DE60214159D1 - Methode zur entfernung von oxiden auf kupferanschlussflächen - Google Patents

Methode zur entfernung von oxiden auf kupferanschlussflächen

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Publication number
DE60214159D1
DE60214159D1 DE60214159T DE60214159T DE60214159D1 DE 60214159 D1 DE60214159 D1 DE 60214159D1 DE 60214159 T DE60214159 T DE 60214159T DE 60214159 T DE60214159 T DE 60214159T DE 60214159 D1 DE60214159 D1 DE 60214159D1
Authority
DE
Germany
Prior art keywords
connection plates
copper connection
removing oxides
oxides
copper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60214159T
Other languages
English (en)
Other versions
DE60214159T2 (de
Inventor
Wai Mui
Bte Harun
Chu Tan
Nor Faizairi Mohd
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
Freescale Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Publication of DE60214159D1 publication Critical patent/DE60214159D1/de
Application granted granted Critical
Publication of DE60214159T2 publication Critical patent/DE60214159T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • General Physics & Mathematics (AREA)
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  • Wire Bonding (AREA)
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  • Cleaning Or Drying Semiconductors (AREA)
DE60214159T 2001-03-12 2002-02-08 Methode zur entfernung von oxiden auf kupferanschlussflächen Expired - Lifetime DE60214159T2 (de)

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US6720204B2 (en) * 2002-04-11 2004-04-13 Chartered Semiconductor Manufacturing Ltd. Method of using hydrogen plasma to pre-clean copper surfaces during Cu/Cu or Cu/metal bonding
US7328830B2 (en) * 2002-12-20 2008-02-12 Agere Systems Inc. Structure and method for bonding to copper interconnect structures
MY134318A (en) * 2003-04-02 2007-12-31 Freescale Semiconductor Inc Integrated circuit die having a copper contact and method therefor
DE10320472A1 (de) * 2003-05-08 2004-12-02 Kolektor D.O.O. Plasmabehandlung zur Reinigung von Kupfer oder Nickel
JP4036834B2 (ja) * 2004-01-21 2008-01-23 松下電器産業株式会社 マイクロポンプ用逆止弁の製造方法
US7186652B2 (en) * 2004-05-05 2007-03-06 Taiwan Semiconductor Manufacturing Co., Ltd. Method for preventing Cu contamination and oxidation in semiconductor device manufacturing
JP4035733B2 (ja) * 2005-01-19 2008-01-23 セイコーエプソン株式会社 半導体装置の製造方法及び電気的接続部の処理方法
DE102005019160B4 (de) * 2005-04-25 2007-04-05 Emag Holding Gmbh Verfahren zur Herstellung von Kugelnaben für Gleichlaufgelenke
DE102006044691B4 (de) 2006-09-22 2012-06-21 Infineon Technologies Ag Verfahren zum Herstellen einer Anschlussleitstruktur eines Bauelements
TWI370515B (en) * 2006-09-29 2012-08-11 Megica Corp Circuit component
US8414534B2 (en) * 2006-11-09 2013-04-09 Abbott Medical Optics Inc. Holding tank devices, systems, and methods for surgical fluidics cassette
US8030775B2 (en) 2007-08-27 2011-10-04 Megica Corporation Wirebond over post passivation thick metal
US20100052174A1 (en) * 2008-08-27 2010-03-04 Agere Systems Inc. Copper pad for copper wire bonding
JP6030637B2 (ja) * 2011-04-25 2016-11-24 エア プロダクツ アンド ケミカルズ インコーポレイテッドAir Products And Chemicals Incorporated ワイヤーボンディング法を改良するためのリードフレームのクリーニング
CN107845568A (zh) * 2017-10-31 2018-03-27 浙江华越芯装电子股份有限公司 一种集成电路封装键合前等离子清洗方法及装置
CN113488399B (zh) 2021-06-15 2021-12-21 广东工业大学 一种超细节距半导体互连结构及其成型方法

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US4764244A (en) * 1985-06-11 1988-08-16 The Foxboro Company Resonant sensor and method of making same
JPH02101156A (ja) 1988-10-05 1990-04-12 Fujikura Ltd 真空蒸着用銅基材の製造方法
US5246782A (en) * 1990-12-10 1993-09-21 The Dow Chemical Company Laminates of polymers having perfluorocyclobutane rings and polymers containing perfluorocyclobutane rings
JP3247211B2 (ja) 1993-08-02 2002-01-15 富士通株式会社 配線用銅膜表面の酸化銅除去方法
KR100295429B1 (ko) 1997-12-29 2001-10-24 윤종용 웨이퍼의포장방법
US6355571B1 (en) * 1998-11-17 2002-03-12 Applied Materials, Inc. Method and apparatus for reducing copper oxidation and contamination in a semiconductor device
US6358847B1 (en) 1999-03-31 2002-03-19 Lam Research Corporation Method for enabling conventional wire bonding to copper-based bond pad features
US6440854B1 (en) * 2001-02-02 2002-08-27 Novellus Systems, Inc. Anti-agglomeration of copper seed layers in integrated circuit metalization

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