DE602005019963D1 - Ferroelektrisches Aufnahmemedium mit einer anisotropen Leitungsschicht - Google Patents

Ferroelektrisches Aufnahmemedium mit einer anisotropen Leitungsschicht

Info

Publication number
DE602005019963D1
DE602005019963D1 DE602005019963T DE602005019963T DE602005019963D1 DE 602005019963 D1 DE602005019963 D1 DE 602005019963D1 DE 602005019963 T DE602005019963 T DE 602005019963T DE 602005019963 T DE602005019963 T DE 602005019963T DE 602005019963 D1 DE602005019963 D1 DE 602005019963D1
Authority
DE
Germany
Prior art keywords
recording medium
conductive layer
anisotropic conductive
ferroelectric recording
ferroelectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602005019963T
Other languages
English (en)
Inventor
Hyoung-Soo Ko
Ju-Hwan Jung
Seung-Bum Hong
Hong-Sik Park
Chul-Min Park
Kyoung-Lock Baeck
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of DE602005019963D1 publication Critical patent/DE602005019963D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/02—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using ferroelectric record carriers; Record carriers therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1409—Heads
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1463—Record carriers for recording or reproduction involving the use of microscopic probe means
    • G11B9/1472—Record carriers for recording or reproduction involving the use of microscopic probe means characterised by the form

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Printers Or Recording Devices Using Electromagnetic And Radiation Means (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)
  • Electrophotography Using Other Than Carlson'S Method (AREA)
DE602005019963T 2004-10-29 2005-10-20 Ferroelektrisches Aufnahmemedium mit einer anisotropen Leitungsschicht Active DE602005019963D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020040087040A KR100590564B1 (ko) 2004-10-29 2004-10-29 이방성 전도층을 구비하는 강유전체 기록 매체, 이를구비하는 기록 장치 및 그 기록 방법

Publications (1)

Publication Number Publication Date
DE602005019963D1 true DE602005019963D1 (de) 2010-04-29

Family

ID=35517299

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005019963T Active DE602005019963D1 (de) 2004-10-29 2005-10-20 Ferroelektrisches Aufnahmemedium mit einer anisotropen Leitungsschicht

Country Status (6)

Country Link
US (1) US7733761B2 (de)
EP (1) EP1653459B1 (de)
JP (1) JP4276225B2 (de)
KR (1) KR100590564B1 (de)
CN (1) CN1767025B (de)
DE (1) DE602005019963D1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4017118B2 (ja) * 2004-01-23 2007-12-05 パイオニア株式会社 強誘電体を用いた記録媒体、記録装置および再生装置
KR100695139B1 (ko) * 2005-02-07 2007-03-14 삼성전자주식회사 강유전체 기록 매체 및 그의 기록 방법
NO20052904L (no) * 2005-06-14 2006-12-15 Thin Film Electronics Asa Et ikke-flyktig elektrisk minnesystem
KR20090014006A (ko) * 2007-08-03 2009-02-06 삼성전자주식회사 전계 재생/기록 헤드와 그의 제조방법 및 전계 재생/기록헤드를 포함한 정보 저장 장치

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3148354A (en) * 1961-12-20 1964-09-08 Ibm Photoelectric recording apparatus
US3710352A (en) * 1970-03-13 1973-01-09 Micro Bit Corp High speed-large storage capability electron beam accessed memory method and apparatus
US3710353A (en) * 1971-12-30 1973-01-09 Ibm Thermal capacitative-ferroelectric storage device
JPS59215096A (ja) * 1983-05-20 1984-12-04 Rikagaku Kenkyusho 高分子強誘電体材料に情報を記録する方法
JPS59215097A (ja) * 1983-05-20 1984-12-04 Rikagaku Kenkyusho 高分子強誘電体材料による情報の記録及び読出し方法
FR2653247B1 (fr) * 1989-10-13 1991-12-06 Thomson Csf Procede et dispositif d'ecriture et de lecture d'informations a partir d'un support a base de materiau ferroelectrique.
JP3286181B2 (ja) 1995-11-17 2002-05-27 ティーディーケイ株式会社 記録媒体およびその製造方法ならびに情報処理装置
FR2757992B1 (fr) * 1996-12-26 1999-01-29 Commissariat Energie Atomique Support d'enregistrement d'informations, dispositif de lecture de ce support et procedes de mise en oeuvre de ce dispositif
US6284654B1 (en) * 1998-04-16 2001-09-04 Advanced Technology Materials, Inc. Chemical vapor deposition process for fabrication of hybrid electrodes
JP3482883B2 (ja) * 1998-08-24 2004-01-06 株式会社村田製作所 強誘電体薄膜素子およびその製造方法
FR2786005B1 (fr) * 1998-11-17 2002-04-12 Commissariat Energie Atomique Procede d'ecriture et de lecture d'un support d'informations comprenant un materiau avec une succession de zones presentant respectivement un premier et un deuxieme etats physiques
KR100395767B1 (ko) * 2001-09-13 2003-08-21 삼성전자주식회사 강유전성 메모리 장치 및 그 형성 방법
US6635498B2 (en) * 2001-12-20 2003-10-21 Texas Instruments Incorporated Method of patterning a FeRAM capacitor with a sidewall during bottom electrode etch
US6713799B2 (en) * 2002-04-26 2004-03-30 Matsushita Electric Industrial Co., Ltd. Electrodes for ferroelectric components
US7391706B2 (en) * 2003-10-31 2008-06-24 Samsung Electronics Co., Ltd. Data storage device including conductive probe and ferroelectric storage medium
JP4017118B2 (ja) * 2004-01-23 2007-12-05 パイオニア株式会社 強誘電体を用いた記録媒体、記録装置および再生装置
US7026676B2 (en) * 2004-06-29 2006-04-11 Seagate Technology Llc Memory array having a layer with electrical conductivity anisotropy

Also Published As

Publication number Publication date
KR20060037937A (ko) 2006-05-03
CN1767025A (zh) 2006-05-03
EP1653459A2 (de) 2006-05-03
KR100590564B1 (ko) 2006-06-19
US7733761B2 (en) 2010-06-08
US20060092817A1 (en) 2006-05-04
EP1653459B1 (de) 2010-03-17
JP4276225B2 (ja) 2009-06-10
JP2006127750A (ja) 2006-05-18
CN1767025B (zh) 2010-08-18
EP1653459A3 (de) 2008-09-03

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