DE60229864D1 - Magnetspeichereinrichtung und aufzeichnungssteuerverfahren dafür - Google Patents

Magnetspeichereinrichtung und aufzeichnungssteuerverfahren dafür

Info

Publication number
DE60229864D1
DE60229864D1 DE60229864T DE60229864T DE60229864D1 DE 60229864 D1 DE60229864 D1 DE 60229864D1 DE 60229864 T DE60229864 T DE 60229864T DE 60229864 T DE60229864 T DE 60229864T DE 60229864 D1 DE60229864 D1 DE 60229864D1
Authority
DE
Germany
Prior art keywords
memory device
control method
magnetic memory
method therefor
record control
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60229864T
Other languages
English (en)
Inventor
Kazuhiro Bessho
Hiroshi Kano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of DE60229864D1 publication Critical patent/DE60229864D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1655—Bit-line or column circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
  • Hall/Mr Elements (AREA)
DE60229864T 2001-09-18 2002-09-18 Magnetspeichereinrichtung und aufzeichnungssteuerverfahren dafür Expired - Lifetime DE60229864D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001283153A JP2003091987A (ja) 2001-09-18 2001-09-18 磁気メモリ装置及びその記録制御方法
PCT/JP2002/009579 WO2003025943A1 (fr) 2001-09-18 2002-09-18 Support de memoire magnetique et procede de commande d'enregistrement associe

Publications (1)

Publication Number Publication Date
DE60229864D1 true DE60229864D1 (de) 2008-12-24

Family

ID=19106691

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60229864T Expired - Lifetime DE60229864D1 (de) 2001-09-18 2002-09-18 Magnetspeichereinrichtung und aufzeichnungssteuerverfahren dafür

Country Status (6)

Country Link
US (1) US7142474B2 (de)
EP (1) EP1429341B1 (de)
JP (1) JP2003091987A (de)
KR (1) KR100862322B1 (de)
DE (1) DE60229864D1 (de)
WO (1) WO2003025943A1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050105328A1 (en) * 2003-11-17 2005-05-19 Ho Chiahua Perpendicular MRAM with high magnetic transition and low programming current
US7283384B1 (en) * 2004-03-24 2007-10-16 Silicon Magnetic Systems Magnetic memory array architecture
KR100568542B1 (ko) 2004-08-19 2006-04-07 삼성전자주식회사 자기 램 소자의 기록방법
US7330336B2 (en) * 2006-05-22 2008-02-12 Hitachi Global Storage Technologies Netherlands B. V. Dual polarity bias for prolonging the life of a heating element in magnetic data storage devices

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3977576B2 (ja) * 1999-09-17 2007-09-19 株式会社東芝 磁気メモリ装置
US6169689B1 (en) * 1999-12-08 2001-01-02 Motorola, Inc. MTJ stacked cell memory sensing method and apparatus
US6215707B1 (en) * 2000-04-10 2001-04-10 Motorola Inc. Charge conserving write method and system for an MRAM
DE10032278C1 (de) * 2000-07-03 2001-11-29 Infineon Technologies Ag Verfahren zur Verhinderung von Elektromigration in einem MRAM
US6236590B1 (en) * 2000-07-21 2001-05-22 Hewlett-Packard Company Optimal write conductors layout for improved performance in MRAM
JP3920564B2 (ja) * 2000-12-25 2007-05-30 株式会社東芝 磁気ランダムアクセスメモリ
US6522579B2 (en) * 2001-01-24 2003-02-18 Infineon Technologies, Ag Non-orthogonal MRAM device
JP2002334972A (ja) * 2001-05-10 2002-11-22 Sony Corp 磁気メモリ装置
US6750491B2 (en) * 2001-12-20 2004-06-15 Hewlett-Packard Development Company, L.P. Magnetic memory device having soft reference layer
JP3808799B2 (ja) * 2002-05-15 2006-08-16 株式会社東芝 磁気ランダムアクセスメモリ
US6667899B1 (en) * 2003-03-27 2003-12-23 Motorola, Inc. Magnetic memory and method of bi-directional write current programming

Also Published As

Publication number Publication date
JP2003091987A (ja) 2003-03-28
US20040233755A1 (en) 2004-11-25
EP1429341B1 (de) 2008-11-12
EP1429341A4 (de) 2007-07-18
KR20040029181A (ko) 2004-04-03
EP1429341A1 (de) 2004-06-16
WO2003025943A1 (fr) 2003-03-27
US7142474B2 (en) 2006-11-28
KR100862322B1 (ko) 2008-10-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition