DE60333632D1 - Hochenergie-Topemitter-VCSEL - Google Patents

Hochenergie-Topemitter-VCSEL

Info

Publication number
DE60333632D1
DE60333632D1 DE60333632T DE60333632T DE60333632D1 DE 60333632 D1 DE60333632 D1 DE 60333632D1 DE 60333632 T DE60333632 T DE 60333632T DE 60333632 T DE60333632 T DE 60333632T DE 60333632 D1 DE60333632 D1 DE 60333632D1
Authority
DE
Germany
Prior art keywords
power density
vcsel
pitch
less
elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60333632T
Other languages
English (en)
Inventor
Hans-Peter Gauggel
Paul Royo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Avalon Photonics AG
Original Assignee
Avalon Photonics AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Avalon Photonics AG filed Critical Avalon Photonics AG
Application granted granted Critical
Publication of DE60333632D1 publication Critical patent/DE60333632D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H01S5/2063—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Bipolar Transistors (AREA)
DE60333632T 2003-09-01 2003-09-01 Hochenergie-Topemitter-VCSEL Expired - Lifetime DE60333632D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP03019870A EP1511138B1 (de) 2003-09-01 2003-09-01 Hochenergie-Topemitter-VCSEL

Publications (1)

Publication Number Publication Date
DE60333632D1 true DE60333632D1 (de) 2010-09-16

Family

ID=34089658

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60333632T Expired - Lifetime DE60333632D1 (de) 2003-09-01 2003-09-01 Hochenergie-Topemitter-VCSEL

Country Status (5)

Country Link
US (2) US20070091960A1 (de)
EP (1) EP1511138B1 (de)
AT (1) ATE476772T1 (de)
DE (1) DE60333632D1 (de)
WO (1) WO2005022712A1 (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010043058A1 (de) * 2010-10-28 2012-05-03 Robert Bosch Gmbh Laserzündkerze und Betriebsverfahren hierfür
BR112013022631A2 (pt) 2011-03-09 2016-12-06 Koninkl Philips Nv matriz de vcsel
US8644712B2 (en) 2011-06-23 2014-02-04 Avago Technologies General Ip (Singapore) Pte. Ltd. Opto-electronic transceiver module with housing having thermally conductive protrusion
DE102011085344B4 (de) * 2011-10-27 2022-12-01 Robert Bosch Gmbh Laserlichtquelle
US9038883B2 (en) 2013-09-11 2015-05-26 Princeton Optronics Inc. VCSEL packaging
US9462253B2 (en) * 2013-09-23 2016-10-04 Microsoft Technology Licensing, Llc Optical modules that reduce speckle contrast and diffraction artifacts
CN103730833B (zh) * 2014-01-06 2017-05-31 海特光电有限责任公司 一种二维垂直腔面发射的激光器列阵
US9553423B2 (en) 2015-02-27 2017-01-24 Princeton Optronics Inc. Miniature structured light illuminator
US10630053B2 (en) 2015-07-30 2020-04-21 Optipulse Inc. High power laser grid structure
US10153615B2 (en) * 2015-07-30 2018-12-11 Optipulse, Inc. Rigid high power and high speed lasing grid structures
US9742153B1 (en) 2016-02-23 2017-08-22 Lumentum Operations Llc Compact emitter design for a vertical-cavity surface-emitting laser
US10761195B2 (en) 2016-04-22 2020-09-01 OPSYS Tech Ltd. Multi-wavelength LIDAR system
US10250012B2 (en) 2016-06-02 2019-04-02 Lumentum Operations Llc Variable emission area design for a vertical-cavity surface-emitting laser array
CN110402398B (zh) * 2017-03-13 2023-12-01 欧普赛斯技术有限公司 眼睛安全的扫描激光雷达系统
KR102218679B1 (ko) 2017-07-28 2021-02-23 옵시스 테크 엘티디 작은 각도 발산을 갖는 vcsel 어레이 lidar 송신기
WO2019033111A1 (en) 2017-08-11 2019-02-14 Optipulse Inc. LASER GRID STRUCTURES FOR HIGH-SPEED WIRELESS DATA TRANSFERS
US10374705B2 (en) 2017-09-06 2019-08-06 Optipulse Inc. Method and apparatus for alignment of a line-of-sight communications link
US10355456B2 (en) 2017-09-26 2019-07-16 Lumentum Operations Llc Emitter array with variable spacing between adjacent emitters
KR102425083B1 (ko) * 2017-10-19 2022-07-27 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체소자, 반도체소자 패키지 및 자동 초점 장치
CN111356934B (zh) 2017-11-15 2024-03-12 欧普赛斯技术有限公司 噪声自适应固态lidar系统
WO2019164755A1 (en) 2018-02-20 2019-08-29 Ii-Vi Delaware, Inc. Tailoring of high power vcsel arrays
WO2019195054A1 (en) 2018-04-01 2019-10-10 OPSYS Tech Ltd. Noise adaptive solid-state lidar system
KR102171733B1 (ko) * 2018-04-02 2020-10-29 주식회사 레이아이알 수직 공동 표면 방출 레이저
CN113692540A (zh) 2019-04-09 2021-11-23 欧普赛斯技术有限公司 带激光控制的固态lidar发送器
US11846728B2 (en) 2019-05-30 2023-12-19 OPSYS Tech Ltd. Eye-safe long-range LIDAR system using actuator
KR102637658B1 (ko) 2019-06-10 2024-02-20 옵시스 테크 엘티디 눈-안전 장거리 고체 상태 lidar 시스템

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5625636A (en) * 1991-10-11 1997-04-29 Bryan; Robert P. Integration of photoactive and electroactive components with vertical cavity surface emitting lasers
US5325386A (en) * 1992-04-21 1994-06-28 Bandgap Technology Corporation Vertical-cavity surface emitting laser assay display system
DE4490251D2 (de) * 1993-01-22 1997-07-31 Deutsche Forsch Luft Raumfahrt Phasengesteuertes fraktales Lasersystem
US5446754A (en) * 1993-11-05 1995-08-29 Photonics Research Incorporated Phased array semiconductor laser
US5574738A (en) * 1995-06-07 1996-11-12 Honeywell Inc. Multi-gigahertz frequency-modulated vertical-cavity surface emitting laser
JP3279464B2 (ja) * 1995-11-08 2002-04-30 富士ゼロックス株式会社 二次元面発光レーザアレイ、およびその駆動方法および駆動装置
US5719891A (en) * 1995-12-18 1998-02-17 Picolight Incorporated Conductive element with lateral oxidation barrier
JPH11168262A (ja) * 1997-09-30 1999-06-22 Canon Inc 面型光デバイス、その製造方法、および表示装置

Also Published As

Publication number Publication date
US20100035372A1 (en) 2010-02-11
EP1511138A1 (de) 2005-03-02
US20070091960A1 (en) 2007-04-26
WO2005022712A1 (en) 2005-03-10
ATE476772T1 (de) 2010-08-15
US8247252B2 (en) 2012-08-21
EP1511138B1 (de) 2010-08-04

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