 1989-09-13
KR890015102A (ko) 1989-10-28
JPH0210917A (ja) 1990-01-16
EP0332548B1 (de) 1993-07-14
US4954728A (en) 1990-09-04
DE68907504T2 (de) 1994-01-05
FR2628547A1 (fr) 1989-09-15
FR2628547B1 (fr) 1990-12-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee