DE60318837D1 - mit geteiltem Gate sowie Programmierverfahren zur Vermeidung von Störungen - Google Patents

mit geteiltem Gate sowie Programmierverfahren zur Vermeidung von Störungen

Info

Publication number
DE60318837D1
DE60318837D1 DE60318837T DE60318837T DE60318837D1 DE 60318837 D1 DE60318837 D1 DE 60318837D1 DE 60318837 T DE60318837 T DE 60318837T DE 60318837 T DE60318837 T DE 60318837T DE 60318837 D1 DE60318837 D1 DE 60318837D1
Authority
DE
Germany
Prior art keywords
split gate
programming methods
avoid disturbances
disturbances
avoid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60318837T
Other languages
English (en)
Other versions
DE60318837T2 (de
Inventor
Filippo Marinelli
Nadia Harabech
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EM Microelectronic Marin SA
Original Assignee
EM Microelectronic Marin SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EM Microelectronic Marin SA filed Critical EM Microelectronic Marin SA
Application granted granted Critical
Publication of DE60318837D1 publication Critical patent/DE60318837D1/de
Publication of DE60318837T2 publication Critical patent/DE60318837T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
DE60318837T 2003-07-23 2003-07-23 Nicht flüchtiges Speichermatrix mit Speicherzellen mit geteiltem Gate sowie Programmierverfahren zur Vermeidung von Störungen Expired - Lifetime DE60318837T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP03016786A EP1501099B1 (de) 2003-07-23 2003-07-23 Nicht flüchtiges Speichermatrix mit Speicherzellen mit geteiltem Gate sowie Programmierverfahren zur Vermeidung von Störungen

Publications (2)

Publication Number Publication Date
DE60318837D1 true DE60318837D1 (de) 2008-03-13
DE60318837T2 DE60318837T2 (de) 2009-01-22

Family

ID=33483932

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60318837T Expired - Lifetime DE60318837T2 (de) 2003-07-23 2003-07-23 Nicht flüchtiges Speichermatrix mit Speicherzellen mit geteiltem Gate sowie Programmierverfahren zur Vermeidung von Störungen

Country Status (3)

Country Link
US (1) US20050018504A1 (de)
EP (1) EP1501099B1 (de)
DE (1) DE60318837T2 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060238702A1 (en) 1999-04-30 2006-10-26 Advanced Medical Optics, Inc. Ophthalmic lens combinations
US20030060881A1 (en) * 1999-04-30 2003-03-27 Advanced Medical Optics, Inc. Intraocular lens combinations
US7763069B2 (en) 2002-01-14 2010-07-27 Abbott Medical Optics Inc. Accommodating intraocular lens with outer support structure
US7150759B2 (en) * 2002-01-14 2006-12-19 Advanced Medical Optics, Inc. Multi-mechanistic accommodating intraocular lenses
US20040082993A1 (en) 2002-10-25 2004-04-29 Randall Woods Capsular intraocular lens implant having a refractive liquid therein
US20040082995A1 (en) * 2002-10-25 2004-04-29 Randall Woods Telescopic intraocular lens implant for treating age-related macular degeneration
US7662180B2 (en) 2002-12-05 2010-02-16 Abbott Medical Optics Inc. Accommodating intraocular lens and method of manufacture thereof
US20050131535A1 (en) * 2003-12-15 2005-06-16 Randall Woods Intraocular lens implant having posterior bendable optic
CA2618021C (en) * 2005-08-05 2014-08-05 Visiogen, Inc. Accommodating diffractive intraocular lens
US9636213B2 (en) * 2005-09-30 2017-05-02 Abbott Medical Optics Inc. Deformable intraocular lenses and lens systems
US8241355B2 (en) 2005-10-28 2012-08-14 Abbott Medical Optics Inc. Haptic for accommodating intraocular lens
US20070168027A1 (en) * 2006-01-13 2007-07-19 Brady Daniel G Accommodating diffractive intraocular lens
US8048156B2 (en) * 2006-12-29 2011-11-01 Abbott Medical Optics Inc. Multifocal accommodating intraocular lens
US7713299B2 (en) * 2006-12-29 2010-05-11 Abbott Medical Optics Inc. Haptic for accommodating intraocular lens
US20080161914A1 (en) 2006-12-29 2008-07-03 Advanced Medical Optics, Inc. Pre-stressed haptic for accommodating intraocular lens
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
US8034108B2 (en) * 2008-03-28 2011-10-11 Abbott Medical Optics Inc. Intraocular lens having a haptic that includes a cap
US8043372B2 (en) 2008-10-14 2011-10-25 Abbott Medical Optics Inc. Intraocular lens and capsular ring
WO2010151693A2 (en) 2009-06-26 2010-12-29 Abbott Medical Optics Inc. Accommodating intraocular lenses
AU2010279561B2 (en) * 2009-08-03 2014-11-27 Johnson & Johnson Surgical Vision, Inc. Intraocular lens for providing accomodative vision
EP2470118A1 (de) * 2009-08-27 2012-07-04 Abbott Medical Optics Inc. Fixierung von augenimplantaten
US9084674B2 (en) 2012-05-02 2015-07-21 Abbott Medical Optics Inc. Intraocular lens with shape changing capability to provide enhanced accomodation and visual acuity
US8945215B2 (en) 2012-05-10 2015-02-03 Abbott Medical Optics Inc. Accommodating intraocular lens with a compressible inner structure
EP3681438A1 (de) 2017-09-11 2020-07-22 AMO Groningen B.V. Verfahren und vorrichtungen zur erhöhung der positionsstabilität von intraokularlinsen

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7071060B1 (en) * 1996-02-28 2006-07-04 Sandisk Corporation EEPROM with split gate source side infection with sidewall spacers
US5596532A (en) * 1995-10-18 1997-01-21 Sandisk Corporation Flash EEPROM self-adaptive voltage generation circuit operative within a continuous voltage source range
US6211547B1 (en) * 1997-11-24 2001-04-03 Winbond Electronics Corporation Semiconductor memory array with buried drain lines and processing methods therefor
US6058060A (en) * 1998-12-31 2000-05-02 Invox Technology Multi-bit-per-cell and analog/multi-level non-volatile memories with improved resolution and signal-to noise ratio
US6400603B1 (en) * 2000-05-03 2002-06-04 Advanced Technology Materials, Inc. Electronically-eraseable programmable read-only memory having reduced-page-size program and erase
US6731544B2 (en) * 2001-05-14 2004-05-04 Nexflash Technologies, Inc. Method and apparatus for multiple byte or page mode programming of a flash memory array

Also Published As

Publication number Publication date
US20050018504A1 (en) 2005-01-27
DE60318837T2 (de) 2009-01-22
EP1501099A1 (de) 2005-01-26
EP1501099B1 (de) 2008-01-23

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