DE60220183D1 - Verfahren zur herstellung von partikeln mit diamant -struktur - Google Patents

Verfahren zur herstellung von partikeln mit diamant -struktur

Info

Publication number
DE60220183D1
DE60220183D1 DE60220183T DE60220183T DE60220183D1 DE 60220183 D1 DE60220183 D1 DE 60220183D1 DE 60220183 T DE60220183 T DE 60220183T DE 60220183 T DE60220183 T DE 60220183T DE 60220183 D1 DE60220183 D1 DE 60220183D1
Authority
DE
Germany
Prior art keywords
diamond structure
particles
producing particles
plasma
growing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60220183T
Other languages
English (en)
Other versions
DE60220183T2 (de
Inventor
Volker Dose
Gregor Morfill
Vladimir Fortov
Noriyoshi Sato
Yukio Watanabe
Hubertus M Thomas
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Max Planck Gesellschaft zur Foerderung der Wissenschaften eV
Original Assignee
Max Planck Gesellschaft zur Foerderung der Wissenschaften eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Max Planck Gesellschaft zur Foerderung der Wissenschaften eV filed Critical Max Planck Gesellschaft zur Foerderung der Wissenschaften eV
Publication of DE60220183D1 publication Critical patent/DE60220183D1/de
Application granted granted Critical
Publication of DE60220183T2 publication Critical patent/DE60220183T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
    • C30B30/08—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions in conditions of zero-gravity or low gravity
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4417—Methods specially adapted for coating powder
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
DE60220183T 2001-12-20 2002-11-22 Verfahren zur herstellung von partikeln mit diamant -struktur Expired - Fee Related DE60220183T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP01130453 2001-12-20
EP01130453A EP1321545A1 (de) 2001-12-20 2001-12-20 Verfahren zur Herstellung von Teilchen mit Diamantstruktur
PCT/EP2002/013160 WO2003054257A1 (en) 2001-12-20 2002-11-22 Method for producing particles with diamond structure

Publications (2)

Publication Number Publication Date
DE60220183D1 true DE60220183D1 (de) 2007-06-28
DE60220183T2 DE60220183T2 (de) 2008-02-21

Family

ID=8179623

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60220183T Expired - Fee Related DE60220183T2 (de) 2001-12-20 2002-11-22 Verfahren zur herstellung von partikeln mit diamant -struktur

Country Status (7)

Country Link
US (1) US20050147765A1 (de)
EP (2) EP1321545A1 (de)
AT (1) ATE362557T1 (de)
AU (1) AU2002342921A1 (de)
DE (1) DE60220183T2 (de)
RU (1) RU2312175C2 (de)
WO (1) WO2003054257A1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL1020059C2 (nl) * 2002-02-21 2003-08-25 Corus Technology B V Werkwijze en inrichting voor het bekleden van een substraat.
US10005672B2 (en) * 2010-04-14 2018-06-26 Baker Hughes, A Ge Company, Llc Method of forming particles comprising carbon and articles therefrom
US9205531B2 (en) 2011-09-16 2015-12-08 Baker Hughes Incorporated Methods of fabricating polycrystalline diamond, and cutting elements and earth-boring tools comprising polycrystalline diamond
WO2013040362A2 (en) 2011-09-16 2013-03-21 Baker Hughes Incorporated Methods of fabricating polycrystalline diamond, and cutting elements and earth-boring tools comprising polycrystalline diamond
FR2995999B1 (fr) * 2012-09-27 2014-10-17 Centre Nat Rech Scient Methode et systeme de detection et/ou d'analyse de particules dans un plasma froid
US20210310117A1 (en) * 2018-08-13 2021-10-07 Cemvita Factory, Inc. Methods and systems for producing structured carbon materials in a microgravity environment
CN110616459A (zh) * 2019-10-31 2019-12-27 北京大学东莞光电研究院 一种大颗粒金刚石的制备装置及其制备方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5015528A (en) * 1987-03-30 1991-05-14 Crystallume Fluidized bed diamond particle growth
US4859493A (en) * 1987-03-31 1989-08-22 Lemelson Jerome H Methods of forming synthetic diamond coatings on particles using microwaves
JPH01157497A (ja) * 1987-12-14 1989-06-20 Natl Inst For Res In Inorg Mater 粒状ダイヤモンドの製造法
JPH0288497A (ja) * 1988-06-09 1990-03-28 Toshiba Corp 単結晶ダイヤモンド粒子の製造方法
JP2639505B2 (ja) * 1988-10-20 1997-08-13 住友電気工業株式会社 粒状ダイヤモンドの合成方法
JPH02265637A (ja) * 1989-04-06 1990-10-30 Kobe Steel Ltd ダイヤモンドの合成方法
US5087434A (en) * 1989-04-21 1992-02-11 The Pennsylvania Research Corporation Synthesis of diamond powders in the gas phase
CA2019941C (en) * 1989-07-13 1994-01-25 Toshio Abe Electrostatic levitation furnace
US5704976A (en) * 1990-07-06 1998-01-06 The United States Of America As Represented By The Secretary Of The Navy High temperature, high rate, epitaxial synthesis of diamond in a laminar plasma
US5470661A (en) * 1993-01-07 1995-11-28 International Business Machines Corporation Diamond-like carbon films from a hydrocarbon helium plasma
JP3728465B2 (ja) * 1994-11-25 2005-12-21 株式会社神戸製鋼所 単結晶ダイヤモンド膜の形成方法
JP3824675B2 (ja) * 1995-03-03 2006-09-20 有限会社デジタル・ウェーブ 結晶製造装置
JP4340348B2 (ja) * 1998-01-22 2009-10-07 株式会社日立国際電気 プラズマ生成装置

Also Published As

Publication number Publication date
WO2003054257A1 (en) 2003-07-03
ATE362557T1 (de) 2007-06-15
EP1456436B1 (de) 2007-05-16
EP1321545A1 (de) 2003-06-25
EP1456436A1 (de) 2004-09-15
RU2312175C2 (ru) 2007-12-10
AU2002342921A1 (en) 2003-07-09
US20050147765A1 (en) 2005-07-07
RU2004122127A (ru) 2005-03-20
DE60220183T2 (de) 2008-02-21

Similar Documents

Publication Publication Date Title
WO2005124827A3 (en) Improved method and apparatus for the etching of microstructures
ATE240263T1 (de) Verfahren und vorrichtung zur herstellung von fullerenen
EP1047097A4 (de) Elektronenemittierende vorrichtung,elektronenemittierende quelle,bildanzeigegerät und herstellungsverfahren dafür
EP1207425A3 (de) Belichtungsapparat und Wartungsverfahren
TWI318242B (en) Thin film deposition apparatus and thin film deposition method
MXPA00006908A (es) Pelicula de poliester orientada biaxialmente, blanca, con copolimero de cicloolefina (coc), procedimiento para producir la pelicula y su uso.
DE60230596D1 (de) Verfahren und vorrichtung zur herstellung von kohlenstoffnanoröhren
DE69013174D1 (de) Verfahren zur Herstellung von selbsttragenden Körpern und so erhaltene Produkte.
HK1068112A1 (en) Method of forming an optical tools
ATE362557T1 (de) Verfahren zur herstellung von partikeln mit diamant -struktur
GB2355992A (en) Method and apparatus for forming a film on a substrate
KR100897457B1 (ko) 탁수스종의세포배양에의한탁산의생산증진방법
DE602004025591D1 (de) Verfahren zur herstellung zytotoxischer lymphozyten
AU2003232815A1 (en) Amorphous solid modification of bis(2,4-dicumylphenyl) pentaerythritol diphosphite
ATE307779T1 (de) Verfahren und vorrichtung zur herstellung von fullerenhaltigem wasser
EP0891702A4 (de)
DE60101582D1 (de) Beschichtigungsklinge und verfahren zur herstellung
EP1484293A4 (de) Verfahren zur herstellung eines transparenten dünnen films, danach hergestellter transparenter dünner film und transparentes substrat mit transparentem dünnem film
EP1158077A4 (de) Verfahren und vorrichtung zur herstellung von einkristallen aus siliziumkarbid
CA2352985A1 (fr) Couche monoatomique et monocristalline de grande taille, en carbone de type diamant, et procede de fabrication de cette couche
TWI262969B (en) Method for growth of silicon carbide single crystal, silicon carbide seed crystal, and silicon carbide single crystal
ATE289584T1 (de) Verfahren zur herstellung von diazomethan
ATE321157T1 (de) Magnetfeldofen und betriebsverfahren zur herstellung von bandförmigen dendritischen kristallen
DE69803283T2 (de) Verfahren zur herstellung von siliziumkarbidkristall mit geringem widerstand
WO2003054506A3 (en) Deuterium-based chemiluminescent 1,2-dioxetanes

Legal Events

Date Code Title Description
8332 No legal effect for de
8370 Indication related to discontinuation of the patent is to be deleted
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee