DE602005005885D1 - Informationsaufzeichnungsmedium und Verfahren zur Herstellung desselben - Google Patents

Informationsaufzeichnungsmedium und Verfahren zur Herstellung desselben

Info

Publication number
DE602005005885D1
DE602005005885D1 DE602005005885T DE602005005885T DE602005005885D1 DE 602005005885 D1 DE602005005885 D1 DE 602005005885D1 DE 602005005885 T DE602005005885 T DE 602005005885T DE 602005005885 T DE602005005885 T DE 602005005885T DE 602005005885 D1 DE602005005885 D1 DE 602005005885D1
Authority
DE
Germany
Prior art keywords
manufacturing
same
recording medium
information recording
information
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE602005005885T
Other languages
English (en)
Other versions
DE602005005885T2 (de
Inventor
Takashi Nishihara
Yukako Doi
Rie Kojima
Noboru Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of DE602005005885D1 publication Critical patent/DE602005005885D1/de
Application granted granted Critical
Publication of DE602005005885T2 publication Critical patent/DE602005005885T2/de
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F23/00—Indicating or measuring liquid level or level of fluent solid material, e.g. indicating in terms of volume or indicating by means of an alarm
    • G01F23/22—Indicating or measuring liquid level or level of fluent solid material, e.g. indicating in terms of volume or indicating by means of an alarm by measuring physical variables, other than linear dimensions, pressure or weight, dependent on the level to be measured, e.g. by difference of heat transfer of steam or water
    • G01F23/26—Indicating or measuring liquid level or level of fluent solid material, e.g. indicating in terms of volume or indicating by means of an alarm by measuring physical variables, other than linear dimensions, pressure or weight, dependent on the level to be measured, e.g. by difference of heat transfer of steam or water by measuring variations of capacity or inductance of capacitors or inductors arising from the presence of liquid or fluent solid material in the electric or electromagnetic fields
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
    • B22D11/00—Continuous casting of metals, i.e. casting in indefinite lengths
    • B22D11/16—Controlling or regulating processes or operations
    • B22D11/18—Controlling or regulating processes or operations for pouring
    • B22D11/181—Controlling or regulating processes or operations for pouring responsive to molten metal level or slag level
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/2403—Layers; Shape, structure or physical properties thereof
    • G11B7/24035—Recording layers
    • G11B7/24038—Multiple laminated recording layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/861—Thermal details
    • H10N70/8616—Thermal insulation means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
    • G11B2007/2571—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing group 14 elements except carbon (Si, Ge, Sn, Pb)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
    • G11B2007/25715—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing oxygen
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/004—Recording, reproducing or erasing methods; Read, write or erase circuits therefor
    • G11B7/0045—Recording
    • G11B7/00454—Recording involving phase-change effects
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/004—Recording, reproducing or erasing methods; Read, write or erase circuits therefor
    • G11B7/0045—Recording
    • G11B7/00456—Recording strategies, e.g. pulse sequences
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/21—Circular sheet or circular blank

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Thermal Sciences (AREA)
  • Fluid Mechanics (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)
  • Thermal Transfer Or Thermal Recording In General (AREA)
  • Manufacturing Optical Record Carriers (AREA)
DE602005005885T 2004-03-10 2005-03-03 Informationsaufzeichnungsmedium und Verfahren zur Herstellung desselben Expired - Fee Related DE602005005885T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2004066878 2004-03-10
JP2004066878 2004-03-10
JP2004070414 2004-03-12
JP2004070414 2004-03-12

Publications (2)

Publication Number Publication Date
DE602005005885D1 true DE602005005885D1 (de) 2008-05-21
DE602005005885T2 DE602005005885T2 (de) 2009-06-04

Family

ID=34829498

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005005885T Expired - Fee Related DE602005005885T2 (de) 2004-03-10 2005-03-03 Informationsaufzeichnungsmedium und Verfahren zur Herstellung desselben

Country Status (6)

Country Link
US (1) US7407697B2 (de)
EP (2) EP1927984A3 (de)
KR (1) KR20060043831A (de)
CN (1) CN1677525A (de)
DE (1) DE602005005885T2 (de)
TW (1) TW200534235A (de)

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DE60312380T2 (de) * 2002-12-13 2007-11-29 Koninklijke Philips Electronics N.V. Wiederbeschreibbarer optischer datenträger
TWI370449B (en) * 2003-07-25 2012-08-11 Panasonic Corp Information recording medium and method for producing the same
US7858290B2 (en) 2003-10-02 2010-12-28 Panasonic Corporation Information recording medium and method for manufacturing the same
JP4136980B2 (ja) * 2004-03-19 2008-08-20 株式会社リコー 多層相変化型情報記録媒体及びその記録再生方法
JP4536071B2 (ja) * 2004-11-26 2010-09-01 パナソニック株式会社 光学情報記録媒体および光学情報記録媒体の記録方法
US8449965B2 (en) * 2005-09-05 2013-05-28 Ricoh Company, Ltd. Multilayer optical recording medium and optical recording method
WO2007052614A1 (ja) * 2005-10-31 2007-05-10 Matsushita Electric Industrial Co., Ltd. 光学的情報記録媒体およびその製造方法
CN101336453B (zh) * 2006-01-31 2011-02-02 松下电器产业株式会社 信息记录介质及其制造方法以及其制造装置
JP2008004151A (ja) * 2006-06-21 2008-01-10 Toshiba Corp 片面多層光ディスク、ｂｃａ記録装置、ｂｃａ記録方法及び光ディスク装置
US7943223B2 (en) * 2007-03-27 2011-05-17 Tdk Corporation Optical recording medium and recording film material
US8158233B2 (en) * 2008-01-31 2012-04-17 Panasonic Corporation Optical information recording medium, method of manufacturing the same, and sputtering target
US8530140B2 (en) * 2008-01-31 2013-09-10 Panasonic Corporation Optical information recording medium and method for manufacturing the same
JP2009215617A (ja) * 2008-03-11 2009-09-24 Mitsui Mining & Smelting Co Ltd コバルト、クロム、および白金からなるマトリックス相と酸化物相とを含有するスパッタリングターゲット材およびその製造方法
US20110079764A1 (en) * 2008-10-06 2011-04-07 Panasonic Corporation Information recording medium, manufacturing method therefor, and sputtering target
JP2010097639A (ja) * 2008-10-15 2010-04-30 Sony Corp 光情報記録媒体およびその記録再生方法
US9425393B2 (en) 2008-12-19 2016-08-23 The Trustees Of The University Of Pennsylvania Non-volatile resistance-switching thin film devices
US9236118B2 (en) 2008-12-19 2016-01-12 The Trustees Of The University Of Pennsylvania Non-volatile resistance-switching thin film devices
US8580593B2 (en) * 2009-09-10 2013-11-12 Micron Technology, Inc. Epitaxial formation structures and associated methods of manufacturing solid state lighting devices
US20170084832A1 (en) * 2014-05-21 2017-03-23 The Trustees Of The University Of Pennsylvania Non-volatile resistance switching devices
US10224481B2 (en) 2014-10-07 2019-03-05 The Trustees Of The University Of Pennsylvania Mechanical forming of resistive memory devices
DE102015013086A1 (de) 2015-10-01 2017-04-06 Jutta Regina Giller Attika für Gebäude
KR102688058B1 (ko) * 2016-08-10 2024-07-25 삼성전자주식회사 상변화 물질을 이용한 광변조기 및 이를 포함하는 장치
EP3282305B1 (de) * 2016-08-10 2020-05-06 Samsung Electronics Co., Ltd. Optischer modulator mit phasenwechselmaterial und vorrichtung damit
JP6431940B2 (ja) * 2017-02-22 2018-11-28 株式会社神戸製鋼所 誘電体層、光記録媒体、スパッタリングターゲット及び酸化物
US11635546B2 (en) * 2017-06-30 2023-04-25 University Of Massachusetts Optically transmissive devices and fabrication
CN109913945B (zh) * 2019-03-14 2021-04-02 电子科技大学 一种在硅(211)衬底上生长硒化铋高指数面单晶薄膜的方法
CN110600609B (zh) * 2019-08-29 2023-06-06 湖北大学 一种忆阻存储器及其制备方法
CN112670354A (zh) * 2020-12-17 2021-04-16 浙江正泰太阳能科技有限公司 一种高效钝化结构电池及其制备方法

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JP3250989B2 (ja) 1998-05-15 2002-01-28 松下電器産業株式会社 光学情報記録媒体、その記録再生方法、その製造法及び光学情報記録再生装置
JP3666854B2 (ja) 2000-03-10 2005-06-29 松下電器産業株式会社 情報記録媒体およびその製造方法
JP3913014B2 (ja) 2000-08-31 2007-05-09 松下電器産業株式会社 情報記録媒体およびその製造方法ならびにその記録再生方法
JP4345246B2 (ja) * 2001-06-18 2009-10-14 ソニー株式会社 光学記録媒体
JP4223703B2 (ja) 2001-09-18 2009-02-12 株式会社リコー 相変化型情報記録媒体
JP2003228881A (ja) 2002-02-04 2003-08-15 Hitachi Ltd 情報記録媒体
KR100906056B1 (ko) 2002-03-19 2009-07-03 파나소닉 주식회사 정보 기록매체와 그 제조 방법
JP4227371B2 (ja) 2002-08-01 2009-02-18 キヤノン株式会社 画像処理装置及びその方法
JP2004066878A (ja) 2002-08-02 2004-03-04 Yazaki Corp 光通信装置
JP2004158145A (ja) * 2002-11-08 2004-06-03 Tdk Corp 光記録媒体
US7335459B2 (en) * 2002-11-22 2008-02-26 Kabushiki Kaisha Toshiba Phase-change optical recording medium
TWI370449B (en) * 2003-07-25 2012-08-11 Panasonic Corp Information recording medium and method for producing the same
EP1669207B1 (de) * 2004-07-28 2010-03-03 Panasonic Corporation Informationsaufzeichnungsmedium

Also Published As

Publication number Publication date
US20050202204A1 (en) 2005-09-15
US7407697B2 (en) 2008-08-05
EP1575043A3 (de) 2006-11-02
EP1927984A1 (de) 2008-06-04
EP1575043A2 (de) 2005-09-14
EP1927984A3 (de) 2008-09-10
EP1575043B1 (de) 2008-04-09
KR20060043831A (ko) 2006-05-15
DE602005005885T2 (de) 2009-06-04
CN1677525A (zh) 2005-10-05
TW200534235A (en) 2005-10-16

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