DE626304C - Process for the production of dry rectifier layers - Google Patents
Process for the production of dry rectifier layersInfo
- Publication number
- DE626304C DE626304C DEM120955D DEM0120955D DE626304C DE 626304 C DE626304 C DE 626304C DE M120955 D DEM120955 D DE M120955D DE M0120955 D DEM0120955 D DE M0120955D DE 626304 C DE626304 C DE 626304C
- Authority
- DE
- Germany
- Prior art keywords
- production
- dry rectifier
- layers
- dry
- copper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title claims description 14
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 239000003792 electrolyte Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- -1 Nirosta Chemical compound 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical group [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- UIFOTCALDQIDTI-UHFFFAOYSA-N arsanylidynenickel Chemical compound [As]#[Ni] UIFOTCALDQIDTI-UHFFFAOYSA-N 0.000 description 1
- ZCCIPPOKBCJFDN-UHFFFAOYSA-N calcium nitrate Chemical compound [Ca+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O ZCCIPPOKBCJFDN-UHFFFAOYSA-N 0.000 description 1
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Inorganic materials [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 description 1
- 235000010333 potassium nitrate Nutrition 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/16—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02614—Transformation of metal, e.g. oxidation, nitridation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
Description
Die Herstellung von Trockengleichrichterplatten ist mit erheblichen Schwierigkeiten verknüpft, da die wirksame Fläche möglichst dünn aber gleichmäßig sein soll. Bekannt sind Verfahren, bei welchen die beispielsweise aus Kupfer verwendeten Platten thermisch oxydiert und dann auf der Oberfläche reduziert werden.The manufacture of dry rectifier plates presents considerable difficulties linked, since the effective area should be as thin as possible but evenly. Known are processes in which the plates used, for example, made of copper, are thermally oxidized and then reduced on the surface.
Diesem Verfahren gegenüber hat das neue Verfahren den Vorzug, daß die Formierung bei erheblich niedriger Temperatur erfolgt und daß der Formierungsprozeß sehr schnei] abläuft.Compared to this process, the new process has the advantage that the formation takes place at a considerably lower temperature and that the formation process is very fast expires.
Es sind auch Formierungsverfahren bekanntgeworden, bei welchen die Herstellung der gleichrichtenden Schicht auch wie bei dem nachbeschriebenen neuen Verfahren in einem Elektrolyten erfolgt. Zu diesem Zwecke wurden in Wasser gelöste Elektrolytbäder benutzt. Die Herstellung von Trockengleic'hrichterschichten mit solchen Bädern läßt sich jedoch nur bei Elementen der Antimongruppe durchführen. Zur Herstellung von Gleichrichtersichichten bei Kupfer und ähnlichen Metallen versagen diese Verfahren.Forming processes have also become known in which the production the rectifying layer as well as in the new method described later in an electrolyte takes place. Electrolyte baths dissolved in water were used for this purpose. The production of dry leveling layers However, such baths can only be carried out with elements of the antimony group. For the production of rectifier layers These processes fail with copper and similar metals.
Das erfindungsgemäße Verfahren wendet eine neue Methode an, mit welchem die Gleichmäßigkeit durch eine elektrische Formierung erzielt wird. Erfindungsgemäß wird zu diesem Zweck die herzustellende Gleichrichterplatte in einen geschmolzenen, sauerstoffabgebenden Elektrolyten gebracht, welcher stark sauerstoffhaltig ist. Gleichzeitig wird die Platte an eine Gleich- oder Wechselspannungsquelle gelegt, so daß mit Hilfe einer zweiten Platte ein Strom durch, die zu formierende Platte und den Elektrolyten hindurchgeht. Mit diesem Verfahren ist es möglich, beliebig starke Oxydationsformen der zu formierenden Plattenoberfläche zu erzielen. Durch, die Verwendung des elektrischen Stromes bei der Herstellung wird automatisch eine elektrisch, gleichwertige Oberfläche erzielt, da die schwächer oxydierten Stellen eine bessere Leitfähigkeit haben als die stärker oxydierten. Mit Hilfe des Verfahrens wird eine bestimmte Wachstumrichtung der Oxyd teile erzielt.The inventive method uses a new method with which the Uniformity is achieved through electrical formation. According to the invention for this purpose, the rectifier plate to be produced is transferred to a molten, oxygen-releasing one Brought electrolytes, which is highly oxygenated. At the same time, the plate is connected to a DC or AC voltage source placed so that with the help of a second plate a current flows through the to be formed Plate and the electrolyte passes through it. With this process it is possible to produce any strong forms of oxidation to achieve forming plate surface. By using the electric current an electrical, equivalent surface is automatically achieved during production, because the less oxidized areas have a better conductivity than the stronger ones oxidized. With the help of the process, the oxide grows in a certain direction parts achieved.
Beispielsweise läßt sich Kupfer in geschmolzenen Salpeter in sehr kurzer Zeit ohne Schwierigkeiten formieren. Das Verfahren ist jedoch, nicht auf Kupfer beschränkt, es lassen sich, auch andere schwerer oxydierbare Metalle (wie Nickel, Eisen, Nickeleisen, Chromeisen, Nirosta, Nickelin, Kanstantan usw.) mit Leichtigkeit danach behandeln.For example, copper can be converted into molten saltpeter in a very short time form without difficulty. The procedure is, however, not limited to copper, other metals that are more difficult to oxidize (such as nickel, iron, nickel iron, Chrome iron, Nirosta, Nickelin, Kanstantan etc.) with ease afterwards.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEM120955D DE626304C (en) | 1932-09-06 | 1932-09-07 | Process for the production of dry rectifier layers |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEM0120955 | 1932-09-06 | ||
| DEM120955D DE626304C (en) | 1932-09-06 | 1932-09-07 | Process for the production of dry rectifier layers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE626304C true DE626304C (en) | 1936-02-24 |
Family
ID=25988403
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEM120955D Expired DE626304C (en) | 1932-09-06 | 1932-09-07 | Process for the production of dry rectifier layers |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE626304C (en) |
-
1932
- 1932-09-07 DE DEM120955D patent/DE626304C/en not_active Expired
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