DE68904820D1 - Apparat zum messen einer musterkonfiguration. - Google Patents

Apparat zum messen einer musterkonfiguration.

Info

Publication number
DE68904820D1
DE68904820D1 DE8989110372T DE68904820T DE68904820D1 DE 68904820 D1 DE68904820 D1 DE 68904820D1 DE 8989110372 T DE8989110372 T DE 8989110372T DE 68904820 T DE68904820 T DE 68904820T DE 68904820 D1 DE68904820 D1 DE 68904820D1
Authority
DE
Germany
Prior art keywords
measuring
pattern configuration
pattern
configuration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8989110372T
Other languages
English (en)
Other versions
DE68904820T2 (de
Inventor
Fumio Komatsu
Motosuke Miyoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE68904820D1 publication Critical patent/DE68904820D1/de
Publication of DE68904820T2 publication Critical patent/DE68904820T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/02—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
    • G01B15/04—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring contours or curvatures

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
  • Electron Sources, Ion Sources (AREA)
DE8989110372T 1988-06-08 1989-06-08 Apparat zum messen einer musterkonfiguration. Expired - Fee Related DE68904820T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63140775A JPH01311551A (ja) 1988-06-08 1988-06-08 パターン形状測定装置

Publications (2)

Publication Number Publication Date
DE68904820D1 true DE68904820D1 (de) 1993-03-25
DE68904820T2 DE68904820T2 (de) 1993-07-22

Family

ID=15276461

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8989110372T Expired - Fee Related DE68904820T2 (de) 1988-06-08 1989-06-08 Apparat zum messen einer musterkonfiguration.

Country Status (5)

Country Link
US (1) US5029250A (de)
EP (1) EP0345772B1 (de)
JP (1) JPH01311551A (de)
KR (1) KR920007629B1 (de)
DE (1) DE68904820T2 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07111336B2 (ja) * 1990-02-07 1995-11-29 株式会社東芝 パターン寸法測定方法及び装置
JPH07111335B2 (ja) * 1990-02-07 1995-11-29 株式会社東芝 パターン形状測定方法及び装置
JP2802571B2 (ja) * 1993-03-23 1998-09-24 株式会社日立製作所 電子線測長装置
US5576542A (en) * 1993-12-08 1996-11-19 Kabushiki Kaisha Toshiba Substrate cross-section observing apparatus
EP0720216B1 (de) * 1994-12-29 2001-10-17 AT&T Corp. Linienbreitenmessung an integrierten Schaltungsstrukturen
US5958799A (en) * 1995-04-13 1999-09-28 North Carolina State University Method for water vapor enhanced charged-particle-beam machining
US5798529A (en) * 1996-05-28 1998-08-25 International Business Machines Corporation Focused ion beam metrology
US5734164A (en) * 1996-11-26 1998-03-31 Amray, Inc. Charged particle apparatus having a canted column
US6157032A (en) * 1998-11-04 2000-12-05 Schlumberger Technologies, Inc. Sample shape determination by measurement of surface slope with a scanning electron microscope
JP2000162286A (ja) * 1998-12-01 2000-06-16 Advantest Corp 電子ビームテスタ及び画像処理装置
JP3916464B2 (ja) * 1999-12-14 2007-05-16 アプライド マテリアルズ インコーポレイテッド 試料検査のための方法
US6559446B1 (en) * 2000-06-21 2003-05-06 Advanced Micro Devices, Inc. System and method for measuring dimensions of a feature having a re-entrant profile
US6566655B1 (en) 2000-10-24 2003-05-20 Advanced Micro Devices, Inc. Multi-beam SEM for sidewall imaging
US6852974B2 (en) * 2001-03-06 2005-02-08 Topcon Corporation Electron beam device and method for stereoscopic measurements
JP4215454B2 (ja) * 2001-07-12 2009-01-28 株式会社日立製作所 試料の凹凸判定方法、及び荷電粒子線装置
US7361894B2 (en) * 2002-10-22 2008-04-22 Hitachi High-Technologies Corporation Method of forming a sample image and charged particle beam apparatus
JP4065847B2 (ja) * 2001-11-21 2008-03-26 株式会社日立ハイテクノロジーズ 試料像形成方法及び荷電粒子線装置
WO2003044821A1 (fr) * 2001-11-21 2003-05-30 Hitachi High-Technologies Corporation Procede d'imagerie d'echantillon et systeme de faisceau de particules chargees
US6670612B1 (en) * 2002-07-01 2003-12-30 Kla-Tencor Technologies Corporation Undercut measurement using SEM
WO2004008255A2 (en) * 2002-07-11 2004-01-22 Applied Materials, Inc. Method and apparatus for measuring critical dimensions with a particle beam
JP2004071486A (ja) * 2002-08-09 2004-03-04 Seiko Instruments Inc 集束荷電粒子ビーム装置
US7528614B2 (en) 2004-12-22 2009-05-05 Applied Materials, Inc. Apparatus and method for voltage contrast analysis of a wafer using a tilted pre-charging beam
DE102004004597B4 (de) * 2004-01-29 2008-08-07 Qimonda Ag Verfahren zur Vermessung einer Struktur auf einem Halbleiterwafer mit einem Rasterelektronenmikroskop
DE102004021442A1 (de) * 2004-04-28 2005-11-24 Infineon Technologies Ag Verfahren zum messtechnischen Charakterisieren einer Struktur
JP5531721B2 (ja) * 2010-03-30 2014-06-25 富士通株式会社 ピン配置決定プログラム、ピン配置決定装置及びピン配置決定方法
KR20170041986A (ko) * 2015-10-08 2017-04-18 삼성전자주식회사 반도체 소자 측정 장치
JP7120873B2 (ja) * 2018-10-09 2022-08-17 株式会社日立製作所 計測装置及び試料の表面の計測方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59112217A (ja) * 1982-11-29 1984-06-28 Toshiba Corp 寸法測定方法
JPS6161002A (ja) * 1984-09-03 1986-03-28 Hitachi Ltd 断面形状自動測定方式

Also Published As

Publication number Publication date
EP0345772B1 (de) 1993-02-10
DE68904820T2 (de) 1993-07-22
US5029250A (en) 1991-07-02
JPH01311551A (ja) 1989-12-15
KR900000683A (ko) 1990-01-31
KR920007629B1 (ko) 1992-09-09
EP0345772A2 (de) 1989-12-13
JPH0555802B2 (de) 1993-08-18
EP0345772A3 (en) 1990-06-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee