DE60223052D1 - Farbbildsensor mit verbesserter kalorimetrie und verfahren zu seiner herstellung - Google Patents

Farbbildsensor mit verbesserter kalorimetrie und verfahren zu seiner herstellung

Info

Publication number
DE60223052D1
DE60223052D1 DE60223052T DE60223052T DE60223052D1 DE 60223052 D1 DE60223052 D1 DE 60223052D1 DE 60223052 T DE60223052 T DE 60223052T DE 60223052 T DE60223052 T DE 60223052T DE 60223052 D1 DE60223052 D1 DE 60223052D1
Authority
DE
Germany
Prior art keywords
production
image sensor
color image
calorimetry
improved
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60223052T
Other languages
English (en)
Other versions
DE60223052T2 (de
Inventor
Eric Pourquier
Louis Brissot
Gilles Simon
Alain Jutant
Philippe Rommeveaux
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Teledyne e2v Semiconductors SAS
Original Assignee
e2v Semiconductors SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by e2v Semiconductors SAS filed Critical e2v Semiconductors SAS
Publication of DE60223052D1 publication Critical patent/DE60223052D1/de
Application granted granted Critical
Publication of DE60223052T2 publication Critical patent/DE60223052T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14665—Imagers using a photoconductor layer
    • H01L27/14667—Colour imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1464—Back illuminated imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14645—Colour imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
DE60223052T 2001-08-31 2002-08-30 Farbbildsensor mit verbesserter kalorimetrie und verfahren zu seiner herstellung Expired - Lifetime DE60223052T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0111334 2001-08-31
FR0111334A FR2829289B1 (fr) 2001-08-31 2001-08-31 Capteur d'image couleur a colorimetrie amelioree et procede de fabrication
PCT/FR2002/002978 WO2003019668A1 (fr) 2001-08-31 2002-08-30 Capteur d'image couleur a colorimetrie amelioree et procede de fabrication

Publications (2)

Publication Number Publication Date
DE60223052D1 true DE60223052D1 (de) 2007-11-29
DE60223052T2 DE60223052T2 (de) 2008-07-24

Family

ID=8866877

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60223052T Expired - Lifetime DE60223052T2 (de) 2001-08-31 2002-08-30 Farbbildsensor mit verbesserter kalorimetrie und verfahren zu seiner herstellung

Country Status (6)

Country Link
US (1) US7217590B2 (de)
EP (1) EP1421623B1 (de)
JP (1) JP4064347B2 (de)
DE (1) DE60223052T2 (de)
FR (1) FR2829289B1 (de)
WO (1) WO2003019668A1 (de)

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* Cited by examiner, † Cited by third party
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FR2863773B1 (fr) * 2003-12-12 2006-05-19 Atmel Grenoble Sa Procede de fabrication de puces electroniques en silicium aminci
JP4720120B2 (ja) * 2004-07-14 2011-07-13 ソニー株式会社 半導体イメージセンサ・モジュール
FR2880194B1 (fr) * 2004-12-24 2007-06-01 Atmel Grenoble Soc Par Actions Capteur d'image a zones de couleur globalement separees
JP4486043B2 (ja) * 2004-12-30 2010-06-23 東部エレクトロニクス株式会社 Ｃｍｏｓイメージセンサー及びその製造方法
KR100672994B1 (ko) * 2005-01-28 2007-01-24 삼성전자주식회사 이미지 센서 및 그 제조 방법
JP4641820B2 (ja) 2005-02-17 2011-03-02 三洋電機株式会社 半導体装置の製造方法
JP4940667B2 (ja) * 2005-06-02 2012-05-30 ソニー株式会社 固体撮像素子及びその製造方法
US8049293B2 (en) 2005-03-07 2011-11-01 Sony Corporation Solid-state image pickup device, electronic apparatus using such solid-state image pickup device and method of manufacturing solid-state image pickup device
WO2006134740A1 (ja) * 2005-06-17 2006-12-21 Toppan Printing Co., Ltd. 撮像素子
US7586139B2 (en) * 2006-02-17 2009-09-08 International Business Machines Corporation Photo-sensor and pixel array with backside illumination and method of forming the photo-sensor
US7709872B2 (en) * 2006-09-13 2010-05-04 Taiwan Semiconductor Manufacturing Co., Ltd. Methods for fabricating image sensor devices
JP5159192B2 (ja) * 2007-07-06 2013-03-06 株式会社東芝 半導体装置の製造方法
US20090068784A1 (en) * 2007-09-10 2009-03-12 Seoung Hyun Kim Method for Manufacturing of the Image Sensor
DE102009000001B4 (de) 2009-01-02 2019-01-24 Robert Bosch Gmbh Bildsensor und Verfahren zur Herstellung eines Bildsensors
JP2010177391A (ja) * 2009-01-29 2010-08-12 Sony Corp 固体撮像装置、電子機器、固体撮像装置の製造方法
KR20110055980A (ko) 2009-11-20 2011-05-26 주식회사 하이닉스반도체 리버스 이미지 센서 모듈 및 이의 제조 방법
JP2011077553A (ja) * 2011-01-05 2011-04-14 Sony Corp 半導体イメージセンサ・モジュールおよび半導体イメージセンサ・モジュールの製造方法
JP2011077554A (ja) * 2011-01-05 2011-04-14 Sony Corp 半導体イメージセンサ・モジュールおよび半導体イメージセンサ・モジュールの製造方法
JP2011077555A (ja) * 2011-01-05 2011-04-14 Sony Corp 半導体イメージセンサ・モジュールおよび半導体イメージセンサ・モジュールの製造方法
JP5429208B2 (ja) * 2011-02-09 2014-02-26 ソニー株式会社 固体撮像素子、カメラモジュール及び電子機器モジュール
US9099623B2 (en) 2013-08-30 2015-08-04 Taiwan Semiconductor Manufacturing Company, Ltd. Manufacture including substrate and package structure of optical chip
US9419156B2 (en) * 2013-08-30 2016-08-16 Taiwan Semiconductor Manufacturing Co., Ltd. Package and method for integration of heterogeneous integrated circuits
US10985204B2 (en) * 2016-02-16 2021-04-20 G-Ray Switzerland Sa Structures, systems and methods for electrical charge transport across bonded interfaces
JP2017183407A (ja) * 2016-03-29 2017-10-05 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US10250258B2 (en) * 2016-09-28 2019-04-02 Nxp B.V. Device and method for detecting semiconductor substrate thickness

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2501943B1 (fr) * 1981-03-13 1986-01-17 Thomson Csf Dispositif photosensible solide a deux dimensions et dispositif d'analyse d'image, utilisant le transfert de charges electriques, comportant un tel dispositif
JPH05183141A (ja) * 1991-07-12 1993-07-23 Fuji Xerox Co Ltd カラーイメージセンサ
US5244817A (en) * 1992-08-03 1993-09-14 Eastman Kodak Company Method of making backside illuminated image sensors
US6059188A (en) * 1993-10-25 2000-05-09 Symbol Technologies Packaged mirror including mirror travel stops
US5568574A (en) * 1995-06-12 1996-10-22 University Of Southern California Modulator-based photonic chip-to-chip interconnections for dense three-dimensional multichip module integration
US6091194A (en) * 1995-11-22 2000-07-18 Motorola, Inc. Active matrix display
US6252220B1 (en) * 1999-04-26 2001-06-26 Xerox Corporation Sensor cover glass with infrared filter

Also Published As

Publication number Publication date
JP2005501421A (ja) 2005-01-13
EP1421623A1 (de) 2004-05-26
FR2829289A1 (fr) 2003-03-07
US20040251477A1 (en) 2004-12-16
DE60223052T2 (de) 2008-07-24
WO2003019668A1 (fr) 2003-03-06
JP4064347B2 (ja) 2008-03-19
US7217590B2 (en) 2007-05-15
FR2829289B1 (fr) 2004-11-19
EP1421623B1 (de) 2007-10-17

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Legal Events

Date Code Title Description
8381 Inventor (new situation)

Inventor name: POURQUIER, ERIC, ARCUEIL CEDEX, FR

Inventor name: BRISSOT, LOUIS, ARCUEIL CEDEX, FR

Inventor name: SIMON, GILLES, ARCUEIL CEDEX, FR

Inventor name: JUTANT, ALAIN, ARCUEIL CEDEX, FR

Inventor name: ROMMEVEAUX, PHILIPPE, ARCUEIL CEDEX, FR

8364 No opposition during term of opposition