DE60232651D1 - Verdichtung der einsatzspannungs-verteilung von nichtflüchtigen speichern - Google Patents
Verdichtung der einsatzspannungs-verteilung von nichtflüchtigen speichernInfo
- Publication number
- DE60232651D1 DE60232651D1 DE60232651T DE60232651T DE60232651D1 DE 60232651 D1 DE60232651 D1 DE 60232651D1 DE 60232651 T DE60232651 T DE 60232651T DE 60232651 T DE60232651 T DE 60232651T DE 60232651 D1 DE60232651 D1 DE 60232651D1
- Authority
- DE
- Germany
- Prior art keywords
- compaction
- volatile storage
- voltage distribution
- application voltage
- application
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
- G11C16/3409—Circuits or methods to recover overerased nonvolatile memory cells detected during erase verification, usually by means of a "soft" programming step
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/851,773 US6438037B1 (en) | 2001-05-09 | 2001-05-09 | Threshold voltage compacting for non-volatile semiconductor memory designs |
PCT/US2002/004784 WO2002091387A1 (en) | 2001-05-09 | 2002-02-19 | Threshold voltage compacting for non-volatile semiconductor memory designs |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60232651D1 true DE60232651D1 (de) | 2009-07-30 |
Family
ID=25311644
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60232651T Expired - Lifetime DE60232651D1 (de) | 2001-05-09 | 2002-02-19 | Verdichtung der einsatzspannungs-verteilung von nichtflüchtigen speichern |
Country Status (5)
Country | Link |
---|---|
US (1) | US6438037B1 (de) |
EP (1) | EP1386323B1 (de) |
DE (1) | DE60232651D1 (de) |
TW (1) | TW556196B (de) |
WO (1) | WO2002091387A1 (de) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI259952B (en) * | 2002-01-31 | 2006-08-11 | Macronix Int Co Ltd | Data erase method of flash memory |
US6661711B2 (en) * | 2002-02-06 | 2003-12-09 | Sandisk Corporation | Implementation of an inhibit during soft programming to tighten an erase voltage distribution |
US7009889B2 (en) | 2004-05-28 | 2006-03-07 | Sandisk Corporation | Comprehensive erase verification for non-volatile memory |
US7230851B2 (en) * | 2004-12-23 | 2007-06-12 | Sandisk Corporation | Reducing floating gate to floating gate coupling effect |
CN1838323A (zh) * | 2005-01-19 | 2006-09-27 | 赛芬半导体有限公司 | 可预防固定模式编程的方法 |
US7345918B2 (en) | 2005-08-31 | 2008-03-18 | Micron Technology, Inc. | Selective threshold voltage verification and compaction |
US7483311B2 (en) * | 2006-02-07 | 2009-01-27 | Micron Technology, Inc. | Erase operation in a flash memory device |
DE602006009662D1 (de) * | 2006-08-24 | 2009-11-19 | St Microelectronics Srl | Verfahren zur Einengung der Schwellspannungsverteilung gelöschter Flash-Speicherzellen während Schreiboperationen |
KR100841980B1 (ko) * | 2006-12-19 | 2008-06-27 | 삼성전자주식회사 | 소거된 셀의 산포를 개선할 수 있는 플래시 메모리 장치의소거 방법 |
US7616495B2 (en) * | 2007-02-20 | 2009-11-10 | Sandisk Corporation | Non-volatile storage apparatus with variable initial program voltage magnitude |
US7986553B2 (en) * | 2007-06-15 | 2011-07-26 | Micron Technology, Inc. | Programming of a solid state memory utilizing analog communication of bit patterns |
US7830718B2 (en) * | 2007-11-21 | 2010-11-09 | Micron Technology, Inc. | Mitigation of data corruption from back pattern and program disturb in a non-volatile memory device |
US7852680B2 (en) * | 2008-01-22 | 2010-12-14 | Macronix International Co., Ltd. | Operating method of multi-level memory cell |
US8482978B1 (en) * | 2008-09-14 | 2013-07-09 | Apple Inc. | Estimation of memory cell read thresholds by sampling inside programming level distribution intervals |
JP5316299B2 (ja) * | 2009-08-07 | 2013-10-16 | 富士通セミコンダクター株式会社 | 半導体メモリ、システムおよび半導体メモリの動作方法 |
US8385123B2 (en) | 2010-08-18 | 2013-02-26 | Micron Technology, Inc. | Programming to mitigate memory cell performance differences |
US9542518B2 (en) * | 2014-11-17 | 2017-01-10 | Qualcomm Incorporated | User experience based management technique for mobile system-on-chips |
US10109356B2 (en) * | 2015-02-25 | 2018-10-23 | Nxp Usa, Inc. | Method and apparatus for stressing a non-volatile memory |
US9711211B2 (en) | 2015-10-29 | 2017-07-18 | Sandisk Technologies Llc | Dynamic threshold voltage compaction for non-volatile memory |
US20210104280A1 (en) * | 2019-10-04 | 2021-04-08 | Sandisk Technologies Llc | Method of reducing neighboring word-line interference |
US11183255B1 (en) | 2020-07-09 | 2021-11-23 | Stmicroelectronics S.R.L. | Methods and devices for erasing non-volatile memory |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5132935A (en) * | 1990-04-16 | 1992-07-21 | Ashmore Jr Benjamin H | Erasure of eeprom memory arrays to prevent over-erased cells |
US5467306A (en) * | 1993-10-04 | 1995-11-14 | Texas Instruments Incorporated | Method of using source bias to increase threshold voltages and/or to correct for over-erasure of flash eproms |
US5576992A (en) * | 1995-08-30 | 1996-11-19 | Texas Instruments Incorporated | Extended-life method for soft-programming floating-gate memory cells |
US5608672A (en) * | 1995-09-26 | 1997-03-04 | Advanced Micro Devices, Inc. | Correction method leading to a uniform threshold voltage distribution for a flash eprom |
US5748538A (en) * | 1996-06-17 | 1998-05-05 | Aplus Integrated Circuits, Inc. | OR-plane memory cell array for flash memory with bit-based write capability, and methods for programming and erasing the memory cell array |
JP3569185B2 (ja) * | 1999-12-24 | 2004-09-22 | Necエレクトロニクス株式会社 | 不揮発性半導体記憶装置 |
US6252803B1 (en) * | 2000-10-23 | 2001-06-26 | Advanced Micro Devices, Inc. | Automatic program disturb with intelligent soft programming for flash cells |
-
2001
- 2001-05-09 US US09/851,773 patent/US6438037B1/en not_active Expired - Lifetime
-
2002
- 2002-02-19 EP EP02709575A patent/EP1386323B1/de not_active Expired - Lifetime
- 2002-02-19 DE DE60232651T patent/DE60232651D1/de not_active Expired - Lifetime
- 2002-02-19 WO PCT/US2002/004784 patent/WO2002091387A1/en not_active Application Discontinuation
- 2002-04-03 TW TW091106691A patent/TW556196B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
WO2002091387A1 (en) | 2002-11-14 |
TW556196B (en) | 2003-10-01 |
EP1386323B1 (de) | 2009-06-17 |
EP1386323A1 (de) | 2004-02-04 |
US6438037B1 (en) | 2002-08-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |