WO2003026355A3 - Elektrolumineszierender körper - Google Patents

Elektrolumineszierender körper Download PDF

Info

Publication number
WO2003026355A3
WO2003026355A3 PCT/DE2002/003200 DE0203200W WO03026355A3 WO 2003026355 A3 WO2003026355 A3 WO 2003026355A3 DE 0203200 W DE0203200 W DE 0203200W WO 03026355 A3 WO03026355 A3 WO 03026355A3
Authority
WO
WIPO (PCT)
Prior art keywords
radiation
decoupling elements
radiation decoupling
elements
width
Prior art date
Application number
PCT/DE2002/003200
Other languages
English (en)
French (fr)
Other versions
WO2003026355A2 (de
Inventor
Norbert Linder
Ernst Nirschl
Werner Spaeth
Original Assignee
Osram Opto Semiconductors Gmbh
Norbert Linder
Ernst Nirschl
Werner Spaeth
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE2001142541 external-priority patent/DE10142541B9/de
Priority claimed from DE20119230U external-priority patent/DE20119230U1/de
Application filed by Osram Opto Semiconductors Gmbh, Norbert Linder, Ernst Nirschl, Werner Spaeth filed Critical Osram Opto Semiconductors Gmbh
Priority to US10/488,487 priority Critical patent/US7135711B2/en
Priority to JP2003529816A priority patent/JP2005503043A/ja
Publication of WO2003026355A2 publication Critical patent/WO2003026355A2/de
Publication of WO2003026355A3 publication Critical patent/WO2003026355A3/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)

Abstract

Es wird ein elektrolumineszierendes Bauelement (1), insbesondere ein LED-Chip, vorgeschlagen, der bei einfachem Aufbau einen hohen externen Wirkungsgrad aufweist. Das elektrolumineszierende Bauelement (1) weist ein Substrat (2); mehrere, nebeneinander auf dem Substrat (2) in Abstand angeordnete Strahlungsauskoppelelemente mit einem aktiven Schichtstapel (7) mit einer Emissionszone (8); und ein Kontaktelement (9) auf jedem Strahlungsauskoppelelement (4) auf. Erfindungsgemäß sind die Kontaktelemente (9), deren Breite (b') kleiner als die Breite (b) der Strahlungsauskoppelelemente (4) bemessen ist, mittig auf den Strahlungsauskoppelelementen (4) angeordnet, und die Breite (b) der Strahlungsauskoppelelemente (4) ist bei gegebener Höhe (h) derart klein gewählt, dass ein wesentlicher Anteil des seitlich von der Emissionszone (8) abgestrahlten Lichts (11) direkt durch die Seitenflächen (12) der Strahlungsauskoppelelemente (4) ausgekoppelt werden kann.
PCT/DE2002/003200 2001-08-30 2002-08-30 Elektrolumineszierender körper WO2003026355A2 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US10/488,487 US7135711B2 (en) 2001-08-30 2002-08-30 Electroluminescent body
JP2003529816A JP2005503043A (ja) 2001-08-30 2002-08-30 エレクトロルミネセンス体

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE2001142541 DE10142541B9 (de) 2001-08-30 2001-08-30 Elektrolumineszierender Körper
DE10142541.4 2001-08-30
DE20119230U DE20119230U1 (de) 2001-11-27 2001-11-27 Elektrolumineszierender Körper
DE20119230.6 2001-11-27

Publications (2)

Publication Number Publication Date
WO2003026355A2 WO2003026355A2 (de) 2003-03-27
WO2003026355A3 true WO2003026355A3 (de) 2003-12-24

Family

ID=26010031

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2002/003200 WO2003026355A2 (de) 2001-08-30 2002-08-30 Elektrolumineszierender körper

Country Status (3)

Country Link
US (1) US7135711B2 (de)
JP (1) JP2005503043A (de)
WO (1) WO2003026355A2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050051781A1 (en) * 2003-09-08 2005-03-10 United Epitaxy Company, Ltd. Light emitting diode and method of making the same
KR100624448B1 (ko) * 2004-12-02 2006-09-18 삼성전기주식회사 반도체 발광소자 및 그 제조방법
KR20070088145A (ko) * 2006-02-24 2007-08-29 엘지전자 주식회사 발광 다이오드 및 그 제조방법
DE102006046038A1 (de) * 2006-09-28 2008-04-03 Osram Opto Semiconductors Gmbh LED-Halbleiterkörper und Verwendung eines LED-Halbleiterkörpers
DE102007022947B4 (de) * 2007-04-26 2022-05-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen
US9293656B2 (en) * 2012-11-02 2016-03-22 Epistar Corporation Light emitting device
US8716723B2 (en) * 2008-08-18 2014-05-06 Tsmc Solid State Lighting Ltd. Reflective layer between light-emitting diodes
DE102010032041A1 (de) 2010-07-23 2012-01-26 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Bauelement und Verfahren zur Herstellung von strahlungsemittierenden Bauelemnenten
JPWO2015111134A1 (ja) 2014-01-21 2017-03-23 創光科学株式会社 窒化物半導体発光素子
JP2016081562A (ja) 2014-10-09 2016-05-16 ソニー株式会社 表示装置、表示装置の製造方法および電子機器

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04223380A (ja) * 1990-12-25 1992-08-13 Stanley Electric Co Ltd 基板付ｌｅｄチップ及びその製造方法
US5264715A (en) * 1992-07-06 1993-11-23 Honeywell Inc. Emitting with structures located at positions which prevent certain disadvantageous modes and enhance generation of light in advantageous modes
WO1999031738A2 (en) * 1997-12-16 1999-06-24 Koninklijke Philips Electronics N.V. Aiii-nitride channeled led
EP0977280A2 (de) * 1998-07-28 2000-02-02 Interuniversitair Micro-Elektronica Centrum Vzw Hocheffiziente strahlungemittierende Vorrichtungen und Herstellungsverfahren
WO2000045443A1 (en) * 1999-01-28 2000-08-03 Nova Crystals, Inc. High performance light emitting diodes
DE19911717A1 (de) * 1999-03-16 2000-09-28 Osram Opto Semiconductors Gmbh Monolithisches elektrolumineszierendes Bauelement und Verfahren zu dessen Herstellung
WO2001041219A1 (en) * 1999-12-03 2001-06-07 Cree Lighting Company Micro-led arrays with enhanced light extraction

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5309001A (en) 1991-11-25 1994-05-03 Sharp Kabushiki Kaisha Light-emitting diode having a surface electrode of a tree-like form
US5537433A (en) * 1993-07-22 1996-07-16 Sharp Kabushiki Kaisha Semiconductor light emitter
WO1996037000A1 (de) 1995-05-18 1996-11-21 Siemens Aktiengesellschaft Lichtemittierendes halbleiterbauelement
US6117529A (en) * 1996-12-18 2000-09-12 Gunther Leising Organic electroluminescence devices and displays
US5813752A (en) * 1997-05-27 1998-09-29 Philips Electronics North America Corporation UV/blue LED-phosphor device with short wave pass, long wave pass band pass and peroit filters
US20020017652A1 (en) * 2000-08-08 2002-02-14 Stefan Illek Semiconductor chip for optoelectronics
US6563142B2 (en) * 2001-07-11 2003-05-13 Lumileds Lighting, U.S., Llc Reducing the variation of far-field radiation patterns of flipchip light emitting diodes

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04223380A (ja) * 1990-12-25 1992-08-13 Stanley Electric Co Ltd 基板付ｌｅｄチップ及びその製造方法
US5264715A (en) * 1992-07-06 1993-11-23 Honeywell Inc. Emitting with structures located at positions which prevent certain disadvantageous modes and enhance generation of light in advantageous modes
WO1999031738A2 (en) * 1997-12-16 1999-06-24 Koninklijke Philips Electronics N.V. Aiii-nitride channeled led
EP0977280A2 (de) * 1998-07-28 2000-02-02 Interuniversitair Micro-Elektronica Centrum Vzw Hocheffiziente strahlungemittierende Vorrichtungen und Herstellungsverfahren
WO2000045443A1 (en) * 1999-01-28 2000-08-03 Nova Crystals, Inc. High performance light emitting diodes
DE19911717A1 (de) * 1999-03-16 2000-09-28 Osram Opto Semiconductors Gmbh Monolithisches elektrolumineszierendes Bauelement und Verfahren zu dessen Herstellung
WO2001041219A1 (en) * 1999-12-03 2001-06-07 Cree Lighting Company Micro-led arrays with enhanced light extraction

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 016, no. 574 (E - 1298) 14 December 1992 (1992-12-14) *

Also Published As

Publication number Publication date
JP2005503043A (ja) 2005-01-27
WO2003026355A2 (de) 2003-03-27
US7135711B2 (en) 2006-11-14
US20050001223A1 (en) 2005-01-06

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