DE60313668D1 - Selbstadaptierende vorspannungsschaltung zur ermöglichung einer dynamischen kontrolle des ruhestromes in einem linearen leistungsverstärker - Google Patents

Selbstadaptierende vorspannungsschaltung zur ermöglichung einer dynamischen kontrolle des ruhestromes in einem linearen leistungsverstärker

Info

Publication number
DE60313668D1
DE60313668D1 DE60313668T DE60313668T DE60313668D1 DE 60313668 D1 DE60313668 D1 DE 60313668D1 DE 60313668 T DE60313668 T DE 60313668T DE 60313668 T DE60313668 T DE 60313668T DE 60313668 D1 DE60313668 D1 DE 60313668D1
Authority
DE
Germany
Prior art keywords
self
amplifier
circuit
quiescent current
linear power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60313668T
Other languages
English (en)
Other versions
DE60313668T2 (de
Inventor
Christophe Joly
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Application granted granted Critical
Publication of DE60313668D1 publication Critical patent/DE60313668D1/de
Publication of DE60313668T2 publication Critical patent/DE60313668T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
    • H03F1/0266—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A by using a signal derived from the input signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/18—Indexing scheme relating to amplifiers the bias of the gate of a FET being controlled by a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/318—A matching circuit being used as coupling element between two amplifying stages

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Transmitters (AREA)
DE60313668T 2002-12-16 2003-11-28 Selbstadaptierende vorspannungsschaltung zur ermöglichung einer dynamischen kontrolle des ruhestromes in einem linearen leistungsverstärker Expired - Lifetime DE60313668T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US43374202P 2002-12-16 2002-12-16
US433742P 2002-12-16
PCT/IB2003/005515 WO2004055972A1 (en) 2002-12-16 2003-11-28 Self adaptable bias circuit for enabling dynamic control of quiescent current in a linear power amplifier

Publications (2)

Publication Number Publication Date
DE60313668D1 true DE60313668D1 (de) 2007-06-14
DE60313668T2 DE60313668T2 (de) 2008-01-31

Family

ID=32595229

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60313668T Expired - Lifetime DE60313668T2 (de) 2002-12-16 2003-11-28 Selbstadaptierende vorspannungsschaltung zur ermöglichung einer dynamischen kontrolle des ruhestromes in einem linearen leistungsverstärker

Country Status (8)

Country Link
US (1) US7265627B2 (de)
EP (1) EP1586161B1 (de)
JP (1) JP4549863B2 (de)
CN (1) CN100557947C (de)
AT (1) ATE361581T1 (de)
AU (1) AU2003279487A1 (de)
DE (1) DE60313668T2 (de)
WO (1) WO2004055972A1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6998918B2 (en) * 2004-04-08 2006-02-14 Sige Semiconductor (U.S.), Corp. Automatic current reduction biasing technique for RF amplifier
JP2007329831A (ja) * 2006-06-09 2007-12-20 Matsushita Electric Ind Co Ltd 増幅回路
US7768353B2 (en) 2008-06-13 2010-08-03 Samsung Electro-Mechanics Company, Ltd. Systems and methods for switching mode power amplifier control
WO2010064091A1 (en) * 2008-12-03 2010-06-10 Freescale Semiconductor, Inc. Operating parameter control for a power amplifier
US8106712B2 (en) * 2008-12-24 2012-01-31 Georgia Tech Research Corporation Systems and methods for self-mixing adaptive bias circuit for power amplifier
CN101651477B (zh) * 2009-09-04 2013-01-02 惠州市正源微电子有限公司 射频功率放大器效率的增强方法及其效率增强电路
CN103513191B (zh) * 2012-06-21 2016-04-27 国网山东省电力公司莱西市供电公司 电源负载测试装置
CN105738835B (zh) * 2012-06-21 2018-11-16 浙江海澄德畅机械有限公司 电源负载测试装置
TWI509979B (zh) * 2013-01-04 2015-11-21 Advanced Semiconductor Eng 電子系統、射頻功率放大器及其偏壓點動態調整方法
WO2015162454A1 (en) 2014-04-23 2015-10-29 Telefonaktiebolaget L M Ericsson (Publ) Adaptive self-bias
US9712125B2 (en) * 2015-02-15 2017-07-18 Skyworks Solutions, Inc. Power amplification system with shared common base biasing
KR102069634B1 (ko) * 2018-07-05 2020-01-23 삼성전기주식회사 선형성 보상기능을 갖는 다단 파워 증폭 장치
US11415623B2 (en) * 2019-03-28 2022-08-16 Teradyne, Inc. Test system supporting reverse compliance
WO2021113880A1 (en) * 2021-01-13 2021-06-10 Futurewei Technologies, Inc. Hybrid configurable rf power amplifier
CN113411054B (zh) * 2021-08-19 2021-11-19 深圳飞骧科技股份有限公司 射频放大器及其输出1dB压缩点动态调整电路
CN115913138B (zh) * 2023-02-24 2023-06-06 成都明夷电子科技有限公司 偏置电路、功率放大器和电子设备

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07154169A (ja) * 1993-11-30 1995-06-16 Matsushita Electric Ind Co Ltd 高周波電力増幅器
JPH10270960A (ja) * 1997-01-21 1998-10-09 Matsushita Electric Ind Co Ltd 高周波電力増幅器
DE69813049T2 (de) 1997-01-21 2004-02-12 Matsushita Electric Industrial Co., Ltd., Kadoma Hochfrequenzleistungsverstärker
JP3517766B2 (ja) * 1997-02-20 2004-04-12 株式会社ルネサステクノロジ Ｒｆ電力増幅回路および移動体通信端末装置
JPH1117562A (ja) * 1997-06-26 1999-01-22 Hitachi Denshi Ltd 送信出力電力の制御回路
US6233440B1 (en) * 1998-08-05 2001-05-15 Triquint Semiconductor, Inc. RF power amplifier with variable bias current
US6559722B1 (en) * 1999-08-10 2003-05-06 Anadigics, Inc. Low bias current/temperature compensation current mirror for linear power amplifier
US6304145B1 (en) * 2000-02-02 2001-10-16 Nokia Networks Oy Large signal amplifier gain compensation circuit
JP4014072B2 (ja) * 2000-03-31 2007-11-28 株式会社ルネサステクノロジ 電力増幅器モジュール
US6448855B1 (en) * 2000-04-13 2002-09-10 Koninklijke Philips Electronics N.V. Accurate power detection circuit for use in a power amplifier
WO2002003543A1 (fr) * 2000-06-30 2002-01-10 Mitsubishi Denki Kabushiki Kaisha Amplificateur haute frequence
WO2002003544A1 (fr) * 2000-06-30 2002-01-10 Mitsubishi Denki Kabushiki Kaisha Amplificateur haute frequence
EP1358715B1 (de) 2001-02-09 2012-08-15 Hewlett-Packard Development Company, L.P. Verfahren zum energiesparenden betrieb eines mobilfunkgerätes und mobilfunkgerät
US6445247B1 (en) * 2001-06-01 2002-09-03 Qualcomm Incorporated Self-controlled high efficiency power amplifier
US6778018B2 (en) * 2001-07-16 2004-08-17 Koninklijke Philips Electronics N.V. Linear power amplifier
US6653902B1 (en) * 2002-09-03 2003-11-25 Triquint Semiconductor, Inc. Amplifier power control circuit

Also Published As

Publication number Publication date
DE60313668T2 (de) 2008-01-31
CN100557947C (zh) 2009-11-04
JP2006510290A (ja) 2006-03-23
CN1788412A (zh) 2006-06-14
AU2003279487A1 (en) 2004-07-09
WO2004055972A1 (en) 2004-07-01
US7265627B2 (en) 2007-09-04
EP1586161B1 (de) 2007-05-02
EP1586161A1 (de) 2005-10-19
ATE361581T1 (de) 2007-05-15
JP4549863B2 (ja) 2010-09-22
US20060114062A1 (en) 2006-06-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NXP B.V., EINDHOVEN, NL

8328 Change in the person/name/address of the agent

Representative=s name: EISENFUEHR, SPEISER & PARTNER, 10178 BERLIN