DE648441C - Process for the manufacture of semiconductor resistor masses - Google Patents

Process for the manufacture of semiconductor resistor masses

Info

Publication number
DE648441C
DE648441C DEST52438D DEST052438D DE648441C DE 648441 C DE648441 C DE 648441C DE ST52438 D DEST52438 D DE ST52438D DE ST052438 D DEST052438 D DE ST052438D DE 648441 C DE648441 C DE 648441C
Authority
DE
Germany
Prior art keywords
masses
synthetic resin
semiconductor resistor
manufacture
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DEST52438D
Other languages
German (de)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Steatit Magnesia AG
Original Assignee
Steatit Magnesia AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Steatit Magnesia AG filed Critical Steatit Magnesia AG
Priority to DEST52438D priority Critical patent/DE648441C/en
Application granted granted Critical
Publication of DE648441C publication Critical patent/DE648441C/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C17/00Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/065Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
    • H01C17/06506Precursor compositions therefor, e.g. pastes, inks, glass frits
    • H01C17/06573Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the permanent binder
    • H01C17/06586Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the permanent binder composed of organic material

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Adjustable Resistors (AREA)

Description

Verfahren zur Herstellung von Halbleiterwiderstandsmassen Die Erfindung bezieht sich auf ein Verfahren zur Herstellung von Halbleiterwiderstandsmassen, die außer Halbleiterstoffen nur Kunstharz ohne Zusatz von Faserstoffen enthalten und bei welchen die Kunstbarzbestandteile durch Anwendung von Druck oder Wärme in einen harten polymerisierten Stoff inngewandelt werden. Die bekannten Widerstandsmassen dieser Art zeigen bei mil:noskopischer Betrachtung dieser Massen Poren und Risse, die wahrscheinlich bei der Härtung entstehen. Ihre Anwendungsmöglichkeit ist daher beschränkt. Es hat sich beispielsweise gezeigt, daß sich die Leitfähigkeit der Widerstandsmassen bei' Feuchtigkeitsaufnahme, die durch die Poren und Risse stark begünstigt wird, in gewissem Umfange ändert. Wenn auch diese Änderungen häufig ohne Schaden hingepornmen werden können, so kommen doch Fälle vor, in denen feuehtigkeitsbüständige Widerstandsmassen notwendig sind.Method of Making Semiconductor Resistor Compounds The invention relates to a process for the production of semiconductor resistor masses, which, apart from semiconductors, only contain synthetic resin without the addition of fibers and in which the synthetic resin components by the application of pressure or heat in a hard polymerized substance can be converted. The known resistance masses of this kind show pores and cracks on mil: noscopic observation of these masses, which are likely to arise during hardening. Its possible application is therefore limited. It has been shown, for example, that the conductivity of the resistance masses with 'moisture absorption, which is strongly promoted by the pores and cracks, changes to some extent. Even if these changes are often promoted without harm However, there are cases in which fire-relieved resistance masses occur are necessary.

Es ist bereits bekannt, Halbleiterwid erstandsmassen dadurch elastischer auszugestalten, daß man den Widerstandsmassen Faserstoffe beimengte oder aber die Widerstandsmassen in Tragkörper aus Faserstoff einlagerte. Diese bekannten Maßnahmen sind wieder aufgegeben worden, da es nicht möglich war, eine gleichmäßige Verteilung der Faserstoffe innerhalb der Widerstandsmassen zu erreichen, so daß die Widerstände bei der Herstellung großen Schwankungen unterworfen waren.It is already known that the first semiconductor resistor masses are more elastic to design that one admixed fiber materials or else the resistance masses Resistance masses embedded in support bodies made of fiber material. These known measures have been abandoned again because it was not possible to achieve an even distribution to achieve the fibrous materials within the resistance masses, so that the resistances were subject to great fluctuations in manufacture.

Durch die Erfindung werden Halbleiter-Z> geschaffen, welche ohne Zusatz von Faserstoffen ausreichende elastische Eigenschaften haben, so daß sie nach dem Härten poren- und rißfrei sind. und dadurch auch feuchtigkeitsbeständig. Die Erfindung besteht darin, daß den die Halbleiterstoffe in feinster Verteilung enthaltenden Kunstharzlösungen vor dem Härten Weichmachungsmittel, z. B. Trikresylphosphat, bei gemengt werden.The invention creates semiconductor Z>, which without addition of fibrous materials have sufficient elastic properties so that they can after Hardening are free of pores and cracks. and therefore also moisture-resistant. The invention consists in the fact that the semiconductors containing the finest distribution Synthetic resin solutions before curing plasticizers, e.g. B. tricresyl phosphate be mixed.

