DE602005021369D1 - Feldeffekttransistor und Verfahren zur Herstellung - Google Patents

Feldeffekttransistor und Verfahren zur Herstellung

Info

Publication number
DE602005021369D1
DE602005021369D1 DE602005021369T DE602005021369T DE602005021369D1 DE 602005021369 D1 DE602005021369 D1 DE 602005021369D1 DE 602005021369 T DE602005021369 T DE 602005021369T DE 602005021369 T DE602005021369 T DE 602005021369T DE 602005021369 D1 DE602005021369 D1 DE 602005021369D1
Authority
DE
Germany
Prior art keywords
gate electrode
field effect
effect transistor
drain contact
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602005021369T
Other languages
English (en)
Inventor
Richard Lossy
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Forschungsverbund Berlin FVB eV
Original Assignee
Forschungsverbund Berlin FVB eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Forschungsverbund Berlin FVB eV filed Critical Forschungsverbund Berlin FVB eV
Publication of DE602005021369D1 publication Critical patent/DE602005021369D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
DE602005021369T 2005-11-16 2005-11-16 Feldeffekttransistor und Verfahren zur Herstellung Active DE602005021369D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP05110828A EP1788634B1 (de) 2005-11-16 2005-11-16 Feldeffekttransistor und Verfahren zur Herstellung

Publications (1)

Publication Number Publication Date
DE602005021369D1 true DE602005021369D1 (de) 2010-07-01

Family

ID=36127297

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005021369T Active DE602005021369D1 (de) 2005-11-16 2005-11-16 Feldeffekttransistor und Verfahren zur Herstellung

Country Status (3)

Country Link
EP (1) EP1788634B1 (de)
AT (1) ATE468612T1 (de)
DE (1) DE602005021369D1 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116404039B (zh) 2023-06-08 2023-10-31 安建科技(深圳)有限公司 一种功率半导体器件及其制造方法
CN117457735A (zh) * 2023-12-22 2024-01-26 英诺赛科（珠海）科技有限公司 一种晶体管结构及其制作方法、芯片

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001326285A (ja) 2000-03-07 2001-11-22 Seiko Epson Corp ドライバ回路及びドライバ回路の製造方法
US7126426B2 (en) 2003-09-09 2006-10-24 Cree, Inc. Cascode amplifier structures including wide bandgap field effect transistor with field plates

Also Published As

Publication number Publication date
EP1788634A1 (de) 2007-05-23
ATE468612T1 (de) 2010-06-15
EP1788634B1 (de) 2010-05-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition