DE602005005840D1 - 3d-verbindung mit herausragenden kontakten - Google Patents
3d-verbindung mit herausragenden kontaktenInfo
- Publication number
- DE602005005840D1 DE602005005840D1 DE602005005840T DE602005005840T DE602005005840D1 DE 602005005840 D1 DE602005005840 D1 DE 602005005840D1 DE 602005005840 T DE602005005840 T DE 602005005840T DE 602005005840 T DE602005005840 T DE 602005005840T DE 602005005840 D1 DE602005005840 D1 DE 602005005840D1
- Authority
- DE
- Germany
- Prior art keywords
- connection
- outstanding contacts
- outstanding
- contacts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/03—Manufacturing methods
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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- H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
- H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
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- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0657—Stacked arrangements of devices
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- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
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- H01L2225/06513—Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/146—Mixed devices
- H01L2924/1461—MEMS
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Micromachines (AREA)
- Coupling Device And Connection With Printed Circuit (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US960827 | 2004-10-07 | ||
US10/960,827 US7262495B2 (en) | 2004-10-07 | 2004-10-07 | 3D interconnect with protruding contacts |
PCT/US2005/030680 WO2006041580A1 (en) | 2004-10-07 | 2005-08-29 | 3d interconnect with protruding contacts |
Publications (2)
Publication Number | Publication Date |
---|---|
DE602005005840D1 true DE602005005840D1 (de) | 2008-05-15 |
DE602005005840T2 DE602005005840T2 (de) | 2009-05-14 |
Family
ID=35677540
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602005005840T Active DE602005005840T2 (de) | 2004-10-07 | 2005-08-29 | 3d-verbindung mit herausragenden kontakten |
Country Status (5)
Country | Link |
---|---|
US (2) | US7262495B2 (de) |
EP (1) | EP1797591B1 (de) |
DE (1) | DE602005005840T2 (de) |
TW (1) | TWI298928B (de) |
WO (1) | WO2006041580A1 (de) |
Families Citing this family (181)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7091124B2 (en) | 2003-11-13 | 2006-08-15 | Micron Technology, Inc. | Methods for forming vias in microelectronic devices, and methods for packaging microelectronic devices |
US8084866B2 (en) | 2003-12-10 | 2011-12-27 | Micron Technology, Inc. | Microelectronic devices and methods for filling vias in microelectronic devices |
US20050247894A1 (en) | 2004-05-05 | 2005-11-10 | Watkins Charles M | Systems and methods for forming apertures in microfeature workpieces |
US7232754B2 (en) | 2004-06-29 | 2007-06-19 | Micron Technology, Inc. | Microelectronic devices and methods for forming interconnects in microelectronic devices |
US7083425B2 (en) * | 2004-08-27 | 2006-08-01 | Micron Technology, Inc. | Slanted vias for electrical circuits on circuit boards and other substrates |
US7300857B2 (en) | 2004-09-02 | 2007-11-27 | Micron Technology, Inc. | Through-wafer interconnects for photoimager and memory wafers |
US7271482B2 (en) | 2004-12-30 | 2007-09-18 | Micron Technology, Inc. | Methods for forming interconnects in microelectronic workpieces and microelectronic workpieces formed using such methods |
US7795134B2 (en) | 2005-06-28 | 2010-09-14 | Micron Technology, Inc. | Conductive interconnect structures and formation methods using supercritical fluids |
US20060290001A1 (en) * | 2005-06-28 | 2006-12-28 | Micron Technology, Inc. | Interconnect vias and associated methods of formation |
US8217473B2 (en) * | 2005-07-29 | 2012-07-10 | Hewlett-Packard Development Company, L.P. | Micro electro-mechanical system packaging and interconnect |
US7863187B2 (en) | 2005-09-01 | 2011-01-04 | Micron Technology, Inc. | Microfeature workpieces and methods for forming interconnects in microfeature workpieces |
US7262134B2 (en) | 2005-09-01 | 2007-08-28 | Micron Technology, Inc. | Microfeature workpieces and methods for forming interconnects in microfeature workpieces |
US7749899B2 (en) | 2006-06-01 | 2010-07-06 | Micron Technology, Inc. | Microelectronic workpieces and methods and systems for forming interconnects in microelectronic workpieces |
US7629249B2 (en) | 2006-08-28 | 2009-12-08 | Micron Technology, Inc. | Microfeature workpieces having conductive interconnect structures formed by chemically reactive processes, and associated systems and methods |
US7902643B2 (en) | 2006-08-31 | 2011-03-08 | Micron Technology, Inc. | Microfeature workpieces having interconnects and conductive backplanes, and associated systems and methods |
US8043931B1 (en) * | 2006-09-18 | 2011-10-25 | Gang Zhang | Methods for forming multi-layer silicon structures |
CN101652317B (zh) * | 2007-04-04 | 2012-12-12 | 高通Mems科技公司 | 通过牺牲层中的界面修改来消除释放蚀刻侵蚀 |
US8134235B2 (en) * | 2007-04-23 | 2012-03-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Three-dimensional semiconductor device |
US7528492B2 (en) * | 2007-05-24 | 2009-05-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Test patterns for detecting misalignment of through-wafer vias |
US8476735B2 (en) | 2007-05-29 | 2013-07-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Programmable semiconductor interposer for electronic package and method of forming |
US7939941B2 (en) | 2007-06-27 | 2011-05-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Formation of through via before contact processing |
US7825517B2 (en) | 2007-07-16 | 2010-11-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for packaging semiconductor dies having through-silicon vias |
US7973413B2 (en) | 2007-08-24 | 2011-07-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Through-substrate via for semiconductor device |
SG150410A1 (en) | 2007-08-31 | 2009-03-30 | Micron Technology Inc | Partitioned through-layer via and associated systems and methods |
US8476769B2 (en) * | 2007-10-17 | 2013-07-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Through-silicon vias and methods for forming the same |
US8227902B2 (en) * | 2007-11-26 | 2012-07-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structures for preventing cross-talk between through-silicon vias and integrated circuits |
US7588993B2 (en) | 2007-12-06 | 2009-09-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Alignment for backside illumination sensor |
US7884015B2 (en) | 2007-12-06 | 2011-02-08 | Micron Technology, Inc. | Methods for forming interconnects in microelectronic workpieces and microelectronic workpieces formed using such methods |
US7843064B2 (en) | 2007-12-21 | 2010-11-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and process for the formation of TSVs |
US8671476B2 (en) * | 2008-02-05 | 2014-03-18 | Standard Textile Co., Inc. | Woven contoured bed sheet with elastomeric yarns |
US8853830B2 (en) | 2008-05-14 | 2014-10-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | System, structure, and method of manufacturing a semiconductor substrate stack |
JP2010010324A (ja) * | 2008-06-26 | 2010-01-14 | Toshiba Corp | 半導体装置及び半導体装置の製造方法 |
US7948072B2 (en) * | 2008-07-25 | 2011-05-24 | Industrial Technology Research Institute | Wafer-to-wafer stacking |
US8288872B2 (en) | 2008-08-05 | 2012-10-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Through silicon via layout |
US8399273B2 (en) | 2008-08-18 | 2013-03-19 | Tsmc Solid State Lighting Ltd. | Light-emitting diode with current-spreading region |
US20100062693A1 (en) * | 2008-09-05 | 2010-03-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Two step method and apparatus for polishing metal and other films in semiconductor manufacturing |
US8278152B2 (en) * | 2008-09-08 | 2012-10-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Bonding process for CMOS image sensor |
US7872332B2 (en) * | 2008-09-11 | 2011-01-18 | Micron Technology, Inc. | Interconnect structures for stacked dies, including penetrating structures for through-silicon vias, and associated systems and methods |
US9524945B2 (en) | 2010-05-18 | 2016-12-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Cu pillar bump with L-shaped non-metal sidewall protection structure |
US8653648B2 (en) * | 2008-10-03 | 2014-02-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Zigzag pattern for TSV copper adhesion |
US7928534B2 (en) | 2008-10-09 | 2011-04-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Bond pad connection to redistribution lines having tapered profiles |
US8097955B2 (en) * | 2008-10-15 | 2012-01-17 | Qimonda Ag | Interconnect structures and methods |
US8030780B2 (en) | 2008-10-16 | 2011-10-04 | Micron Technology, Inc. | Semiconductor substrates with unitary vias and via terminals, and associated systems and methods |