Als Weiclmiachungsmittel kommen außer dem ,oben beispi,elswieise@ genannten Stoffe von hohem Molekulargewicht in Frage. Sie Stoffe müssen nur folgende Eigenschaften haben: sie müssen verträglich mit den übrigen Lösungsmitteln, chemisch neutral, feuchtigkeitsbeständig, wasserunlöslich und schwer flüchtig sein.In addition to the above, elswieise @ mentioned substances of high molecular weight in question. You just need the following substances Have properties: they must be compatible with the other solvents, chemically neutral, moisture-resistant, insoluble in water and not very volatile.

Bei den nach dem er$ndungsgemäßen Verfahren hergestellten Halbleiterwiderstandsrnassen treten nachträgliche Widerstandsänderungen nicht mehr auf. Die Weichmachungsmittel haben ferner zur Folge, daß die Halbleiterwiderstandsschichten die im Betrieb unvermeidlichen Wärmedehnungen anstandslos aufnehmen. Es hat sich ferner gezeigt, daß die Beimengung von Weichmachungsmitteln die Leitfähigkeit der auf Kunstharzbasis aufgebauten Halbleiterwiderstandsmassen derart erhöht, daß man nunmehr Halbleiterwiderstände mit geringem Ohmwert -herzustellen vermag. Auch das Rauschen der auf Kunstharzbasis aufgebauten Widerstandsmassen, das wahrscheinlich infolge von Molekularschwingungen- auftritt, wird durch die Beimengungvon Weichmachungsmitteln verringert, ein Umstand, der insbesondere bei Halbleiterwiderständen in Schwachstromgeräten aller Art von großer Bedeutung ist. Endlich wird die Brennbarkeit der Widerstandsmassen bei Zusatz von geeigneten Weichmachungsmitteln stark herabgesetzt, was im Falle eines Kurzschlusses oder einer Überbelastung von großer Wichtigkeit ist.In the case of the semiconductor resistor masses produced by the method according to the invention subsequent changes in resistance no longer occur. The plasticizers also have the consequence that the semiconductor resistance layers are the unavoidable in operation Absorb thermal expansion without any problems. It has also been shown that the admixture of plasticizers, the conductivity of the synthetic resin-based semiconductor resistance masses so increased that one can now produce semiconductor resistors with a low ohmic value able. Also the noise of the resin-based resistor masses, which probably occurs as a result of molecular vibrations, is caused by the admixture of Plasticizers reduced, a fact that is particularly common with semiconductor resistors in low-voltage devices of all kinds is of great importance. Finally the flammability of the resistance masses greatly reduced with the addition of suitable plasticizers, which in the case of short circuit or overload is of great importance.

Die Zugabe von Weichmachungsmitteln bei Kunstharzmassen ist an sich bekannt. Die Anwendung dieser Maßnahme auf Halbleiterwiderstandsmassen ist jedoch neu und erbringt wesentliche, oben im einzelnen angeführte Vorteile.The addition of plasticizers to synthetic resin compounds is inherent known. However, the application of this measure to semiconductor resistor masses is new and provides essential advantages detailed above.

Claims (1)

PATI:NTANSPRUCII . Verfahren zur Herstellung von Halb. leiterwiderstandsmassen, die außer den Halbleiterstoffen nur Kunstharz ohne Zusatz von Faserstoffen enthalten und bei welchen die Kunstharzbestwtdteile durch Anwendung von Druck oder Wärme in einen harten polymerisierten Stoff umgewandelt werden, dadurch gekennzeichnet, daß den die Halbleiterstoffe infeinster Verteilung enthaltenden Kunstharzlösungen vor dem Härten Weichmachungsmittel, z. B: Trikresylphosphat, beigemengt werden.PATI: NTANSPRUCII. Method of making half. conductor resistance masses, which, apart from the semiconductor materials, only contain synthetic resin without the addition of fibers and in which the synthetic resin components by the application of pressure or heat in converted into a hard polymerized substance, characterized in that the synthetic resin solutions containing the finest distribution of semiconductor materials hardening plasticizers, e.g. B: tricresyl phosphate.
DEST52438D 1934-07-27 1934-07-27 Process for the manufacture of semiconductor resistor masses Expired DE648441C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DEST52438D DE648441C (en) 1934-07-27 1934-07-27 Process for the manufacture of semiconductor resistor masses

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEST52438D DE648441C (en) 1934-07-27 1934-07-27 Process for the manufacture of semiconductor resistor masses

Publications (1)

Publication Number Publication Date
DE648441C true DE648441C (en) 1937-07-31

Family

ID=7466513

Family Applications (1)

Application Number Title Priority Date Filing Date
DEST52438D Expired DE648441C (en) 1934-07-27 1934-07-27 Process for the manufacture of semiconductor resistor masses

Country Status (1)

Country Link
DE (1) DE648441C (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2740808A1 (en) * 1976-09-13 1978-03-16 Gen Electric METAL OXYD VARISTOR

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2740808A1 (en) * 1976-09-13 1978-03-16 Gen Electric METAL OXYD VARISTOR

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