DE602006009662D1 - Verfahren zur Einengung der Schwellspannungsverteilung gelöschter Flash-Speicherzellen während Schreiboperationen - Google Patents

Verfahren zur Einengung der Schwellspannungsverteilung gelöschter Flash-Speicherzellen während Schreiboperationen

Info

Publication number
DE602006009662D1
DE602006009662D1 DE602006009662T DE602006009662T DE602006009662D1 DE 602006009662 D1 DE602006009662 D1 DE 602006009662D1 DE 602006009662 T DE602006009662 T DE 602006009662T DE 602006009662 T DE602006009662 T DE 602006009662T DE 602006009662 D1 DE602006009662 D1 DE 602006009662D1
Authority
DE
Germany
Prior art keywords
narrowing
flash memory
memory cells
threshold voltage
voltage distribution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602006009662T
Other languages
English (en)
Inventor
Rino Micheloni
Luca Crippa
Roberto Ravasio
Federico Pio
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
SK Hynix Inc
Original Assignee
STMicroelectronics SRL
Hynix Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL, Hynix Semiconductor Inc filed Critical STMicroelectronics SRL
Publication of DE602006009662D1 publication Critical patent/DE602006009662D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
DE602006009662T 2006-08-24 2006-08-24 Verfahren zur Einengung der Schwellspannungsverteilung gelöschter Flash-Speicherzellen während Schreiboperationen Active DE602006009662D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP06119452A EP1909290B1 (de) 2006-08-24 2006-08-24 Verfahren zur Einengung der Schwellspannungsverteilung gelöschter Flash-Speicherzellen während Schreiboperationen

Publications (1)

Publication Number Publication Date
DE602006009662D1 true DE602006009662D1 (de) 2009-11-19

Family

ID=37602996

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602006009662T Active DE602006009662D1 (de) 2006-08-24 2006-08-24 Verfahren zur Einengung der Schwellspannungsverteilung gelöschter Flash-Speicherzellen während Schreiboperationen

Country Status (3)

Country Link
US (1) US7529136B2 (de)
EP (1) EP1909290B1 (de)
DE (1) DE602006009662D1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7376013B2 (en) * 2005-09-29 2008-05-20 Virage Logic Corp. Compact virtual ground diffusion programmable ROM array architecture, system and method
JP2009301607A (ja) * 2008-06-10 2009-12-24 Toshiba Corp 不揮発性半導体記憶装置およびその制御方法
KR101605827B1 (ko) * 2009-08-24 2016-03-23 삼성전자주식회사 불휘발성 메모리 장치, 그것의 프로그램 방법, 그리고 그것을 포함하는 메모리 시스템
KR101617810B1 (ko) * 2009-08-24 2016-05-03 삼성전자주식회사 불휘발성 메모리 장치, 그것의 프로그램 방법, 그리고 그것을 포함하는 메모리 시스템
US8917559B2 (en) 2012-04-04 2014-12-23 Sandisk Technologies Inc. Multiple write operations without intervening erase

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69217738T2 (de) * 1991-06-27 1997-07-24 Toshiba Kawasaki Kk Permanenter Halbleiterspeicher und seine Arbeitsweise
US6381670B1 (en) 1997-01-07 2002-04-30 Aplus Flash Technology, Inc. Flash memory array having maximum and minimum threshold voltage detection for eliminating over-erasure problem and enhancing write operation
US6438037B1 (en) * 2001-05-09 2002-08-20 Advanced Micro Devices, Inc. Threshold voltage compacting for non-volatile semiconductor memory designs
US6836435B2 (en) * 2002-12-13 2004-12-28 Freescale Semiconductor, Inc. Compaction scheme in NVM
US7173852B2 (en) * 2003-10-03 2007-02-06 Sandisk Corporation Corrected data storage and handling methods
US7251158B2 (en) * 2004-06-10 2007-07-31 Spansion Llc Erase algorithm for multi-level bit flash memory

Also Published As

Publication number Publication date
EP1909290A1 (de) 2008-04-09
US7529136B2 (en) 2009-05-05
US20080049521A1 (en) 2008-02-28
EP1909290B1 (de) 2009-10-07

Similar Documents

Publication Publication Date Title
DE602005012625D1 (de) Verfahren zum Zugreifen auf eine nichtflüchtige Mehrpegelspeichervorrichtung vom Typ FLASH NAND
EP2135253A4 (de) Partialblock-löscharchitektur für flash-speicher
TWI368223B (en) Flash memory data writing method and controller using the same
GB2431027B (en) Method of improving erase voltage distribution for a flash memory array having dummy wordlines
ZA200702598B (en) Method of using flash memory for storing metering data
GB2430291B (en) Erase algorithum multi-level bit flash memory
DE602007002041D1 (de) Nichtflüchtige Speichervorrichtung und Verfahren zum Betreiben derselben
TWI373048B (en) Erasing flash memory using adaptive drain and/or gate bias and related erase method
DE60303511D1 (de) Verfahren zum löschen eines flash-speichers unter verwendung eines prä-lösch verfahrensschritts
HK1203102A1 (en) Flash memory program inhibit scheme
DE602007007400D1 (de) Verfahren zur Niveauregulierung
EP2064707A4 (de) Flash-mehrwertschwellenverteilungsverfahren
DE112007002405B8 (de) Verfahren zum Ausspülen von Wasser aus einem Brennstoffzellensystem
ATE539171T1 (de) Verfahren zur voraussage der antwort auf behandlung mit einem her-dimerisierung inhibitor
DE102007006307A8 (de) Verfahren zum Betreiben eines nichtflüchtigen Speicherelements, Aufzeichnungsmedium und nichtflüchtiges Speicherelement
DE602005022512D1 (de) Vorrichtung und Verfahren zur Datenverwaltung in einem Flash-Speicher
DE102008033511A8 (de) Verfahren zum Programmieren eines Flashspeichers, Flashspeicher und Flashspeichersystem
TWI340387B (en) Flash memory controller utilizing multiple voltages and a method of use
DE502006004342D1 (de) Verfahren zum erkennen von eigenschaften einer luftfilterpatrone
WO2008050337A3 (en) Erase history-based flash writing method
DE602006009662D1 (de) Verfahren zur Einengung der Schwellspannungsverteilung gelöschter Flash-Speicherzellen während Schreiboperationen
EP1999756A4 (de) Nichtflüchtiger speicher mit gesteuerter programmierung/löschung
DE602007008201D1 (de) Verfahren zur qualitätskontrolle von speichermedien
DE602007003957D1 (de) Verfahren zur verbesserten spiralenschrift vor ort
HK1087832A1 (en) Method for increasing speed of writing data into flash memory disk

Legal Events

Date Code Title Description
8364 No opposition during term of opposition