US8053900B2 (en) * | 2008-10-21 | 2011-11-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Through-substrate vias (TSVs) electrically connected to a bond pad design with reduced dishing effect |
US8624360B2 (en) | 2008-11-13 | 2014-01-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Cooling channels in 3DIC stacks |
US8158456B2 (en) * | 2008-12-05 | 2012-04-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of forming stacked dies |
US7989318B2 (en) | 2008-12-08 | 2011-08-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for stacking semiconductor dies |
US8513119B2 (en) | 2008-12-10 | 2013-08-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming bump structure having tapered sidewalls for stacked dies |
US8736050B2 (en) | 2009-09-03 | 2014-05-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Front side copper post joint structure for temporary bond in TSV application |
US8264077B2 (en) * | 2008-12-29 | 2012-09-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Backside metal of redistribution line with silicide layer on through-silicon via of semiconductor chips |
US7910473B2 (en) * | 2008-12-31 | 2011-03-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Through-silicon via with air gap |
US20100171197A1 (en) * | 2009-01-05 | 2010-07-08 | Hung-Pin Chang | Isolation Structure for Stacked Dies |
US8749027B2 (en) * | 2009-01-07 | 2014-06-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Robust TSV structure |
US8399354B2 (en) | 2009-01-13 | 2013-03-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Through-silicon via with low-K dielectric liner |
US8501587B2 (en) | 2009-01-13 | 2013-08-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Stacked integrated chips and methods of fabrication thereof |
US8168529B2 (en) | 2009-01-26 | 2012-05-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Forming seal ring in an integrated circuit die |
US8314483B2 (en) | 2009-01-26 | 2012-11-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | On-chip heat spreader |
US8820728B2 (en) * | 2009-02-02 | 2014-09-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor wafer carrier |
US8704375B2 (en) * | 2009-02-04 | 2014-04-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Barrier structures and methods for through substrate vias |
US9142586B2 (en) | 2009-02-24 | 2015-09-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Pad design for backside illuminated image sensor |
US8531565B2 (en) | 2009-02-24 | 2013-09-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Front side implanted guard ring structure for backside illuminated image sensor |
US7932608B2 (en) * | 2009-02-24 | 2011-04-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Through-silicon via formed with a post passivation interconnect structure |
US8643149B2 (en) * | 2009-03-03 | 2014-02-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Stress barrier structures for semiconductor chips |
US8487444B2 (en) | 2009-03-06 | 2013-07-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Three-dimensional system-in-package architecture |
US8344513B2 (en) | 2009-03-23 | 2013-01-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Barrier for through-silicon via |
US8329578B2 (en) | 2009-03-27 | 2012-12-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Via structure and via etching process of forming the same |
US8232140B2 (en) | 2009-03-27 | 2012-07-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for ultra thin wafer handling and processing |
US8552563B2 (en) * | 2009-04-07 | 2013-10-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Three-dimensional semiconductor architecture |
US8691664B2 (en) * | 2009-04-20 | 2014-04-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Backside process for a substrate |
US8759949B2 (en) * | 2009-04-30 | 2014-06-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wafer backside structures having copper pillars |
US7902851B2 (en) * | 2009-06-10 | 2011-03-08 | Medtronic, Inc. | Hermeticity testing |
US8432038B2 (en) * | 2009-06-12 | 2013-04-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Through-silicon via structure and a process for forming the same |
US8158489B2 (en) * | 2009-06-26 | 2012-04-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Formation of TSV backside interconnects by modifying carrier wafers |
US9305769B2 (en) | 2009-06-30 | 2016-04-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Thin wafer handling method |
US8871609B2 (en) * | 2009-06-30 | 2014-10-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Thin wafer handling structure and method |
US8247906B2 (en) | 2009-07-06 | 2012-08-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Supplying power to integrated circuits using a grid matrix formed of through-silicon vias |
US8264066B2 (en) | 2009-07-08 | 2012-09-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Liner formation in 3DIC structures |
US8841766B2 (en) | 2009-07-30 | 2014-09-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Cu pillar bump with non-metal sidewall protection structure |
US8377816B2 (en) | 2009-07-30 | 2013-02-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming electrical connections |
US8859424B2 (en) | 2009-08-14 | 2014-10-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor wafer carrier and method of manufacturing |
US8324738B2 (en) | 2009-09-01 | 2012-12-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Self-aligned protection layer for copper post structure |
US8252665B2 (en) * | 2009-09-14 | 2012-08-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Protection layer for adhesive material at wafer edge |
US8791549B2 (en) * | 2009-09-22 | 2014-07-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wafer backside interconnect structure connected to TSVs |
CN102033877A (zh) * | 2009-09-27 | 2011-04-27 | 阿里巴巴集团控股有限公司 | 检索方法和装置 |
US8647925B2 (en) * | 2009-10-01 | 2014-02-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Surface modification for handling wafer thinning process |
US8264067B2 (en) * | 2009-10-09 | 2012-09-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Through silicon via (TSV) wire bond architecture |
US7969013B2 (en) * | 2009-10-22 | 2011-06-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Through silicon via with dummy structure and method for forming the same |
US8659155B2 (en) * | 2009-11-05 | 2014-02-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Mechanisms for forming copper pillar bumps |
US8283745B2 (en) | 2009-11-06 | 2012-10-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of fabricating backside-illuminated image sensor |
US8405201B2 (en) | 2009-11-09 | 2013-03-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Through-silicon via structure |
TWI415219B (zh) * | 2009-12-01 | 2013-11-11 | Darrell Mcreynolds | 用於3-d晶圓/晶片堆疊之穿孔連線的形成方法 |
US10297550B2 (en) * | 2010-02-05 | 2019-05-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | 3D IC architecture with interposer and interconnect structure for bonding dies |
US8610270B2 (en) * | 2010-02-09 | 2013-12-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and semiconductor assembly with lead-free solder |
US8252682B2 (en) * | 2010-02-12 | 2012-08-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for thinning a wafer |
US8390009B2 (en) | 2010-02-16 | 2013-03-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Light-emitting diode (LED) package systems |
US8237272B2 (en) * | 2010-02-16 | 2012-08-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Conductive pillar structure for semiconductor substrate and method of manufacture |
US8222139B2 (en) | 2010-03-30 | 2012-07-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Chemical mechanical polishing (CMP) processing of through-silicon via (TSV) and contact plug simultaneously |
US8466059B2 (en) | 2010-03-30 | 2013-06-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multi-layer interconnect structure for stacked dies |
US8507940B2 (en) | 2010-04-05 | 2013-08-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Heat dissipation by through silicon plugs |
US8174124B2 (en) | 2010-04-08 | 2012-05-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Dummy pattern in wafer backside routing |
US8455995B2 (en) | 2010-04-16 | 2013-06-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | TSVs with different sizes in interposers for bonding dies |
US9293366B2 (en) | 2010-04-28 | 2016-03-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Through-substrate vias with improved connections |
US8519538B2 (en) | 2010-04-28 | 2013-08-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Laser etch via formation |
US8441124B2 (en) | 2010-04-29 | 2013-05-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Cu pillar bump with non-metal sidewall protection structure |
US8866301B2 (en) | 2010-05-18 | 2014-10-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Package systems having interposers with interconnection structures |
US9048233B2 (en) | 2010-05-26 | 2015-06-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Package systems having interposers |
US9059026B2 (en) | 2010-06-01 | 2015-06-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | 3-D inductor and transformer |
US8471358B2 (en) | 2010-06-01 | 2013-06-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | 3D inductor and transformer |
US9018758B2 (en) | 2010-06-02 | 2015-04-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Cu pillar bump with non-metal sidewall spacer and metal top cap |
US8362591B2 (en) | 2010-06-08 | 2013-01-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Integrated circuits and methods of forming the same |
US8411459B2 (en) | 2010-06-10 | 2013-04-02 | Taiwan Semiconductor Manufacturing Company, Ltd | Interposer-on-glass package structures |
US8500182B2 (en) | 2010-06-17 | 2013-08-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Vacuum wafer carriers for strengthening thin wafers |
US8896136B2 (en) | 2010-06-30 | 2014-11-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Alignment mark and method of formation |
US8319336B2 (en) | 2010-07-08 | 2012-11-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Reduction of etch microloading for through silicon vias |
US8338939B2 (en) | 2010-07-12 | 2012-12-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | TSV formation processes using TSV-last approach |
US8999179B2 (en) | 2010-07-13 | 2015-04-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Conductive vias in a substrate |
US8722540B2 (en) | 2010-07-22 | 2014-05-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Controlling defects in thin wafer handling |
US9299594B2 (en) | 2010-07-27 | 2016-03-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Substrate bonding system and method of modifying the same |
US8674510B2 (en) | 2010-07-29 | 2014-03-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Three-dimensional integrated circuit structure having improved power and thermal management |
US8846499B2 (en) | 2010-08-17 | 2014-09-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Composite carrier structure |
US8546254B2 (en) | 2010-08-19 | 2013-10-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Mechanisms for forming copper pillar bumps using patterned anodes |
US8507358B2 (en) | 2010-08-27 | 2013-08-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Composite wafer semiconductor |
US8693163B2 (en) | 2010-09-01 | 2014-04-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Cylindrical embedded capacitors |
US8928159B2 (en) | 2010-09-02 | 2015-01-06 | Taiwan Semiconductor Manufacturing & Company, Ltd. | Alignment marks in substrate having through-substrate via (TSV) |
US8502338B2 (en) | 2010-09-09 | 2013-08-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Through-substrate via waveguides |
US8928127B2 (en) | 2010-09-24 | 2015-01-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Noise decoupling structure with through-substrate vias |
US8525343B2 (en) | 2010-09-28 | 2013-09-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Device with through-silicon via (TSV) and method of forming the same |
US8580682B2 (en) | 2010-09-30 | 2013-11-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Cost-effective TSV formation |
US9190325B2 (en) | 2010-09-30 | 2015-11-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | TSV formation |
US8836116B2 (en) | 2010-10-21 | 2014-09-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wafer level packaging of micro-electro-mechanical systems (MEMS) and complementary metal-oxide-semiconductor (CMOS) substrates |
US8519409B2 (en) | 2010-11-15 | 2013-08-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Light emitting diode components integrated with thermoelectric devices |
US8567837B2 (en) | 2010-11-24 | 2013-10-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Reconfigurable guide pin design for centering wafers having different sizes |
US9153462B2 (en) | 2010-12-09 | 2015-10-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Spin chuck for thin wafer cleaning |
US8773866B2 (en) | 2010-12-10 | 2014-07-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Radio-frequency packaging with reduced RF loss |
US8236584B1 (en) | 2011-02-11 | 2012-08-07 | Tsmc Solid State Lighting Ltd. | Method of forming a light emitting diode emitter substrate with highly reflective metal bonding |
US9059262B2 (en) | 2011-02-24 | 2015-06-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuits including conductive structures through a substrate and methods of making the same |
US8487410B2 (en) | 2011-04-13 | 2013-07-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Through-silicon vias for semicondcutor substrate and method of manufacture |
US8716128B2 (en) | 2011-04-14 | 2014-05-06 | Tsmc Solid State Lighting Ltd. | Methods of forming through silicon via openings |
US8546235B2 (en) | 2011-05-05 | 2013-10-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuits including metal-insulator-metal capacitors and methods of forming the same |
US8674883B2 (en) | 2011-05-24 | 2014-03-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Antenna using through-silicon via |
US8900994B2 (en) | 2011-06-09 | 2014-12-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for producing a protective structure |
US8552485B2 (en) | 2011-06-15 | 2013-10-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor structure having metal-insulator-metal capacitor structure |
US8587127B2 (en) | 2011-06-15 | 2013-11-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor structures and methods of forming the same |
US8766409B2 (en) | 2011-06-24 | 2014-07-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and structure for through-silicon via (TSV) with diffused isolation well |
US8531035B2 (en) | 2011-07-01 | 2013-09-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Interconnect barrier structure and method |
US8872345B2 (en) | 2011-07-07 | 2014-10-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Forming grounded through-silicon vias in a semiconductor substrate |
US8604491B2 (en) | 2011-07-21 | 2013-12-10 | Tsmc Solid State Lighting Ltd. | Wafer level photonic device die structure and method of making the same |
US8445296B2 (en) | 2011-07-22 | 2013-05-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and methods for end point determination in reactive ion etching |
US8809073B2 (en) | 2011-08-03 | 2014-08-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and methods for de-embedding through substrate vias |
US9159907B2 (en) | 2011-08-04 | 2015-10-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Hybrid film for protecting MTJ stacks of MRAM |
US8748284B2 (en) | 2011-08-12 | 2014-06-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacturing decoupling MIM capacitor designs for interposers |
US8525278B2 (en) | 2011-08-19 | 2013-09-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | MEMS device having chip scale packaging |
US8546886B2 (en) | 2011-08-24 | 2013-10-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Controlling the device performance by forming a stressed backside dielectric layer |
US8604619B2 (en) | 2011-08-31 | 2013-12-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Through silicon via keep out zone formation along different crystal orientations |
US8803322B2 (en) | 2011-10-13 | 2014-08-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Through substrate via structures and methods of forming the same |
US8610247B2 (en) | 2011-12-30 | 2013-12-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and method for a transformer with magnetic features |
US8659126B2 (en) | 2011-12-07 | 2014-02-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit ground shielding structure |
US9087838B2 (en) | 2011-10-25 | 2015-07-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and method for a high-K transformer with capacitive coupling |
US8896089B2 (en) | 2011-11-09 | 2014-11-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Interposers for semiconductor devices and methods of manufacture thereof |
US11264262B2 (en) | 2011-11-29 | 2022-03-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wafer debonding and cleaning apparatus |
US9390949B2 (en) | 2011-11-29 | 2016-07-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wafer debonding and cleaning apparatus and method of use |
US10381254B2 (en) | 2011-11-29 | 2019-08-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Wafer debonding and cleaning apparatus and method |
US8803316B2 (en) | 2011-12-06 | 2014-08-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | TSV structures and methods for forming the same |
US8546953B2 (en) | 2011-12-13 | 2013-10-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Through silicon via (TSV) isolation structures for noise reduction in 3D integrated circuit |
US8890293B2 (en) | 2011-12-16 | 2014-11-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Guard ring for through vias |
US8580647B2 (en) | 2011-12-19 | 2013-11-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Inductors with through VIAS |
US8618631B2 (en) | 2012-02-14 | 2013-12-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | On-chip ferrite bead inductor |
US9618712B2 (en) | 2012-02-23 | 2017-04-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Optical bench on substrate and method of making the same |
US10180547B2 (en) | 2012-02-23 | 2019-01-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Optical bench on substrate |
US9293521B2 (en) | 2012-03-02 | 2016-03-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Concentric capacitor structure |
US8860114B2 (en) | 2012-03-02 | 2014-10-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and method for a fishbone differential capacitor |
US9312432B2 (en) | 2012-03-13 | 2016-04-12 | Tsmc Solid State Lighting Ltd. | Growing an improved P-GaN layer of an LED through pressure ramping |
US9139420B2 (en) | 2012-04-18 | 2015-09-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | MEMS device structure and methods of forming same |
US9583365B2 (en) | 2012-05-25 | 2017-02-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming interconnects for three dimensional integrated circuit |
CN103633010B (zh) * | 2012-08-28 | 2016-12-21 | 中国科学院上海微系统与信息技术研究所 | 利用掺杂超薄层吸附制备超薄绝缘体上材料的方法 |
US9490133B2 (en) | 2013-01-24 | 2016-11-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Etching apparatus |
US9484211B2 (en) | 2013-01-24 | 2016-11-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Etchant and etching process |
US9041152B2 (en) | 2013-03-14 | 2015-05-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Inductor with magnetic material |
US9016837B2 (en) | 2013-05-14 | 2015-04-28 | Stmicroelectronics, Inc. | Ink jet printhead device with compressive stressed dielectric layer |
US9016836B2 (en) | 2013-05-14 | 2015-04-28 | Stmicroelectronics, Inc. | Ink jet printhead with polarity-changing driver for thermal resistors |
CN104992910B (zh) * | 2015-06-24 | 2017-07-28 | 武汉新芯集成电路制造有限公司 | 一种金属突刺混合键合方法 |
Family Cites Families (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5117276A (en) * | 1989-08-14 | 1992-05-26 | Fairchild Camera And Instrument Corp. | High performance interconnect system for an integrated circuit |
US5055426A (en) * | 1990-09-10 | 1991-10-08 | Micron Technology, Inc. | Method for forming a multilevel interconnect structure on a semiconductor wafer |
US5229647A (en) * | 1991-03-27 | 1993-07-20 | Micron Technology, Inc. | High density data storage using stacked wafers |
US5275330A (en) * | 1993-04-12 | 1994-01-04 | International Business Machines Corp. | Solder ball connect pad-on-via assembly process |
DE69429848T2 (de) | 1993-11-01 | 2002-09-26 | Matsushita Electric Industrial Co., Ltd. | Elektronische Anordnung und Verfahren zur Herstellung |
US5424245A (en) * | 1994-01-04 | 1995-06-13 | Motorola, Inc. | Method of forming vias through two-sided substrate |
US5627106A (en) * | 1994-05-06 | 1997-05-06 | United Microelectronics Corporation | Trench method for three dimensional chip connecting during IC fabrication |
JPH08167630A (ja) * | 1994-12-15 | 1996-06-25 | Hitachi Ltd | チップ接続構造 |
FR2754391B1 (fr) * | 1996-10-08 | 1999-04-16 | Sgs Thomson Microelectronics | Structure de contact a facteur de forme eleve pour circuits integres |
US6809421B1 (en) * | 1996-12-02 | 2004-10-26 | Kabushiki Kaisha Toshiba | Multichip semiconductor device, chip therefor and method of formation thereof |
US6221753B1 (en) * | 1997-01-24 | 2001-04-24 | Micron Technology, Inc. | Flip chip technique for chip assembly |
US6025730A (en) * | 1997-03-17 | 2000-02-15 | Micron Technology, Inc. | Direct connect interconnect for testing semiconductor dice and wafers |
US5998292A (en) * | 1997-11-12 | 1999-12-07 | International Business Machines Corporation | Method for making three dimensional circuit integration |
US6620731B1 (en) * | 1997-12-18 | 2003-09-16 | Micron Technology, Inc. | Method for fabricating semiconductor components and interconnects with contacts on opposing sides |
US5943574A (en) * | 1998-02-23 | 1999-08-24 | Motorola, Inc. | Method of fabricating 3D multilayer semiconductor circuits |
US6545359B1 (en) * | 1998-12-18 | 2003-04-08 | Semiconductor Energy Laboratory Co., Ltd. | Wiring line and manufacture process thereof, and semiconductor device and manufacturing process thereof |
US6278181B1 (en) * | 1999-06-28 | 2001-08-21 | Advanced Micro Devices, Inc. | Stacked multi-chip modules using C4 interconnect technology having improved thermal management |
US6703286B1 (en) * | 1999-07-29 | 2004-03-09 | Taiwan Semiconductor Manufacturing Company | Metal bond pad for low-k inter metal dielectric |
US6291331B1 (en) * | 1999-10-04 | 2001-09-18 | Taiwan Semiconductor Manufacturing Company | Re-deposition high compressive stress PECVD oxide film after IMD CMP process to solve more than 5 metal stack via process IMD crack issue |
US6710446B2 (en) * | 1999-12-30 | 2004-03-23 | Renesas Technology Corporation | Semiconductor device comprising stress relaxation layers and method for manufacturing the same |
US6902987B1 (en) | 2000-02-16 | 2005-06-07 | Ziptronix, Inc. | Method for low temperature bonding and bonded structure |
US7557452B1 (en) * | 2000-06-08 | 2009-07-07 | Micron Technology, Inc. | Reinforced, self-aligning conductive structures for semiconductor device components and methods for fabricating same |
US6313003B1 (en) * | 2000-08-17 | 2001-11-06 | Taiwan Semiconductor Manufacturing Company | Fabrication process for metal-insulator-metal capacitor with low gate resistance |
US20020074637A1 (en) * | 2000-12-19 | 2002-06-20 | Intel Corporation | Stacked flip chip assemblies |
US6479376B1 (en) * | 2001-03-16 | 2002-11-12 | Taiwan Semiconductor Manufacturing Company | Process improvement for the creation of aluminum contact bumps |
US6686664B2 (en) * | 2001-04-30 | 2004-02-03 | International Business Machines Corporation | Structure to accommodate increase in volume expansion during solder reflow |
US6534374B2 (en) * | 2001-06-07 | 2003-03-18 | Institute Of Microelectronics | Single damascene method for RF IC passive component integration in copper interconnect process |
US6627092B2 (en) * | 2001-07-27 | 2003-09-30 | Hewlett-Packard Development Company, L.P. | Method for the fabrication of electrical contacts |
DE10149688B4 (de) * | 2001-10-09 | 2004-09-09 | Infineon Technologies Ag | Verfahren zum Herstellen einer Mikrokontaktfeder auf einem Substrat |
US6794737B2 (en) * | 2001-10-12 | 2004-09-21 | Xerox Corporation | Spring structure with stress-balancing layer |
US20030136505A1 (en) | 2002-01-18 | 2003-07-24 | Wimmer Phillip L. | Method of preparing a surface for adhesion |
US6762076B2 (en) * | 2002-02-20 | 2004-07-13 | Intel Corporation | Process of vertically stacking multiple wafers supporting different active integrated circuit (IC) devices |
US6593224B1 (en) * | 2002-03-05 | 2003-07-15 | Bridge Semiconductor Corporation | Method of manufacturing a multilayer interconnect substrate |
WO2004059720A1 (en) * | 2002-12-20 | 2004-07-15 | International Business Machines Corporation | Three-dimensional device fabrication method |
JP4072677B2 (ja) * | 2003-01-15 | 2008-04-09 | セイコーエプソン株式会社 | 半導体チップ、半導体ウエハ、半導体装置及びその製造方法、回路基板並びに電子機器 |
US6962835B2 (en) * | 2003-02-07 | 2005-11-08 | Ziptronix, Inc. | Method for room temperature metal direct bonding |
US7312487B2 (en) * | 2004-08-16 | 2007-12-25 | International Business Machines Corporation | Three dimensional integrated circuit |
US7294568B2 (en) * | 2004-08-20 | 2007-11-13 | Intel Corporation | Formation of air gaps in an interconnect structure using a thin permeable hard mask and resulting structures |
US7199050B2 (en) * | 2004-08-24 | 2007-04-03 | Micron Technology, Inc. | Pass through via technology for use during the manufacture of a semiconductor device |
-
2004
- 2004-10-07 US US10/960,827 patent/US7262495B2/en active Active
-
2005
- 2005-08-29 WO PCT/US2005/030680 patent/WO2006041580A1/en active Application Filing
- 2005-08-29 EP EP05816153A patent/EP1797591B1/de not_active Not-in-force
- 2005-08-29 DE DE602005005840T patent/DE602005005840T2/de active Active
- 2005-09-07 TW TW094130700A patent/TWI298928B/zh not_active IP Right Cessation
-
2007
- 2007-07-16 US US11/778,196 patent/US7833830B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP1797591B1 (de) | 2008-04-02 |
US20070254405A1 (en) | 2007-11-01 |
US7833830B2 (en) | 2010-11-16 |
WO2006041580A1 (en) | 2006-04-20 |
TWI298928B (en) | 2008-07-11 |
TW200616145A (en) | 2006-05-16 |
US7262495B2 (en) | 2007-08-28 |
DE602005005840T2 (de) | 2009-05-14 |
EP1797591A1 (de) | 2007-06-20 |
US20060076664A1 (en) | 2006-04-13 |
WO2006041580A9 (en) | 2007-10-11 |
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