DE602007007480D1 - Floating-gate-speicher mit kopplungskompensation während der programmierung - Google Patents

Floating-gate-speicher mit kopplungskompensation während der programmierung

Info

Publication number
DE602007007480D1
DE602007007480D1 DE602007007480T DE602007007480T DE602007007480D1 DE 602007007480 D1 DE602007007480 D1 DE 602007007480D1 DE 602007007480 T DE602007007480 T DE 602007007480T DE 602007007480 T DE602007007480 T DE 602007007480T DE 602007007480 D1 DE602007007480 D1 DE 602007007480D1
Authority
DE
Germany
Prior art keywords
adjacent
memory cell
floating gate
coupling
during programming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602007007480T
Other languages
English (en)
Inventor
Yan Li
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SanDisk Corp
Original Assignee
SanDisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/459,001 external-priority patent/US7885119B2/en
Priority claimed from US11/459,002 external-priority patent/US7400535B2/en
Application filed by SanDisk Corp filed Critical SanDisk Corp
Publication of DE602007007480D1 publication Critical patent/DE602007007480D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G11C16/3427—Circuits or methods to prevent or reduce disturbance of the state of a memory cell when neighbouring cells are read or written
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/562—Multilevel memory programming aspects
    • G11C2211/5621—Multilevel programming verification
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
DE602007007480T 2006-07-20 2007-07-18 Floating-gate-speicher mit kopplungskompensation während der programmierung Active DE602007007480D1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/459,001 US7885119B2 (en) 2006-07-20 2006-07-20 Compensating for coupling during programming
US11/459,002 US7400535B2 (en) 2006-07-20 2006-07-20 System that compensates for coupling during programming
PCT/US2007/073739 WO2008011440A2 (en) 2006-07-20 2007-07-18 Floating gate memory with compensating for coupling during programming

Publications (1)

Publication Number Publication Date
DE602007007480D1 true DE602007007480D1 (de) 2010-08-12

Family

ID=38910899

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602007007480T Active DE602007007480D1 (de) 2006-07-20 2007-07-18 Floating-gate-speicher mit kopplungskompensation während der programmierung

Country Status (7)

Country Link
EP (1) EP2047474B1 (de)
JP (1) JP4940300B2 (de)
KR (1) KR101048834B1 (de)
AT (1) ATE472803T1 (de)
DE (1) DE602007007480D1 (de)
TW (1) TWI351700B (de)
WO (1) WO2008011440A2 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101448851B1 (ko) 2008-02-26 2014-10-13 삼성전자주식회사 비휘발성 메모리 장치에서의 프로그래밍 방법
JP2009230818A (ja) * 2008-03-24 2009-10-08 Toshiba Corp 半導体記憶装置
US7967995B2 (en) * 2008-03-31 2011-06-28 Tokyo Electron Limited Multi-layer/multi-input/multi-output (MLMIMO) models and method for using
US8677056B2 (en) * 2008-07-01 2014-03-18 Lsi Corporation Methods and apparatus for interfacing between a flash memory controller and a flash memory array
JP5710475B2 (ja) * 2008-07-01 2015-04-30 エルエスアイ コーポレーション フラッシュ・メモリにおけるソフト・デマッピングおよびセル間干渉軽減のための方法および装置
JP5496198B2 (ja) * 2008-07-22 2014-05-21 エルエスアイ コーポレーション フラッシュ・メモリにおいて信号レベルごとに複数のプログラム値をプログラミングするための方法および装置
JP2010123210A (ja) * 2008-11-20 2010-06-03 Toshiba Corp 半導体記憶装置
JP2011008838A (ja) * 2009-06-23 2011-01-13 Toshiba Corp 不揮発性半導体記憶装置およびその書き込み方法
US8473809B2 (en) 2009-11-20 2013-06-25 Sandisk Technologies Inc. Data coding for improved ECC efficiency
JP2011150749A (ja) * 2010-01-20 2011-08-04 Toshiba Corp 不揮発性半導体記憶装置
JP2011198436A (ja) * 2010-03-23 2011-10-06 Toshiba Corp 半導体記憶装置
JP2011258289A (ja) * 2010-06-10 2011-12-22 Toshiba Corp メモリセルの閾値検出方法
US9009547B2 (en) 2011-01-27 2015-04-14 Apple Inc. Advanced programming verification schemes for analog memory cells
US9293194B2 (en) 2011-01-27 2016-03-22 Apple Inc. Programming and erasure schemes for analog memory cells
US8537623B2 (en) 2011-07-07 2013-09-17 Micron Technology, Inc. Devices and methods of programming memory cells
US9030870B2 (en) * 2011-08-26 2015-05-12 Micron Technology, Inc. Threshold voltage compensation in a multilevel memory
US9076547B2 (en) 2012-04-05 2015-07-07 Micron Technology, Inc. Level compensation in multilevel memory
JP2013200924A (ja) * 2012-03-26 2013-10-03 Toshiba Corp 不揮発性半導体記憶装置
US8837223B2 (en) 2011-11-21 2014-09-16 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device and method for manufacuring the same
JP2013122799A (ja) 2011-12-09 2013-06-20 Toshiba Corp 不揮発性半導体記憶装置
US9001577B2 (en) * 2012-06-01 2015-04-07 Micron Technology, Inc. Memory cell sensing
WO2015004714A1 (ja) 2013-07-08 2015-01-15 株式会社 東芝 半導体記憶装置
US9672102B2 (en) * 2014-06-25 2017-06-06 Intel Corporation NAND memory devices systems, and methods using pre-read error recovery protocols of upper and lower pages
JP2016062624A (ja) 2014-09-17 2016-04-25 株式会社東芝 半導体記憶装置
JP7532274B2 (ja) * 2021-01-29 2024-08-13 キオクシア株式会社 半導体記憶装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5220531A (en) * 1991-01-02 1993-06-15 Information Storage Devices, Inc. Source follower storage cell and improved method and apparatus for iterative write for integrated circuit analog signal recording and playback
US6301161B1 (en) * 2000-04-25 2001-10-09 Winbond Electronics Corporation Programming flash memory analog storage using coarse-and-fine sequence
JP3631463B2 (ja) * 2001-12-27 2005-03-23 株式会社東芝 不揮発性半導体記憶装置
US6522580B2 (en) * 2001-06-27 2003-02-18 Sandisk Corporation Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data states
US7064980B2 (en) 2003-09-17 2006-06-20 Sandisk Corporation Non-volatile memory and method with bit line coupled compensation
US6956770B2 (en) * 2003-09-17 2005-10-18 Sandisk Corporation Non-volatile memory and method with bit line compensation dependent on neighboring operating modes
US6888758B1 (en) * 2004-01-21 2005-05-03 Sandisk Corporation Programming non-volatile memory
US7313649B2 (en) 2004-04-28 2007-12-25 Matsushita Electric Industrial Co., Ltd. Flash memory and program verify method for flash memory
JP4410188B2 (ja) * 2004-11-12 2010-02-03 株式会社東芝 半導体記憶装置のデータ書き込み方法
US7400532B2 (en) 2006-02-16 2008-07-15 Micron Technology, Inc. Programming method to reduce gate coupling interference for non-volatile memory

Also Published As

Publication number Publication date
TWI351700B (en) 2011-11-01
EP2047474A2 (de) 2009-04-15
KR20090073083A (ko) 2009-07-02
JP4940300B2 (ja) 2012-05-30
WO2008011440A2 (en) 2008-01-24
TW200814062A (en) 2008-03-16
KR101048834B1 (ko) 2011-07-13
ATE472803T1 (de) 2010-07-15
WO2008011440A3 (en) 2008-03-27
EP2047474B1 (de) 2010-06-30
JP2009545093A (ja) 2009-12-17

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