DE602006020265D1 - Elementstruktur mit einem verdrahtungsmaterial aus al-ni-b-legierung - Google Patents

Elementstruktur mit einem verdrahtungsmaterial aus al-ni-b-legierung

Info

Publication number
DE602006020265D1
DE602006020265D1 DE602006020265T DE602006020265T DE602006020265D1 DE 602006020265 D1 DE602006020265 D1 DE 602006020265D1 DE 602006020265 T DE602006020265 T DE 602006020265T DE 602006020265 T DE602006020265 T DE 602006020265T DE 602006020265 D1 DE602006020265 D1 DE 602006020265D1
Authority
DE
Germany
Prior art keywords
assumed
transparent electrode
atomic percent
wiring material
elementstructure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602006020265T
Other languages
English (en)
Inventor
Hironari Urabe
Yoshinori Matsuura
Takashi Kubota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui Mining and Smelting Co Ltd
Original Assignee
Mitsui Mining and Smelting Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from PCT/JP2005/015697 external-priority patent/WO2006117884A1/ja
Application filed by Mitsui Mining and Smelting Co Ltd filed Critical Mitsui Mining and Smelting Co Ltd
Priority claimed from PCT/JP2006/306676 external-priority patent/WO2006117954A1/ja
Publication of DE602006020265D1 publication Critical patent/DE602006020265D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Manufacture Of Alloys Or Alloy Compounds (AREA)
DE602006020265T 2005-04-26 2006-03-30 Elementstruktur mit einem verdrahtungsmaterial aus al-ni-b-legierung Active DE602006020265D1 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2005128670 2005-04-26
PCT/JP2005/015697 WO2006117884A1 (ja) 2005-04-26 2005-08-30 Ａｌ－Ｎｉ－Ｂ合金配線材料及びそれを用いた素子構造
JP2005302871A JP4657882B2 (ja) 2005-04-26 2005-10-18 表示デバイスの素子構造
JP2005302900 2005-10-18
PCT/JP2006/306676 WO2006117954A1 (ja) 2005-04-26 2006-03-30 Ａｌ－Ｎｉ－Ｂ合金配線材料及びそれを用いた素子構造

Publications (1)

Publication Number Publication Date
DE602006020265D1 true DE602006020265D1 (de) 2011-04-07

Family

ID=43646158

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602006020265T Active DE602006020265D1 (de) 2005-04-26 2006-03-30 Elementstruktur mit einem verdrahtungsmaterial aus al-ni-b-legierung

Country Status (3)

Country Link
AT (1) ATE499455T1 (de)
DE (1) DE602006020265D1 (de)
TW (1) TWI326309B (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7683370B2 (en) 2005-08-17 2010-03-23 Kobe Steel, Ltd. Source/drain electrodes, transistor substrates and manufacture methods, thereof, and display devices
JP4684367B2 (ja) * 2008-07-07 2011-05-18 三井金属鉱業株式会社 Ａｌ−Ｎｉ系合金配線電極材料

Also Published As

Publication number Publication date
TW200643186A (en) 2006-12-16
ATE499455T1 (de) 2011-03-15
TWI326309B (en) 2010-06-21

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