DE60328354D1 - Programmierverfahren eines elektrisch programmierbaren, nichtflüchtigen Multibithalbleiterspeichers - Google Patents

Programmierverfahren eines elektrisch programmierbaren, nichtflüchtigen Multibithalbleiterspeichers

Info

Publication number
DE60328354D1
DE60328354D1 DE60328354T DE60328354T DE60328354D1 DE 60328354 D1 DE60328354 D1 DE 60328354D1 DE 60328354 T DE60328354 T DE 60328354T DE 60328354 T DE60328354 T DE 60328354T DE 60328354 D1 DE60328354 D1 DE 60328354D1
Authority
DE
Germany
Prior art keywords
semiconductor memory
electrically programmable
programming method
volatile multi
bit semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60328354T
Other languages
English (en)
Inventor
Angelo Visconti
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Application granted granted Critical
Publication of DE60328354D1 publication Critical patent/DE60328354D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/32—Timing circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
DE60328354T 2003-02-20 2003-02-20 Programmierverfahren eines elektrisch programmierbaren, nichtflüchtigen Multibithalbleiterspeichers Expired - Lifetime DE60328354D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP03425096A EP1450375B1 (de) 2003-02-20 2003-02-20 Programmierverfahren eines elektrisch programmierbaren, nichtflüchtigen Multibithalbleiterspeichers

Publications (1)

Publication Number Publication Date
DE60328354D1 true DE60328354D1 (de) 2009-08-27

Family

ID=32731644

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60328354T Expired - Lifetime DE60328354D1 (de) 2003-02-20 2003-02-20 Programmierverfahren eines elektrisch programmierbaren, nichtflüchtigen Multibithalbleiterspeichers

Country Status (3)

Country Link
US (1) US7110300B2 (de)
EP (1) EP1450375B1 (de)
DE (1) DE60328354D1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7307884B2 (en) * 2004-06-15 2007-12-11 Sandisk Corporation Concurrent programming of non-volatile memory
US7936829B2 (en) * 2004-10-22 2011-05-03 Lsi Corporation Driving multiple consecutive bits in a serial data stream at multiple voltage levels
US7221592B2 (en) * 2005-02-25 2007-05-22 Micron Technology, Inc. Multiple level programming in a non-volatile memory device
US7251160B2 (en) * 2005-03-16 2007-07-31 Sandisk Corporation Non-volatile memory and method with power-saving read and program-verify operations
KR100705220B1 (ko) * 2005-09-15 2007-04-06 주식회사 하이닉스반도체 프로그램 속도를 증가시키기 위한 플래시 메모리 장치의소거 및 프로그램 방법
US7180780B1 (en) * 2005-11-17 2007-02-20 Macronix International Co., Ltd. Multi-level-cell programming methods of non-volatile memories
US7495966B2 (en) 2006-05-01 2009-02-24 Micron Technology, Inc. Memory voltage cycle adjustment
US7639533B2 (en) 2008-02-08 2009-12-29 Macronix International Co., Ltd. Multi-level memory cell programming methods
US9312002B2 (en) 2014-04-04 2016-04-12 Sandisk Technologies Inc. Methods for programming ReRAM devices

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW389909B (en) * 1995-09-13 2000-05-11 Toshiba Corp Nonvolatile semiconductor memory device and its usage
US5926409A (en) * 1997-09-05 1999-07-20 Information Storage Devices, Inc. Method and apparatus for an adaptive ramp amplitude controller in nonvolatile memory application
EP0908895A1 (de) * 1997-10-09 1999-04-14 STMicroelectronics S.r.l. Reguliertes Heiss-Elektronen-Schreibverfahren für nicht-flüchtige Speicherzellen
US6219276B1 (en) * 2000-02-25 2001-04-17 Advanced Micro Devices, Inc. Multilevel cell programming
DE60045073D1 (de) * 2000-10-13 2010-11-18 St Microelectronics Srl Verfahren zum Speichern und Lesen von Daten eines nichtflüchtigen Multibitspeichers mit einer nichtbinären Anzahl von Bits pro Zelle
DE60139670D1 (de) * 2001-04-10 2009-10-08 St Microelectronics Srl Verfahren zur Programmierung nichtflüchtiger Speicherzellen mit Programmier- und Prüfalgorithmus unter Verwendung treppenförmiger Spannungsimpulse mit variablem Stufenabstand
US6967872B2 (en) * 2001-12-18 2005-11-22 Sandisk Corporation Method and system for programming and inhibiting multi-level, non-volatile memory cells

Also Published As

Publication number Publication date
US20040240270A1 (en) 2004-12-02
US7110300B2 (en) 2006-09-19
EP1450375B1 (de) 2009-07-15
EP1450375A1 (de) 2004-08-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition