DE602005014601D1 - Verfahren zum Betrieb eines aktiven Pixels mit positiver Übertragungsgate-Spannung während der Integrationsperiode - Google Patents

Verfahren zum Betrieb eines aktiven Pixels mit positiver Übertragungsgate-Spannung während der Integrationsperiode

Info

Publication number
DE602005014601D1
DE602005014601D1 DE602005014601T DE602005014601T DE602005014601D1 DE 602005014601 D1 DE602005014601 D1 DE 602005014601D1 DE 602005014601 T DE602005014601 T DE 602005014601T DE 602005014601 T DE602005014601 T DE 602005014601T DE 602005014601 D1 DE602005014601 D1 DE 602005014601D1
Authority
DE
Germany
Prior art keywords
operating
gate voltage
transfer gate
voltage during
integration period
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602005014601T
Other languages
English (en)
Inventor
Howard E Rhodes
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Omnivision Technologies Inc
Original Assignee
Omnivision Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Omnivision Technologies Inc filed Critical Omnivision Technologies Inc
Publication of DE602005014601D1 publication Critical patent/DE602005014601D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/68—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to defects
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/70—Circuitry for compensating brightness variation in the scene
    • H04N23/741—Circuitry for compensating brightness variation in the scene by increasing the dynamic range of the image compared to the dynamic range of the electronic image sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
DE602005014601T 2004-10-15 2005-10-14 Verfahren zum Betrieb eines aktiven Pixels mit positiver Übertragungsgate-Spannung während der Integrationsperiode Active DE602005014601D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/966,137 US7791663B2 (en) 2004-10-15 2004-10-15 Image sensor and pixel that has positive transfer gate voltage during integration period

Publications (1)

Publication Number Publication Date
DE602005014601D1 true DE602005014601D1 (de) 2009-07-09

Family

ID=35432515

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005014601T Active DE602005014601D1 (de) 2004-10-15 2005-10-14 Verfahren zum Betrieb eines aktiven Pixels mit positiver Übertragungsgate-Spannung während der Integrationsperiode

Country Status (6)

Country Link
US (2) US7791663B2 (de)
EP (1) EP1648160B1 (de)
CN (1) CN100399806C (de)
AT (1) ATE432590T1 (de)
DE (1) DE602005014601D1 (de)
TW (1) TWI290800B (de)

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JP2003143480A (ja) * 2001-11-06 2003-05-16 Sony Corp 固体撮像装置およびその駆動方法
US7791663B2 (en) * 2004-10-15 2010-09-07 Omnivision Technologies, Inc. Image sensor and pixel that has positive transfer gate voltage during integration period
US7378635B2 (en) * 2005-02-11 2008-05-27 Micron Technology, Inc. Method and apparatus for dark current and hot pixel reduction in active pixel image sensors
US8139130B2 (en) 2005-07-28 2012-03-20 Omnivision Technologies, Inc. Image sensor with improved light sensitivity
US8274715B2 (en) 2005-07-28 2012-09-25 Omnivision Technologies, Inc. Processing color and panchromatic pixels
US7916362B2 (en) 2006-05-22 2011-03-29 Eastman Kodak Company Image sensor with improved light sensitivity
US8031258B2 (en) 2006-10-04 2011-10-04 Omnivision Technologies, Inc. Providing multiple video signals from single sensor
US7675093B2 (en) 2006-11-28 2010-03-09 Micron Technology, Inc. Antiblooming imaging apparatus, system, and methods
KR100976886B1 (ko) * 2006-12-22 2010-08-18 크로스텍 캐피탈, 엘엘씨 부동 베이스 판독 개념을 갖는 ｃｍｏｓ 이미지 센서
US7763837B2 (en) 2007-11-20 2010-07-27 Aptina Imaging Corporation Method and apparatus for controlling anti-blooming timing to reduce effects of dark current
US7858914B2 (en) 2007-11-20 2010-12-28 Aptina Imaging Corporation Method and apparatus for reducing dark current and hot pixels in CMOS image sensors
US8891978B2 (en) 2008-09-19 2014-11-18 National University Corporation Shizuoka University Information-acquisition device and optical communication system
US8174601B2 (en) * 2008-12-19 2012-05-08 Omnivision Technologies, Inc. Image sensor with controllable transfer gate off state voltage levels
US8184188B2 (en) * 2009-03-12 2012-05-22 Micron Technology, Inc. Methods and apparatus for high dynamic operation of a pixel cell
CN102957880B (zh) * 2012-11-22 2015-08-05 北京思比科微电子技术股份有限公司 一种有源像素、高动态范围图像传感器及操作有源像素的方法
US9966410B1 (en) * 2017-04-04 2018-05-08 Pixart Imaging (Penang) Sdn. Bhd. Image sensor circuit and image sensing method
CN110741628B (zh) * 2019-05-05 2021-04-27 深圳市汇顶科技股份有限公司 图像传感器及相关芯片、图像传感器操作方法及手持装置
CN116343696A (zh) * 2021-12-22 2023-06-27 广州视源电子科技股份有限公司 显示屏控制方法、装置、存储介质以及电子设备

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US6166768A (en) * 1994-01-28 2000-12-26 California Institute Of Technology Active pixel sensor array with simple floating gate pixels
US6201270B1 (en) * 1997-04-07 2001-03-13 Pao-Jung Chen High speed CMOS photodetectors with wide range operating region and fixed pattern noise reduction
US6667768B1 (en) * 1998-02-17 2003-12-23 Micron Technology, Inc. Photodiode-type pixel for global electronic shutter and reduced lag
US6097022A (en) * 1998-06-17 2000-08-01 Foveon, Inc. Active pixel sensor with bootstrap amplification
US6246043B1 (en) * 1998-09-22 2001-06-12 Foveon, Inc. Method and apparatus for biasing a CMOS active pixel sensor above the nominal voltage maximums for an IC process
US6326230B1 (en) * 1999-01-06 2001-12-04 California Institute Of Technology High speed CMOS imager with motion artifact supression and anti-blooming
US6519371B1 (en) * 1999-09-30 2003-02-11 California Institute Of Technology High-speed on-chip windowed centroiding using photodiode-based CMOS imager
EP1128662A1 (de) * 2000-02-22 2001-08-29 Agilent Technologies Inc. a Delaware Corporation Aktiver Bildsensor mit Photodiode-Entladung
TW516184B (en) * 2000-06-20 2003-01-01 Pixelplus Co Ltd CMOS active pixel for improving sensitivity
WO2002011426A1 (en) * 2000-07-28 2002-02-07 Smal Camera Technologies, Inc. Precise mos imager transfer function control for expanded dynamic range imaging
US6847070B2 (en) * 2000-08-09 2005-01-25 Dalsa, Inc. Five transistor CMOS pixel
JP3724374B2 (ja) 2001-01-15 2005-12-07 ソニー株式会社 固体撮像装置及びその駆動方法
FR2833408B1 (fr) 2001-12-12 2004-03-12 St Microelectronics Sa Procede de controle du sur eclairement d'une photodiode et circuit integre correspondant
US6777662B2 (en) * 2002-07-30 2004-08-17 Freescale Semiconductor, Inc. System, circuit and method providing a dynamic range pixel cell with blooming protection
US6888122B2 (en) * 2002-08-29 2005-05-03 Micron Technology, Inc. High dynamic range cascaded integration pixel cell and method of operation
JP4185771B2 (ja) 2002-12-27 2008-11-26 シャープ株式会社 固体撮像装置
US7446805B2 (en) * 2003-01-08 2008-11-04 Cypress Semiconductor Corporation CMOS active pixel with hard and soft reset
US7141841B2 (en) * 2003-07-03 2006-11-28 Micron Technology, Inc. Image sensor having a transistor for allowing increased dynamic range
US20050083421A1 (en) * 2003-10-16 2005-04-21 Vladimir Berezin Dynamic range enlargement in CMOS image sensors
US7247898B2 (en) * 2004-06-15 2007-07-24 Dialog Imaging Systems Gmbh Self adjusting transfer gate APS
US7193198B2 (en) * 2004-10-01 2007-03-20 Omnivision Technologies, Inc. Image sensor and pixel that has variable capacitance output or floating node
US7791663B2 (en) 2004-10-15 2010-09-07 Omnivision Technologies, Inc. Image sensor and pixel that has positive transfer gate voltage during integration period

Also Published As

Publication number Publication date
US7956913B2 (en) 2011-06-07
CN1780367A (zh) 2006-05-31
EP1648160A1 (de) 2006-04-19
US7791663B2 (en) 2010-09-07
US20100289911A1 (en) 2010-11-18
CN100399806C (zh) 2008-07-02
ATE432590T1 (de) 2009-06-15
TWI290800B (en) 2007-12-01
TW200637352A (en) 2006-10-16
US20060082667A1 (en) 2006-04-20
EP1648160B1 (de) 2009-05-27

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