DE60239054D1 - Verfahren zur bestimmung der kritischen grösse eines einschlusses in einem sputtertarget aus aluminium oder aluminiumlegierung - Google Patents
Verfahren zur bestimmung der kritischen grösse eines einschlusses in einem sputtertarget aus aluminium oder aluminiumlegierungInfo
- Publication number
- DE60239054D1 DE60239054D1 DE60239054T DE60239054T DE60239054D1 DE 60239054 D1 DE60239054 D1 DE 60239054D1 DE 60239054 T DE60239054 T DE 60239054T DE 60239054 T DE60239054 T DE 60239054T DE 60239054 D1 DE60239054 D1 DE 60239054D1
- Authority
- DE
- Germany
- Prior art keywords
- aluminum
- inclusion
- determining
- sputter target
- critical size
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US28148201P | 2001-04-04 | 2001-04-04 | |
PCT/US2002/010516 WO2002081767A2 (en) | 2001-04-04 | 2002-04-04 | A method for determining a critical size of an inclusion in aluminum or aluminum alloy sputtering target |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60239054D1 true DE60239054D1 (de) | 2011-03-10 |
Family
ID=23077487
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60239054T Expired - Lifetime DE60239054D1 (de) | 2001-04-04 | 2002-04-04 | Verfahren zur bestimmung der kritischen grösse eines einschlusses in einem sputtertarget aus aluminium oder aluminiumlegierung |
Country Status (6)
Country | Link |
---|---|
US (1) | US7087142B2 (de) |
EP (1) | EP1381703B1 (de) |
JP (1) | JP4303970B2 (de) |
KR (1) | KR100841915B1 (de) |
DE (1) | DE60239054D1 (de) |
WO (1) | WO2002081767A2 (de) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4349904B2 (ja) | 2001-08-09 | 2009-10-21 | トーソー エスエムディー,インク. | 寸法と位置によって分類された欠陥の種類による、非破壊的なターゲット清浄度特性決定のための方法と装置 |
TWI247576B (en) * | 2003-03-28 | 2006-01-11 | Hon Hai Prec Ind Co Ltd | Method of manufacturing electromagnetic interference shield |
US10201070B2 (en) * | 2012-01-10 | 2019-02-05 | Electron Power Systems, Inc. | Systems and methods for generating electron spiral toroids |
Family Cites Families (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL104695C (de) * | 1955-06-20 | |||
US4054173A (en) * | 1974-12-23 | 1977-10-18 | Hunter Engineering Co., Inc. | Apparatus for producing completely recrystallized metal sheet |
US4474225A (en) * | 1982-05-24 | 1984-10-02 | Aluminum Company Of America | Method of direct chill casting |
US4568007A (en) * | 1984-01-23 | 1986-02-04 | Vesuvius Crucible Company | Refractory shroud for continuous casting |
US4933296A (en) | 1985-08-02 | 1990-06-12 | General Electric Company | N+ amorphous silicon thin film transistors for matrix addressed liquid crystal displays |
US4740481A (en) * | 1986-01-21 | 1988-04-26 | Motorola Inc. | Method of preventing hillock formation in polysilicon layer by oxygen implanation |
US5177035A (en) * | 1986-06-27 | 1993-01-05 | The Carborundum Company | Molten metal filter and method for making same |
US4797164A (en) * | 1986-09-30 | 1989-01-10 | Swiss Aluminum Ltd. | Process for manufacturing a fine-grained recrystallized sheet |
EP0412843B1 (de) | 1989-08-11 | 1996-05-29 | Sharp Kabushiki Kaisha | Lichtadressierte Flüssigkristallanzeigevorrichtung |
US5191452A (en) | 1989-09-20 | 1993-03-02 | Honeywell Inc. | Active matrix liquid crystal display fabrication for grayscale |
FR2664618B1 (fr) * | 1990-07-10 | 1993-10-08 | Pechiney Aluminium | Procede de fabrication de cathodes pour pulverisation cathodique a base d'aluminium de tres haute purete. |
JP2610698B2 (ja) | 1990-07-17 | 1997-05-14 | シャープ株式会社 | 反射型液晶表示装置の製造方法 |
CA2084247A1 (en) | 1992-03-18 | 1993-09-19 | Francis Paul Fehlner | Lcd panel production |
US6022458A (en) * | 1992-12-07 | 2000-02-08 | Canon Kabushiki Kaisha | Method of production of a semiconductor substrate |
US5406850A (en) * | 1993-01-14 | 1995-04-18 | Tosoh Smd, Inc. | Method of non-destructively testing a sputtering target |
KR100327716B1 (ko) | 1994-01-11 | 2002-06-27 | 노만 에이취. 폰드 | 진공처리시스템및진공처리시스템내에서의기판조작방법 |
US5738767A (en) * | 1994-01-11 | 1998-04-14 | Intevac, Inc. | Substrate handling and processing system for flat panel displays |
DE69531654T2 (de) * | 1994-06-15 | 2004-07-29 | Seiko Epson Corp. | Verfahren zur herstellung eines dünnschicht-halbleiter-transistors |
US5651865A (en) * | 1994-06-17 | 1997-07-29 | Eni | Preferential sputtering of insulators from conductive targets |
CA2128398C (en) * | 1994-07-19 | 2007-02-06 | John Sulzer | Process and apparatus for casting metal strip and injector used therefor |
US5559614A (en) * | 1995-05-01 | 1996-09-24 | Motorola, Inc. | Liquid crystal display with integral heater and method of fabricating same |
JP3390579B2 (ja) * | 1995-07-03 | 2003-03-24 | アネルバ株式会社 | 液晶ディスプレイ用薄膜の作成方法及び作成装置 |
US5804730A (en) * | 1995-10-10 | 1998-09-08 | Pfannenstiel; Richard A. | Ultrasonic testing method |
FR2744805B1 (fr) * | 1996-02-13 | 1998-03-20 | Pechiney Aluminium | Cibles de pulverisation cathodique selectionnees par controle ultrasons pour leur faible taux d'emissions de particules |
JPH09258247A (ja) * | 1996-03-26 | 1997-10-03 | Sharp Corp | 液晶表示装置の製造方法および成膜装置 |
US5943559A (en) * | 1997-06-23 | 1999-08-24 | Nec Corporation | Method for manufacturing liquid crystal display apparatus with drain/source silicide electrodes made by sputtering process |
US5894188A (en) * | 1997-09-17 | 1999-04-13 | Candescent Technologies Corporation | Dual-layer metal for flat panel display |
US6139701A (en) * | 1997-11-26 | 2000-10-31 | Applied Materials, Inc. | Copper target for sputter deposition |
US6001227A (en) * | 1997-11-26 | 1999-12-14 | Applied Materials, Inc. | Target for use in magnetron sputtering of aluminum for forming metallization films having low defect densities and methods for manufacturing and using such target |
US6020946A (en) * | 1998-02-23 | 2000-02-01 | International Business Machines Corporation | Dry processing for liquid-crystal displays using low energy ion bombardment |
JP4436970B2 (ja) * | 1998-06-09 | 2010-03-24 | トーソー エスエムディー,インク. | スパッターターゲット清浄度特性の定量決定のための方法と装置 |
DE69930859T2 (de) | 1998-09-11 | 2007-05-16 | Tosoh SMD, Inc., Grove City | Verbindungsverfahren für ein niedrigtemperatursputtertarget und so hergestelltes niedrigtemperatursputtertarget |
US6074455A (en) * | 1999-01-27 | 2000-06-13 | Metaullics Systems Co., L.P. | Aluminum scrap melting process and apparatus |
US6269699B1 (en) * | 1999-11-01 | 2001-08-07 | Praxair S. T. Technology, Inc. | Determination of actual defect size in cathode sputter targets subjected to ultrasonic inspection |
JP5368663B2 (ja) | 2000-04-14 | 2013-12-18 | トーソー エスエムディー,インク. | スパッターリング時の粒子状放出物を少なくするためのスパッターターゲットとそれを製造する方法 |
US20020184970A1 (en) * | 2001-12-13 | 2002-12-12 | Wickersham Charles E. | Sptutter targets and methods of manufacturing same to reduce particulate emission during sputtering |
US6739196B2 (en) | 2000-05-11 | 2004-05-25 | Tosoh Smd, Inc. | Cleanliness evaluation in sputter targets using phase |
US6439054B1 (en) * | 2000-05-31 | 2002-08-27 | Honeywell International Inc. | Methods of testing sputtering target materials |
JP4349904B2 (ja) | 2001-08-09 | 2009-10-21 | トーソー エスエムディー,インク. | 寸法と位置によって分類された欠陥の種類による、非破壊的なターゲット清浄度特性決定のための方法と装置 |
-
2002
- 2002-04-04 JP JP2002579526A patent/JP4303970B2/ja not_active Expired - Fee Related
- 2002-04-04 KR KR1020037013047A patent/KR100841915B1/ko not_active IP Right Cessation
- 2002-04-04 EP EP02719429A patent/EP1381703B1/de not_active Expired - Fee Related
- 2002-04-04 WO PCT/US2002/010516 patent/WO2002081767A2/en active Application Filing
- 2002-04-04 US US10/473,844 patent/US7087142B2/en not_active Expired - Lifetime
- 2002-04-04 DE DE60239054T patent/DE60239054D1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP4303970B2 (ja) | 2009-07-29 |
EP1381703B1 (de) | 2011-01-26 |
WO2002081767A2 (en) | 2002-10-17 |
JP2004526865A (ja) | 2004-09-02 |
US7087142B2 (en) | 2006-08-08 |
US20040118675A1 (en) | 2004-06-24 |
WO2002081767A3 (en) | 2002-12-05 |
KR20040011495A (ko) | 2004-02-05 |
EP1381703A2 (de) | 2004-01-21 |
EP1381703A4 (de) | 2008-04-09 |
KR100841915B1 (ko) | 2008-06-30 |
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