DE68904390T2 - Methode zur untersuchung der verbindung von halbleiterplaettchen. - Google Patents

Methode zur untersuchung der verbindung von halbleiterplaettchen.

Info

Publication number
DE68904390T2
DE68904390T2 DE8989118387T DE68904390T DE68904390T2 DE 68904390 T2 DE68904390 T2 DE 68904390T2 DE 8989118387 T DE8989118387 T DE 8989118387T DE 68904390 T DE68904390 T DE 68904390T DE 68904390 T2 DE68904390 T2 DE 68904390T2
Authority
DE
Germany
Prior art keywords
examining
connection
semiconductor devices
semiconductor
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8989118387T
Other languages
English (en)
Other versions
DE68904390D1 (de
Inventor
Masami Nakano
Takao Abe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Application granted granted Critical
Publication of DE68904390D1 publication Critical patent/DE68904390D1/de
Publication of DE68904390T2 publication Critical patent/DE68904390T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/02—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material
    • G01N23/06—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and measuring the absorption
    • G01N23/18—Investigating the presence of flaws defects or foreign matter

Landscapes

  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Biochemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Recrystallisation Techniques (AREA)
DE8989118387T 1988-10-14 1989-10-04 Methode zur untersuchung der verbindung von halbleiterplaettchen. Expired - Lifetime DE68904390T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63260326A JPH0691147B2 (ja) 1988-10-14 1988-10-14 接合ウエーハ検査方法

Publications (2)

Publication Number Publication Date
DE68904390D1 DE68904390D1 (de) 1993-02-25
DE68904390T2 true DE68904390T2 (de) 1993-08-19

Family

ID=17346454

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8989118387T Expired - Lifetime DE68904390T2 (de) 1988-10-14 1989-10-04 Methode zur untersuchung der verbindung von halbleiterplaettchen.

Country Status (4)

Country Link
US (1) US5007071A (de)
EP (1) EP0364814B1 (de)
JP (1) JPH0691147B2 (de)
DE (1) DE68904390T2 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0346314A (ja) * 1989-07-14 1991-02-27 Sumitomo Metal Mining Co Ltd 半導体基板の接合時又は研磨時前の処理方法
JPH05275508A (ja) * 1992-03-27 1993-10-22 Mitsubishi Materials Corp 貼合せ半導体ウェーハの接合界面の評価方法
JPH05275507A (ja) * 1992-03-27 1993-10-22 Mitsubishi Materials Corp 貼合せ半導体ウェーハの接合界面の評価方法
WO1996013060A1 (de) * 1994-10-24 1996-05-02 Daimler-Benz Aktiengesellschaft Verfahren zum direkten verbinden von planaren körpern und nach dem verfahren aus planaren körpern hergestellte gegenstände
US6984571B1 (en) 1999-10-01 2006-01-10 Ziptronix, Inc. Three dimensional device integration method and integrated device
US6902987B1 (en) 2000-02-16 2005-06-07 Ziptronix, Inc. Method for low temperature bonding and bonded structure
JP2005503671A (ja) * 2001-09-18 2005-02-03 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ Ｘ線を用いて半導体材料のウェハを検査する方法
US7109092B2 (en) 2003-05-19 2006-09-19 Ziptronix, Inc. Method of room temperature covalent bonding
FR2877091B1 (fr) * 2004-10-26 2006-12-29 Commissariat Energie Atomique Procede et dispositif de mesure de l'energie d'adhesion
JP2008060355A (ja) * 2006-08-31 2008-03-13 Sumco Corp 貼り合わせウェーハの製造方法および貼り合わせウェーハ
JP5555995B2 (ja) * 2008-09-12 2014-07-23 株式会社Ｓｕｍｃｏ 貼り合わせシリコンウェーハの製造方法
JP2011205074A (ja) 2010-03-03 2011-10-13 Toshiba Corp 半導体製造装置
JP2015228449A (ja) * 2014-06-02 2015-12-17 株式会社ニコン 基板接合方法および基板接合装置
US10373830B2 (en) * 2016-03-08 2019-08-06 Ostendo Technologies, Inc. Apparatus and methods to remove unbonded areas within bonded substrates using localized electromagnetic wave annealing

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3609356A (en) * 1968-12-16 1971-09-28 Ibm Feedback controlled scanning microscopy apparatus for x-ray diffraction topography
US3944823A (en) * 1970-03-16 1976-03-16 Nippon Hoso Kyokai X-Ray topograph reproducing apparatus
US4078175A (en) * 1976-09-20 1978-03-07 Nasa Apparatus for use in examining the lattice of a semiconductor wafer by X-ray diffraction
JPH0831403B2 (ja) * 1983-12-06 1996-03-27 株式会社東芝 シリコン結晶体の接合方法
JPH061790B2 (ja) * 1985-02-08 1994-01-05 株式会社東芝 半導体基板の接着装置

Also Published As

Publication number Publication date
EP0364814A1 (de) 1990-04-25
EP0364814B1 (de) 1993-01-13
DE68904390D1 (de) 1993-02-25
JPH02106052A (ja) 1990-04-18
US5007071A (en) 1991-04-09
JPH0691147B2 (ja) 1994-11-14

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee