DE602004031574D1 - RF-Verstärker mit variabler Verstärkung mit verstärkungsunempfindlicher Linearität - Google Patents

RF-Verstärker mit variabler Verstärkung mit verstärkungsunempfindlicher Linearität

Info

Publication number
DE602004031574D1
DE602004031574D1 DE602004031574T DE602004031574T DE602004031574D1 DE 602004031574 D1 DE602004031574 D1 DE 602004031574D1 DE 602004031574 T DE602004031574 T DE 602004031574T DE 602004031574 T DE602004031574 T DE 602004031574T DE 602004031574 D1 DE602004031574 D1 DE 602004031574D1
Authority
DE
Germany
Prior art keywords
gain
linearity
amplifier
insensitive
variable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE602004031574T
Other languages
English (en)
Inventor
Arya Behzad
Li Lin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Broadcom Corp
Original Assignee
Broadcom Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Broadcom Corp filed Critical Broadcom Corp
Publication of DE602004031574D1 publication Critical patent/DE602004031574D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3205—Modifications of amplifiers to reduce non-linear distortion in field-effect transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45183—Long tailed pairs
    • H03F3/45188—Non-folded cascode stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0088—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using discontinuously variable devices, e.g. switch-operated
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/001—Digital control of analog signals
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/366—Multiple MOSFETs are coupled in parallel
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Amplifiers (AREA)
  • Control Of Amplification And Gain Control (AREA)
DE602004031574T 2003-06-06 2004-03-26 RF-Verstärker mit variabler Verstärkung mit verstärkungsunempfindlicher Linearität Expired - Lifetime DE602004031574D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/456,417 US6888411B2 (en) 2003-06-06 2003-06-06 Radio frequency variable gain amplifier with linearity insensitive to gain

Publications (1)

Publication Number Publication Date
DE602004031574D1 true DE602004031574D1 (de) 2011-04-14

Family

ID=33159586

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004031574T Expired - Lifetime DE602004031574D1 (de) 2003-06-06 2004-03-26 RF-Verstärker mit variabler Verstärkung mit verstärkungsunempfindlicher Linearität

Country Status (3)

Country Link
US (2) US6888411B2 (de)
EP (1) EP1484840B1 (de)
DE (1) DE602004031574D1 (de)

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US6798290B2 (en) * 2001-08-31 2004-09-28 Sequoia Communications Translinear variable gain amplifier
JP4273729B2 (ja) * 2002-09-18 2009-06-03 ソニー株式会社 可変利得増幅器
US7200370B2 (en) * 2003-10-14 2007-04-03 Broadcom Corporation Power amplifier having enhanced swing cascode architecture
JP4282490B2 (ja) * 2004-01-06 2009-06-24 パナソニック株式会社 フィルタ自動調整装置及び通信機
KR100783492B1 (ko) * 2004-07-31 2007-12-11 인티그런트 테크놀로지즈(주) 차동증폭회로 및 이를 포함한 믹서회로
US7199659B2 (en) * 2004-09-03 2007-04-03 Broadcom Corporation Non-match power amplifier and method for increased output 1 dB compression point
US7276976B2 (en) * 2004-12-02 2007-10-02 Electronics And Telecommunications Research Institute Triple cascode power amplifier of inner parallel configuration with dynamic gate bias technique
US20060166629A1 (en) * 2005-01-24 2006-07-27 Therasense, Inc. Method and apparatus for providing EMC Class-B compliant RF transmitter for data monitoring an detection systems
US7548733B2 (en) * 2005-03-31 2009-06-16 Broadcom Corporation Wireless transmitter having multiple power amplifier drivers (PADs) that are selectively biased to provide substantially linear magnitude and phase responses
US7274275B2 (en) * 2005-06-10 2007-09-25 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Bandpass filter network and method for bandpass filtering signals using multiple acoustic resonators
US7474158B1 (en) * 2006-04-10 2009-01-06 Rf Micro Devices, Inc. Dynamic match low noise amplifier with reduced current consumption in low gain mode
US20070270111A1 (en) * 2006-05-19 2007-11-22 Broadcom Corporation Dual power mode transmitter
JP4257346B2 (ja) * 2006-06-27 2009-04-22 株式会社東芝 電力増幅器
US7459969B2 (en) * 2006-08-11 2008-12-02 Broadcom Corporation Transmitter power amplifier working at different power supplies
US7860467B2 (en) 2006-08-29 2010-12-28 Broadcom Corporation Power control for a dual mode transmitter
US20090104873A1 (en) * 2007-10-18 2009-04-23 Broadcom Corporation Fully integrated compact cross-coupled low noise amplifier
US8723531B2 (en) * 2009-03-12 2014-05-13 Sige Semiconductor, Inc. Integrated VSWR detector for monolithic microwave integrated circuits
US8022772B2 (en) * 2009-03-19 2011-09-20 Qualcomm Incorporated Cascode amplifier with protection circuitry
US7889008B2 (en) * 2009-06-08 2011-02-15 Mediatek Inc. Programmable gain MOS amplifier
US8330547B2 (en) * 2009-06-30 2012-12-11 Qualcomm, Incorporated Gain control linearity in an RF driver amplifier transmitter
US8482348B2 (en) * 2011-08-30 2013-07-09 Intel Mobile Communications GmbH Class of power amplifiers for improved back off operation
KR101862708B1 (ko) * 2011-12-28 2018-05-31 삼성전자주식회사 무선송신기에서 구동증폭기 이득을 지수적으로 제어하기 위한 장치 및 방법
US8665027B2 (en) * 2012-01-10 2014-03-04 Mstar Semiconductor, Inc. Amplifier for wireless receiver and associated method
CN102684621B (zh) * 2012-05-22 2014-11-05 华为技术有限公司 可变增益放大器
US8742846B1 (en) * 2013-03-14 2014-06-03 Hittite Microwave Corporation Selectable gain differential amplifier
WO2016021092A1 (ja) * 2014-08-04 2016-02-11 日本電気株式会社 スイッチング増幅器および無線送信機
US9654155B2 (en) 2015-02-15 2017-05-16 Skyworks Solutions, Inc. Cascode amplifier segmentation for enhanced thermal ruggedness
US9698729B2 (en) * 2015-11-04 2017-07-04 Infineon Technologies Ag Optimum current control CMOS cascode amplifier
US9837974B2 (en) 2015-11-12 2017-12-05 Mediatek Inc. Amplifier system and method for controlling amplifier
US10230332B2 (en) 2016-08-18 2019-03-12 Skyworks Solutions, Inc. Apparatus and methods for biasing low noise amplifiers
US10171045B2 (en) 2016-08-18 2019-01-01 Skyworks Solutions, Inc. Apparatus and methods for low noise amplifiers with mid-node impedance networks
US10771025B1 (en) 2019-02-19 2020-09-08 Psemi Corporation RFFE LNA topology supporting both noncontiguous intraband carrier aggregation and interband carrier aggregation

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Publication number Priority date Publication date Assignee Title
US5903191A (en) * 1998-01-23 1999-05-11 Analog Devices, Inc. Digitally controlled variable transconductance amplifier system
US5999052A (en) 1998-04-28 1999-12-07 Lucent Technologies Inc. High speed, fine-resolution gain programmable amplifier
US5999056A (en) * 1998-06-30 1999-12-07 Philips Electronics North Amercia Corporation Variable gain amplifier using impedance network
US7555263B1 (en) * 1999-10-21 2009-06-30 Broadcom Corporation Adaptive radio transceiver
JP3515725B2 (ja) * 2000-01-26 2004-04-05 Ｎｅｃ化合物デバイス株式会社 低電流増幅回路
US6563382B1 (en) * 2000-10-10 2003-05-13 International Business Machines Corporation Linear variable gain amplifiers
US6424222B1 (en) * 2001-03-29 2002-07-23 Gct Semiconductor, Inc. Variable gain low noise amplifier for a wireless terminal
US6400227B1 (en) 2001-05-31 2002-06-04 Analog Devices, Inc. Stepped gain controlled RF driver amplifier in CMOS
US6437612B1 (en) * 2001-11-28 2002-08-20 Institute Of Microelectronics Inductor-less RF/IF CMOS buffer for 50Ω off-chip load driving
US6496067B1 (en) * 2002-01-07 2002-12-17 Broadcom Class AB voltage current convertor having multiple transconductance stages and its application to power amplifiers
GB2393055B (en) * 2002-09-10 2006-08-30 Wolfson Ltd Transconductance amplifiers
US6987422B2 (en) * 2003-05-15 2006-01-17 Agilent Technologies, Inc. Equal phase multiple gain state amplifier
US6888410B1 (en) * 2003-10-10 2005-05-03 Broadcom Corp. Power amplifier having low gate oxide stress

Also Published As

Publication number Publication date
US20050195039A1 (en) 2005-09-08
EP1484840B1 (de) 2011-03-02
US7126428B2 (en) 2006-10-24
US20040246056A1 (en) 2004-12-09
US6888411B2 (en) 2005-05-03
EP1484840A2 (de) 2004-12-08
EP1484840A3 (de) 2007-11-14

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