DE60329621D1 - Integriertes metallabscheidungs- und planarisierungsverfahren und vorrichtung dafür - Google Patents

Integriertes metallabscheidungs- und planarisierungsverfahren und vorrichtung dafür

Info

Publication number
DE60329621D1
DE60329621D1 DE60329621T DE60329621T DE60329621D1 DE 60329621 D1 DE60329621 D1 DE 60329621D1 DE 60329621 T DE60329621 T DE 60329621T DE 60329621 T DE60329621 T DE 60329621T DE 60329621 D1 DE60329621 D1 DE 60329621D1
Authority
DE
Germany
Prior art keywords
electroplating
substrate
electroetching
device therefor
metal separation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60329621T
Other languages
English (en)
Inventor
Laertis Economikos
Hariklia Deligianni
John M Cotte
Henry J Grabarz
Bomy Chen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE60329621D1 publication Critical patent/DE60329621D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60—Electroplating characterised by the structure or texture of the layers
    • C25D5/605—Surface topography of the layers, e.g. rough, dendritic or nodular layers
    • C25D5/611—Smooth layers
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/48—After-treatment of electroplated surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H01L21/32125—Planarisation by chemical mechanical polishing [CMP] by simultaneously passing an electrical current, i.e. electrochemical mechanical polishing, e.g. ECMP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684—Smoothing; Planarisation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S205/00—Electrolysis: processes, compositions used therein, and methods of preparing the compositions
    • Y10S205/917—Treatment of workpiece between coating steps

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemically Coating (AREA)
  • Weting (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
DE60329621T 2002-11-14 2003-11-14 Integriertes metallabscheidungs- und planarisierungsverfahren und vorrichtung dafür Expired - Lifetime DE60329621D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/294,200 US6773570B2 (en) 2002-11-14 2002-11-14 Integrated plating and planarization process and apparatus therefor
PCT/US2003/036208 WO2004046426A1 (en) 2002-11-14 2003-11-14 Integrated plating and planarization process and apparatus therefor

Publications (1)

Publication Number Publication Date
DE60329621D1 true DE60329621D1 (de) 2009-11-19

Family

ID=32296926

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60329621T Expired - Lifetime DE60329621D1 (de) 2002-11-14 2003-11-14 Integriertes metallabscheidungs- und planarisierungsverfahren und vorrichtung dafür

Country Status (9)

Country Link
US (1) US6773570B2 (de)
EP (1) EP1560949B1 (de)
JP (1) JP4398376B2 (de)
KR (1) KR100687129B1 (de)
CN (1) CN100465352C (de)
AT (1) ATE445034T1 (de)
AU (1) AU2003290804A1 (de)
DE (1) DE60329621D1 (de)
WO (1) WO2004046426A1 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8475636B2 (en) 2008-11-07 2013-07-02 Novellus Systems, Inc. Method and apparatus for electroplating
US20060113192A1 (en) * 2003-01-23 2006-06-01 Keiichi Kurashina Plating device and planting method
US20060003566A1 (en) * 2004-06-30 2006-01-05 Ismail Emesh Methods and apparatuses for semiconductor fabrication utilizing through-wafer interconnects
US9822461B2 (en) 2006-08-16 2017-11-21 Novellus Systems, Inc. Dynamic current distribution control apparatus and method for wafer electroplating
US8323460B2 (en) * 2007-06-20 2012-12-04 Lam Research Corporation Methods and systems for three-dimensional integrated circuit through hole via gapfill and overburden removal
CN100582314C (zh) * 2007-09-10 2010-01-20 厦门致力金刚石工具有限公司 抛镀机
DE102009003072A1 (de) * 2009-05-13 2010-11-18 Robert Bosch Gmbh Vorrichtung und Verfahren zum gleichzeitigen Be- oder Entschichten einer Mehrzahl von Werkstücken und Werkstück
JP5539511B2 (ja) * 2010-06-15 2014-07-02 東京エレクトロン株式会社 半導体装置の製造方法
US8518817B2 (en) * 2010-09-22 2013-08-27 International Business Machines Corporation Method of electrolytic plating and semiconductor device fabrication
TWI550139B (zh) 2011-04-04 2016-09-21 諾菲勒斯系統公司 用於裁整均勻輪廓之電鍍裝置
US9909228B2 (en) 2012-11-27 2018-03-06 Lam Research Corporation Method and apparatus for dynamic current distribution control during electroplating
US9670588B2 (en) 2013-05-01 2017-06-06 Lam Research Corporation Anisotropic high resistance ionic current source (AHRICS)
JP6198456B2 (ja) * 2013-05-20 2017-09-20 東京エレクトロン株式会社 基板の処理方法及びテンプレート
CN104742007B (zh) * 2013-12-30 2017-08-25 中芯国际集成电路制造(北京)有限公司 化学机械研磨装置和化学机械研磨方法
US9752248B2 (en) 2014-12-19 2017-09-05 Lam Research Corporation Methods and apparatuses for dynamically tunable wafer-edge electroplating
US9567685B2 (en) 2015-01-22 2017-02-14 Lam Research Corporation Apparatus and method for dynamic control of plated uniformity with the use of remote electric current
US9816194B2 (en) 2015-03-19 2017-11-14 Lam Research Corporation Control of electrolyte flow dynamics for uniform electroplating
US10014170B2 (en) 2015-05-14 2018-07-03 Lam Research Corporation Apparatus and method for electrodeposition of metals with the use of an ionically resistive ionically permeable element having spatially tailored resistivity
US9988733B2 (en) 2015-06-09 2018-06-05 Lam Research Corporation Apparatus and method for modulating azimuthal uniformity in electroplating
TWI663294B (zh) 2017-12-15 2019-06-21 Chipbond Technology Corporation 電鍍裝置及其壓力艙
US12116689B2 (en) * 2021-01-26 2024-10-15 Seagate Technology Llc Selective screen electroplating

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5911619A (en) * 1997-03-26 1999-06-15 International Business Machines Corporation Apparatus for electrochemical mechanical planarization
US6004880A (en) * 1998-02-20 1999-12-21 Lsi Logic Corporation Method of single step damascene process for deposition and global planarization
US6328872B1 (en) * 1999-04-03 2001-12-11 Nutool, Inc. Method and apparatus for plating and polishing a semiconductor substrate
US6413388B1 (en) * 2000-02-23 2002-07-02 Nutool Inc. Pad designs and structures for a versatile materials processing apparatus
US6270646B1 (en) * 1999-12-28 2001-08-07 International Business Machines Corporation Electroplating apparatus and method using a compressible contact
US6454916B1 (en) * 2000-01-05 2002-09-24 Advanced Micro Devices, Inc. Selective electroplating with direct contact chemical polishing
US6478936B1 (en) * 2000-05-11 2002-11-12 Nutool Inc. Anode assembly for plating and planarizing a conductive layer
US6793797B2 (en) * 2002-03-26 2004-09-21 Taiwan Semiconductor Manufacturing Co., Ltd Method for integrating an electrodeposition and electro-mechanical polishing process

Also Published As

Publication number Publication date
US6773570B2 (en) 2004-08-10
US20040094427A1 (en) 2004-05-20
CN100465352C (zh) 2009-03-04
KR20050067180A (ko) 2005-06-30
EP1560949A4 (de) 2007-02-28
EP1560949B1 (de) 2009-10-07
EP1560949A1 (de) 2005-08-10
ATE445034T1 (de) 2009-10-15
KR100687129B1 (ko) 2007-02-27
WO2004046426A1 (en) 2004-06-03
JP4398376B2 (ja) 2010-01-13
AU2003290804A1 (en) 2004-06-15
CN1705774A (zh) 2005-12-07
JP2006506523A (ja) 2006-02-23

Similar Documents

Publication Publication Date Title
DE60329621D1 (de) Integriertes metallabscheidungs- und planarisierungsverfahren und vorrichtung dafür
TW200501270A (en) Apparatus and method for depositing and planarizing thin films of semiconductor wafers
US6848977B1 (en) Polishing pad for electrochemical mechanical polishing
WO2006038030A3 (en) Equipment for wafer bonding
TW200518213A (en) Copper CMP defect reduction by extra slurry polish
ATE448049T1 (de) Verfahren und vorrichtungen für elektro-chemisch- mechanisches polieren
TW200706307A (en) Semiconductor wafer peripheral edge polisher and method therefor
TW200420697A (en) CMP method utilizing amphiphilic nonionic surfactants
TW200624527A (en) A cmp composition with a polymer additive for polishing noble metals
WO2004076574A3 (en) Cmp composition comprising a sulfonic acid and a method for polishing noble metals
ATE296185T1 (de) Verfahren und vorrichtung zum planarisieren von mikroelektronischem substratenaufbau
EP1376686A3 (de) Verfahren zum Verschluss von Durchgangslöchern im Siliziumsubstrat
TW349244B (en) Method of fabricating a semiconductor device using a CMP process and a polishing apparatus for such a CMP process
EP1167585A3 (de) Verfahren und Apparat zur Herstellung von Verbindungsleitungen, Polierflüssigkeit und Polierverfahren
EP1833083A4 (de) Silizium-waferpolierverfahren und silizium-waferherstellungsverfahren, vorrichtung zum polieren von scheibenförmiger arbeit und siliziumwafer
DE602004019408D1 (de) Verfahren zum entfernen von zunder und verhindern von oxidation bei verarbeitetem blech
WO2002075804A3 (en) Planarization of substrates using electrochemical mechanical polishing
WO2004097929A3 (en) Method and apparatus for reduction of defects in wet processed layers
EP1676672A4 (de) Wafer-halteträger, diesen verwendende doppelseitige schleifvorrichtung und doppelseitiges schleifverfahren für wafer
TW200731380A (en) Semiconductor wafer manufacturing method, semiconductor wafer double-sided grinding method, and semiconductor wafer double-sided grinding apparatus
WO2004009289A3 (en) Rising after chemical-mechanical planarization process applied on a wafer
TW200634918A (en) Fabrication process of semiconductor device and polishing method
TW200735231A (en) Method and system for electroprocessing conductive layers
TW200625527A (en) Method for fabricating one or more metal damascene structures in a semiconductor wafer
TW200625434A (en) Semiconductor wafer material removal apparatus and method for operating the same

Legal Events

Date Code Title Description
8320 Willingness to grant licences declared (paragraph 23)
8364 No opposition during term of opposition