DE602006014994D1 - Hochspannungsschalter mit niedrigspannungstransistoren - Google Patents

Hochspannungsschalter mit niedrigspannungstransistoren

Info

Publication number
DE602006014994D1
DE602006014994D1 DE602006014994T DE602006014994T DE602006014994D1 DE 602006014994 D1 DE602006014994 D1 DE 602006014994D1 DE 602006014994 T DE602006014994 T DE 602006014994T DE 602006014994 T DE602006014994 T DE 602006014994T DE 602006014994 D1 DE602006014994 D1 DE 602006014994D1
Authority
DE
Germany
Prior art keywords
transistors
voltage
node
terminals
power switch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602006014994T
Other languages
English (en)
Inventor
Zhenhua Wang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
NXP BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NXP BV filed Critical NXP BV
Publication of DE602006014994D1 publication Critical patent/DE602006014994D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10Modifications for increasing the maximum permissible switched voltage
    • H03K17/102Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/08Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00Conversion of dc power input into dc power output
    • H02M3/02Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/10Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/156Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
    • H02M3/158Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00Conversion of dc power input into dc power output
    • H02M3/02Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/10Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/156Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
    • H02M3/158Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
    • H02M3/1582Buck-boost converters
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
  • Electronic Switches (AREA)
  • Details Of Television Scanning (AREA)
  • Circuit Arrangements For Discharge Lamps (AREA)
DE602006014994T 2005-12-08 2006-12-04 Hochspannungsschalter mit niedrigspannungstransistoren Active DE602006014994D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP05301026 2005-12-08
PCT/IB2006/054585 WO2007066278A1 (en) 2005-12-08 2006-12-04 High voltage power switches using low voltage transistors

Publications (1)

Publication Number Publication Date
DE602006014994D1 true DE602006014994D1 (de) 2010-07-29

Family

ID=37989053

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602006014994T Active DE602006014994D1 (de) 2005-12-08 2006-12-04 Hochspannungsschalter mit niedrigspannungstransistoren

Country Status (7)

Country Link
US (1) US7911192B2 (de)
EP (1) EP1961118B1 (de)
JP (1) JP4756138B2 (de)
CN (1) CN101326718B (de)
AT (1) ATE471598T1 (de)
DE (1) DE602006014994D1 (de)
WO (1) WO2007066278A1 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4734390B2 (ja) * 2008-09-19 2011-07-27 株式会社東芝 コンバータの制御回路
US9035625B2 (en) 2009-12-23 2015-05-19 R2 Semiconductor Common cascode routing bus for high-efficiency DC-to-DC conversion
US8212536B2 (en) * 2009-12-23 2012-07-03 R2 Semiconductor, Inc. Stacked NMOS DC-to-DC power conversion
US8233250B2 (en) 2009-12-23 2012-07-31 R2 Semiconductor, Inc. Over voltage protection of switching converter
US9001530B2 (en) * 2012-06-29 2015-04-07 Finisar Corporation Integrated circuit with voltage conversion
US9696350B2 (en) 2013-03-15 2017-07-04 Intel Corporation Non-linear control for voltage regulator
DE102014019830B4 (de) 2013-03-15 2024-02-22 Intel Corporation Strom-Digital-Analog-Wandler
TWI508092B (zh) * 2013-04-25 2015-11-11 Winbond Electronics Corp 電源處理裝置以及方法
US9641077B2 (en) 2015-01-29 2017-05-02 Qualcomm Incorporated Applying force voltage to switching node of disabled buck converter power stage
JP6407071B2 (ja) * 2015-03-16 2018-10-17 株式会社東芝 電圧切替回路および電源装置
RU2628211C1 (ru) * 2016-08-05 2017-08-15 Самсунг Электроникс Ко., Лтд. Высокочастотный переключатель для компактного модуля преобразователя энергии
CN106817016B (zh) * 2016-12-29 2019-08-13 华为技术有限公司 一种功率管偏置电路
EP3451537B1 (de) * 2017-08-29 2022-10-05 ams AG Hochspannungsausgangstreiber für eine sensorvorrichtung mit umkehrstromsperrung
CN111124022A (zh) * 2018-10-31 2020-05-08 财团法人成大研究发展基金会 数字线性调节器与功率金属氧化物半导体数组
US11258444B2 (en) * 2019-05-17 2022-02-22 Schneider Electric It Corporation Devices and methods for high-efficiency power switching with cascode GaN

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6036605B2 (ja) * 1975-09-23 1985-08-21 ソニー株式会社 スイツチングレギユレ−タ
JPS5780265A (en) * 1980-11-04 1982-05-19 Mitsubishi Electric Corp Method for connecting switching element in series in chopper
JP3181387B2 (ja) * 1992-08-05 2001-07-03 大日本印刷株式会社 容量性負荷用高耐圧駆動回路
JP2901171B2 (ja) * 1993-10-08 1999-06-07 日本電信電話株式会社 ディープサブミクロンmosfet出力バッファ回路
JP3312104B2 (ja) * 1996-12-20 2002-08-05 株式会社東芝 半導体装置用高耐圧プッシュプル出力回路
IES970668A2 (en) * 1997-09-09 1999-03-10 James Christopher Lacey Improved DC/DC converter
JP2000165222A (ja) * 1998-11-27 2000-06-16 Sony Corp アナログスイッチ
JP2001127615A (ja) * 1999-10-28 2001-05-11 Nippon Telegr & Teleph Corp <Ntt> 分割レベル論理回路
US6853569B2 (en) * 2003-01-17 2005-02-08 The Hong Kong Polytechnic University DC to DC converter
JP3763830B2 (ja) * 2003-10-23 2006-04-05 ローム株式会社 電源装置
DE102004007620B4 (de) * 2004-02-17 2008-06-19 Texas Instruments Deutschland Gmbh Vorladeschaltkreis für die Inbetriebnahme eines DC-DC-Wandlers zur Spannungserhöhung
JP2005268895A (ja) 2004-03-16 2005-09-29 Toshiba Corp スイッチ回路
US7355375B2 (en) * 2005-09-30 2008-04-08 Nxp B.V. Dynamic bias circuit for use with a stacked device arrangement
US20070146020A1 (en) * 2005-11-29 2007-06-28 Advanced Analogic Technologies, Inc High Frequency Power MESFET Gate Drive Circuits
US20070170897A1 (en) * 2006-01-26 2007-07-26 Advanced Analogic Technologies, Inc. High-Frequency Power MESFET Buck Switching Power Supply

Also Published As

Publication number Publication date
CN101326718B (zh) 2011-04-20
WO2007066278A1 (en) 2007-06-14
JP4756138B2 (ja) 2011-08-24
JP2009518730A (ja) 2009-05-07
CN101326718A (zh) 2008-12-17
US20080309307A1 (en) 2008-12-18
US7911192B2 (en) 2011-03-22
EP1961118B1 (de) 2010-06-16
ATE471598T1 (de) 2010-07-15
EP1961118A1 (de) 2008-08-27

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