DE602004014197D1 - Optische bauelemente mit dünnen ferroelektrischen filmen - Google Patents
Optische bauelemente mit dünnen ferroelektrischen filmenInfo
- Publication number
- DE602004014197D1 DE602004014197D1 DE602004014197T DE602004014197T DE602004014197D1 DE 602004014197 D1 DE602004014197 D1 DE 602004014197D1 DE 602004014197 T DE602004014197 T DE 602004014197T DE 602004014197 T DE602004014197 T DE 602004014197T DE 602004014197 D1 DE602004014197 D1 DE 602004014197D1
- Authority
- DE
- Germany
- Prior art keywords
- ferroelectric crystal
- substrate
- optical components
- ferroelectric
- ferroelectric films
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000003287 optical effect Effects 0.000 title 1
- 239000013078 crystal Substances 0.000 abstract 6
- 239000000758 substrate Substances 0.000 abstract 3
- 238000000034 method Methods 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/28—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
- G02B6/293—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means
- G02B6/29346—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means operating by wave or beam interference
- G02B6/2935—Mach-Zehnder configuration, i.e. comprising separate splitting and combining means
- G02B6/29352—Mach-Zehnder configuration, i.e. comprising separate splitting and combining means in a light guide
- G02B6/29355—Cascade arrangement of interferometers
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/28—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
- G02B6/293—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means
- G02B6/29379—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means characterised by the function or use of the complete device
- G02B6/29392—Controlling dispersion
- G02B6/29394—Compensating wavelength dispersion
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/355—Non-linear optics characterised by the materials used
- G02F1/3551—Crystals
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31691—Inorganic layers composed of oxides or glassy oxides or oxide based glass with perovskite structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
- H10N15/10—Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/37—Non-linear optics for second-harmonic generation
- G02F1/377—Non-linear optics for second-harmonic generation in an optical waveguide structure
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/39—Non-linear optics for parametric generation or amplification of light, infrared or ultraviolet waves
- G02F1/392—Parametric amplification
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Dispersion Chemistry (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Optical Integrated Circuits (AREA)
- Inorganic Insulating Materials (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP04000408 | 2004-01-12 | ||
PCT/CH2004/000365 WO2005067031A1 (en) | 2004-01-12 | 2004-06-17 | Ferroelectric thin films and devices comprising thin ferroelectric films |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602004014197D1 true DE602004014197D1 (de) | 2008-07-10 |
Family
ID=34745845
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602004014197T Expired - Fee Related DE602004014197D1 (de) | 2004-01-12 | 2004-06-17 | Optische bauelemente mit dünnen ferroelektrischen filmen |
Country Status (5)
Country | Link |
---|---|
US (1) | US20080165565A1 (de) |
EP (1) | EP1714317B1 (de) |
AT (1) | ATE397233T1 (de) |
DE (1) | DE602004014197D1 (de) |
WO (1) | WO2005067031A1 (de) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007212787A (ja) * | 2006-02-09 | 2007-08-23 | Ricoh Co Ltd | 光制御素子、光スイッチングユニットおよび光変調器 |
US7257291B1 (en) * | 2006-07-29 | 2007-08-14 | Lucent Technologies Inc. | Ultra-narrow bandpass filter |
KR100877398B1 (ko) * | 2006-11-24 | 2009-01-08 | 재단법인서울대학교산학협력재단 | 포토닉 메모리 장치 및 포토닉 센서 장치 |
US7519249B2 (en) * | 2007-03-11 | 2009-04-14 | Alcatel-Lucent Usa Inc. | Semiconductor optical modulator |
US20090297094A1 (en) | 2008-03-05 | 2009-12-03 | University Of Washington | All-optical modulation and sdwitching with patterned optically absorbing polymers |
US7589886B1 (en) * | 2008-08-12 | 2009-09-15 | Hc Photonics Corp. | Wavelength converter structure and method for preparing the same |
US8909003B1 (en) | 2009-01-16 | 2014-12-09 | University Of Washington Through Its Center For Commercialization | Low-noise and high bandwidth electric field sensing with silicon-polymer integrated photonics and low drive voltage modulator fiber-based antenna link |
US8143578B2 (en) * | 2009-04-21 | 2012-03-27 | The United States Of America As Represented By The Secretary Of The Army | Ferroelectric radiation detector employing frequency modulated readout |
JP2011165711A (ja) * | 2010-02-04 | 2011-08-25 | Toshiba Corp | 半導体記憶装置 |
JP5429200B2 (ja) * | 2010-05-17 | 2014-02-26 | 株式会社村田製作所 | 複合圧電基板の製造方法および圧電デバイス |
US8818141B1 (en) | 2010-06-25 | 2014-08-26 | University Of Washington | Transmission line driven slot waveguide mach-zehnder interferometers |
US8625936B1 (en) | 2012-06-29 | 2014-01-07 | Alcatel Lucent | Advanced modulation formats using optical modulators |
US20140003810A1 (en) | 2012-07-02 | 2014-01-02 | Alcatel-Lucent Usa Inc. | Reconfigurable optical networks |
US9111730B2 (en) * | 2013-06-28 | 2015-08-18 | Payam Rabiei | Method for production of optical waveguides and coupling and devices made from the same |
CN103401615B (zh) * | 2013-07-10 | 2015-12-02 | 武汉市兴跃腾科技有限公司 | 全光超宽带脉冲信号产生装置和方法 |
CN103487889A (zh) * | 2013-08-12 | 2014-01-01 | 上海交通大学 | 基于双谐振腔耦合马赫-曾德尔光开关结构 |
DE102015119875A1 (de) * | 2015-06-19 | 2016-12-22 | Laser- Und Medizin-Technologie Gmbh, Berlin | Lateral abstrahlende Lichtwellenleiter und Verfahren zur Einbringung von Mikromodifikationen in einen Lichtwellenleiter |
CN105092531B (zh) * | 2015-08-31 | 2017-10-20 | 浙江大学 | 基于双环谐振腔辅助的马赫‑曾德尔干涉仪光学生物传感器 |
WO2017160553A2 (en) * | 2016-03-08 | 2017-09-21 | Massachusetts Institute Of Technology | Apparatus and methods for memory using in-plane polarization |
US10302864B2 (en) | 2016-06-02 | 2019-05-28 | Ohio State Innovation Foundation | Method of forming a deterministic thin film from a crystal substrate by etching a bilayer bonding interface to create a channel |
JP6824112B2 (ja) * | 2017-05-15 | 2021-02-03 | 株式会社東芝 | 導波素子、発光装置及び導波素子の製造方法 |
WO2019213139A1 (en) * | 2018-04-30 | 2019-11-07 | President And Fellows Of Harvard College | Active photonic networks on integrated lithium niobate platforms |
JP7127472B2 (ja) * | 2018-10-15 | 2022-08-30 | 日本電信電話株式会社 | 波長変換素子の作製方法 |
US10665581B1 (en) | 2019-01-23 | 2020-05-26 | Sandisk Technologies Llc | Three-dimensional semiconductor chip containing memory die bonded to both sides of a support die and methods of making the same |
US10879260B2 (en) | 2019-02-28 | 2020-12-29 | Sandisk Technologies Llc | Bonded assembly of a support die and plural memory dies containing laterally shifted vertical interconnections and methods for making the same |
CN111175892A (zh) * | 2020-01-07 | 2020-05-19 | 电子科技大学 | 一种铌酸锂光波导器件及其制备方法 |
JP7331208B2 (ja) * | 2020-01-20 | 2023-08-22 | 日本碍子株式会社 | 電気光学素子のための複合基板とその製造方法 |
CN112924741B (zh) * | 2021-01-25 | 2022-03-11 | 重庆大学 | 基于微环耦合马赫曾德尔结构的电压测量系统及测量方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5943464A (en) * | 1997-02-07 | 1999-08-24 | Khodja; Salah | Nonlinear optical device including poled waveguide and associated fabrication methods |
US6540827B1 (en) * | 1998-02-17 | 2003-04-01 | Trustees Of Columbia University In The City Of New York | Slicing of single-crystal films using ion implantation |
US6078605A (en) * | 1998-02-20 | 2000-06-20 | Massachusetts Institute Of Technology | Track-changing utilizing phase response of resonators |
US6195187B1 (en) * | 1998-07-07 | 2001-02-27 | The United States Of America As Represented By The Secretary Of The Air Force | Wavelength-division multiplexed M×N×M cross-connect switch using active microring resonators |
US6706546B2 (en) * | 1998-10-09 | 2004-03-16 | Fujitsu Limited | Optical reflective structures and method for making |
US6411752B1 (en) * | 1999-02-22 | 2002-06-25 | Massachusetts Institute Of Technology | Vertically coupled optical resonator devices over a cross-grid waveguide architecture |
SE517440C2 (sv) * | 2000-06-20 | 2002-06-04 | Ericsson Telefon Ab L M | Elektriskt avstämbar anordning och ett förfarande relaterande därtill |
US6665476B2 (en) * | 2000-09-29 | 2003-12-16 | Sarnoff Corporation | Wavelength selective optical add/drop multiplexer and method of manufacture |
US6661950B1 (en) * | 2001-01-10 | 2003-12-09 | Nomadics, Inc. | Microresonator-based tuned optical filter |
US7082268B2 (en) * | 2001-05-31 | 2006-07-25 | Teradvance Communications, Llc | Method and system for 80 and 160 gigabit-per-second QRZ transmission in 100 GHz optical bandwidth with enhanced receiver performance |
US6593212B1 (en) * | 2001-10-29 | 2003-07-15 | The United States Of America As Represented By The Secretary Of The Navy | Method for making electro-optical devices using a hydrogenion splitting technique |
US6767749B2 (en) * | 2002-04-22 | 2004-07-27 | The United States Of America As Represented By The Secretary Of The Navy | Method for making piezoelectric resonator and surface acoustic wave device using hydrogen implant layer splitting |
US6819837B2 (en) * | 2002-05-31 | 2004-11-16 | Matsushita Electric Industrial Co., Ltd. | Method of temporarily adjusting the index of refraction of ring resonator with precision laser micromachining |
-
2004
- 2004-06-17 EP EP04736974A patent/EP1714317B1/de not_active Expired - Lifetime
- 2004-06-17 AT AT04736974T patent/ATE397233T1/de not_active IP Right Cessation
- 2004-06-17 US US10/597,052 patent/US20080165565A1/en not_active Abandoned
- 2004-06-17 WO PCT/CH2004/000365 patent/WO2005067031A1/en active IP Right Grant
- 2004-06-17 DE DE602004014197T patent/DE602004014197D1/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
WO2005067031A1 (en) | 2005-07-21 |
ATE397233T1 (de) | 2008-06-15 |
EP1714317A1 (de) | 2006-10-25 |
US20080165565A1 (en) | 2008-07-10 |
EP1714317B1 (de) | 2008-05-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |