BR112013022631A2 - matriz de vcsel - Google Patents

matriz de vcsel

Info

Publication number
BR112013022631A2
BR112013022631A2 BR112013022631A BR112013022631A BR112013022631A2 BR 112013022631 A2 BR112013022631 A2 BR 112013022631A2 BR 112013022631 A BR112013022631 A BR 112013022631A BR 112013022631 A BR112013022631 A BR 112013022631A BR 112013022631 A2 BR112013022631 A2 BR 112013022631A2
Authority
BR
Brazil
Prior art keywords
vcsel matrix
vcsel
matrix
Prior art date
Application number
BR112013022631A
Other languages
English (en)
Inventor
Philipp Henning Gerlach
Original Assignee
Koninkl Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Nv filed Critical Koninkl Philips Nv
Publication of BR112013022631A2 publication Critical patent/BR112013022631A2/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18341—Intra-cavity contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0207—Substrates having a special shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2081—Methods of obtaining the confinement using special etching techniques
BR112013022631A 2011-03-09 2012-03-02 matriz de vcsel BR112013022631A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP11157527 2011-03-09
PCT/IB2012/051003 WO2012120426A1 (en) 2011-03-09 2012-03-02 Vcsel array with increased efficiency

Publications (1)

Publication Number Publication Date
BR112013022631A2 true BR112013022631A2 (pt) 2016-12-06

Family

ID=45833502

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112013022631A BR112013022631A2 (pt) 2011-03-09 2012-03-02 matriz de vcsel

Country Status (7)

Country Link
US (1) US8891569B2 (pt)
EP (1) EP2684263B1 (pt)
JP (1) JP5752814B2 (pt)
CN (1) CN103403986B (pt)
BR (1) BR112013022631A2 (pt)
RU (1) RU2587497C2 (pt)
WO (1) WO2012120426A1 (pt)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9038883B2 (en) 2013-09-11 2015-05-26 Princeton Optronics Inc. VCSEL packaging
AU2016298390B2 (en) * 2015-07-30 2021-09-02 Optipulse Inc. Rigid high power and high speed lasing grid structures
US10630053B2 (en) 2015-07-30 2020-04-21 Optipulse Inc. High power laser grid structure
US10958350B2 (en) 2017-08-11 2021-03-23 Optipulse Inc. Laser grid structures for wireless high speed data transfers
US10374705B2 (en) 2017-09-06 2019-08-06 Optipulse Inc. Method and apparatus for alignment of a line-of-sight communications link
US10199794B1 (en) * 2017-09-20 2019-02-05 Lumentum Operations Llc Electrically isolating adjacent vertical-emitting devices
CN108233176B (zh) * 2018-01-28 2020-07-28 海南师范大学 一种电注入GaN垂直腔面发射激光器结构及其制备方法
US11245249B2 (en) 2018-03-01 2022-02-08 Ricoh Company, Ltd. Reflector, surface emitting laser, method for manufacturing reflector, and method for manufacturing surface emitting laser
CN110277731B (zh) * 2018-03-15 2020-09-25 山东大学 一种iii-v族硅基低折射率缝隙结构dbr激光器及集成方法
US11581705B2 (en) 2019-04-08 2023-02-14 Lumentum Operations Llc Vertical-cavity surface-emitting laser with dense epi-side contacts
US20230246424A1 (en) * 2020-05-01 2023-08-03 Sony Semiconductor Solutions Corporation Light-emitting element array and method of producing light-emitting element array

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0704913B1 (en) * 1994-09-28 1999-09-01 Nippon Telegraph And Telephone Corporation Optical semiconductor device and method of fabricating the same
US5513204A (en) * 1995-04-12 1996-04-30 Optical Concepts, Inc. Long wavelength, vertical cavity surface emitting laser with vertically integrated optical pump
US5729566A (en) * 1996-06-07 1998-03-17 Picolight Incorporated Light emitting device having an electrical contact through a layer containing oxidized material
US6560262B1 (en) 1999-01-26 2003-05-06 Triquint Technology Holding Co. Vertical cavity surface emitting laser array and a process for making same
JP3800856B2 (ja) * 1999-04-01 2006-07-26 富士ゼロックス株式会社 面発光レーザ及び面発光レーザアレイ
US6507595B1 (en) 1999-11-22 2003-01-14 Avalon Photonics Vertical-cavity surface-emitting laser comprised of single laser elements arranged on a common substrate
US6687281B2 (en) 2000-08-22 2004-02-03 The Regents Of The University Of California Double intracavity contacted long-wavelength VCSELs
US6830940B1 (en) * 2000-11-16 2004-12-14 Optical Communication Products, Inc. Method and apparatus for performing whole wafer burn-in
US6589805B2 (en) 2001-03-26 2003-07-08 Gazillion Bits, Inc. Current confinement structure for vertical cavity surface emitting laser
US20030031218A1 (en) 2001-08-13 2003-02-13 Jang-Hun Yeh VCSEL structure and method of making same
JP4311610B2 (ja) * 2002-07-26 2009-08-12 株式会社リコー 面発光レーザ
DE60333632D1 (de) 2003-09-01 2010-09-16 Avalon Photonics Ag Hochenergie-Topemitter-VCSEL
JP2005217147A (ja) * 2004-01-29 2005-08-11 Seiko Epson Corp 受発光素子アレイ、光モジュール、および光伝達装置
KR20070039110A (ko) * 2004-07-30 2007-04-11 노바룩스 인코포레이티드 표면 발산 레이저 어레이의 접합 절연을 위한 장치, 시스템및 방법
JPWO2007116659A1 (ja) * 2006-03-23 2009-08-20 日本電気株式会社 面発光レーザ
JP2009094308A (ja) * 2007-10-10 2009-04-30 Fuji Xerox Co Ltd 半導体発光モジュール
JP2009246291A (ja) * 2008-03-31 2009-10-22 Furukawa Electric Co Ltd:The 面発光レーザアレイ素子
US7949024B2 (en) * 2009-02-17 2011-05-24 Trilumina Corporation Multibeam arrays of optoelectronic devices for high frequency operation

Also Published As

Publication number Publication date
US8891569B2 (en) 2014-11-18
RU2587497C2 (ru) 2016-06-20
RU2013145088A (ru) 2015-04-20
JP2014507812A (ja) 2014-03-27
US20130343418A1 (en) 2013-12-26
JP5752814B2 (ja) 2015-07-22
CN103403986B (zh) 2016-01-27
EP2684263A1 (en) 2014-01-15
EP2684263B1 (en) 2015-05-13
CN103403986A (zh) 2013-11-20
WO2012120426A1 (en) 2012-09-13

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Legal Events

Date Code Title Description
B06F Objections, documents and/or translations needed after an examination request according art. 34 industrial property law
B06U Preliminary requirement: requests with searches performed by other patent offices: suspension of the patent application procedure
B09A Decision: intention to grant
B11D Dismissal acc. art. 38, par 2 of ipl - failure to pay fee after grant in time