DE60213217D1 - Verfahren zur Herstellung von lithographischen Masken - Google Patents

Verfahren zur Herstellung von lithographischen Masken

Info

Publication number
DE60213217D1
DE60213217D1 DE60213217T DE60213217T DE60213217D1 DE 60213217 D1 DE60213217 D1 DE 60213217D1 DE 60213217 T DE60213217 T DE 60213217T DE 60213217 T DE60213217 T DE 60213217T DE 60213217 D1 DE60213217 D1 DE 60213217D1
Authority
DE
Germany
Prior art keywords
preparation
lithographic masks
lithographic
masks
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60213217T
Other languages
English (en)
Other versions
DE60213217T2 (de
Inventor
Mitsuro Sugita
Kenji Yamazoe
Kenji Saitoh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE60213217D1 publication Critical patent/DE60213217D1/de
Application granted granted Critical
Publication of DE60213217T2 publication Critical patent/DE60213217T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE60213217T 2002-06-12 2002-09-20 Verfahren zur Herstellung von lithographischen Masken Expired - Lifetime DE60213217T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002171053 2002-06-12
JP2002171053A JP4235404B2 (ja) 2002-06-12 2002-06-12 マスクの製造方法

Publications (2)

Publication Number Publication Date
DE60213217D1 true DE60213217D1 (de) 2006-08-31
DE60213217T2 DE60213217T2 (de) 2007-07-19

Family

ID=29561772

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60213217T Expired - Lifetime DE60213217T2 (de) 2002-06-12 2002-09-20 Verfahren zur Herstellung von lithographischen Masken

Country Status (6)

Country Link
US (1) US6839890B2 (de)
EP (1) EP1372032B1 (de)
JP (1) JP4235404B2 (de)
KR (1) KR100529445B1 (de)
DE (1) DE60213217T2 (de)
TW (1) TW574728B (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10240403A1 (de) * 2002-09-02 2004-03-11 Infineon Technologies Ag Maske zur Projektion eines Stukturmusters auf ein Halbleitersubstrat
JP4585197B2 (ja) * 2003-12-22 2010-11-24 ルネサスエレクトロニクス株式会社 レイアウト設計方法およびフォトマスク
US7846849B2 (en) * 2007-06-01 2010-12-07 Applied Materials, Inc. Frequency tripling using spacer mask having interposed regions
JP5455438B2 (ja) * 2008-06-06 2014-03-26 株式会社東芝 マスクパターンデータ作成方法
KR20130081528A (ko) * 2012-01-09 2013-07-17 삼성디스플레이 주식회사 증착 마스크 및 이를 이용한 증착 설비
US8739078B2 (en) 2012-01-18 2014-05-27 International Business Machines Corporation Near-neighbor trimming of dummy fill shapes with built-in optical proximity corrections for semiconductor applications
KR102326120B1 (ko) * 2015-06-29 2021-11-15 삼성전자주식회사 배선 구조물 및 그 형성 방법, 및 상기 배선 구조물을 갖는 반도체 장치
CN105607411B (zh) * 2016-01-29 2019-09-10 华灿光电(苏州）有限公司 一种光刻版及应用光刻版制作发光二极管的方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5821014A (en) * 1997-02-28 1998-10-13 Microunity Systems Engineering, Inc. Optical proximity correction method for intermediate-pitch features using sub-resolution scattering bars on a mask
JPH10326006A (ja) * 1997-05-26 1998-12-08 Sony Corp パターンの形成方法
JPH117120A (ja) * 1997-06-18 1999-01-12 Sony Corp マスクパターン作成方法およびマスクパターン作成装置並びにマスク作成装置
KR100268425B1 (ko) * 1998-06-02 2000-11-01 윤종용 마스크 패턴 레이아웃 구조
JP4160203B2 (ja) * 1998-07-23 2008-10-01 株式会社東芝 マスクパターン補正方法及びマスクパターン補正プログラムを記録した記録媒体
JP3275863B2 (ja) 1999-01-08 2002-04-22 日本電気株式会社 フォトマスク
US6274281B1 (en) * 1999-12-28 2001-08-14 Taiwan Semiconductor Manufacturing Company Using different transmittance with attenuate phase shift mask (APSM) to compensate ADI critical dimension proximity
US6294295B1 (en) * 2000-03-06 2001-09-25 Taiwan Semiconductor Manufacturing Company Variable transmittance phase shifter to compensate for side lobe problem on rim type attenuating phase shifting masks
JP3669681B2 (ja) * 2000-03-31 2005-07-13 株式会社東芝 半導体装置の製造方法
JP3768794B2 (ja) 2000-10-13 2006-04-19 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法

Also Published As

Publication number Publication date
US6839890B2 (en) 2005-01-04
TW574728B (en) 2004-02-01
US20030233629A1 (en) 2003-12-18
KR100529445B1 (ko) 2005-11-17
EP1372032B1 (de) 2006-07-19
EP1372032A1 (de) 2003-12-17
DE60213217T2 (de) 2007-07-19
JP4235404B2 (ja) 2009-03-11
KR20030095944A (ko) 2003-12-24
JP2004020577A (ja) 2004-01-22

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Legal Events

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