DE602004007014D1 - Optisches verfahren und einrichtung zur texturquantifizierung photovoltaischer zellen - Google Patents
Optisches verfahren und einrichtung zur texturquantifizierung photovoltaischer zellenInfo
- Publication number
- DE602004007014D1 DE602004007014D1 DE602004007014T DE602004007014T DE602004007014D1 DE 602004007014 D1 DE602004007014 D1 DE 602004007014D1 DE 602004007014 T DE602004007014 T DE 602004007014T DE 602004007014 T DE602004007014 T DE 602004007014T DE 602004007014 D1 DE602004007014 D1 DE 602004007014D1
- Authority
- DE
- Germany
- Prior art keywords
- texture
- quantification
- photovoltaic cells
- optical method
- texturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/30—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N2021/4735—Solid samples, e.g. paper, glass
Landscapes
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Photovoltaic Devices (AREA)
- Silicon Compounds (AREA)
- Hybrid Cells (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ES200301666A ES2235608B1 (es) | 2003-07-15 | 2003-07-15 | Metodo optico y dispositivo para la cuantificacion de la textura en celulas fotovoltaicas. |
ES200301666 | 2003-07-15 | ||
PCT/ES2004/070050 WO2005008175A1 (es) | 2003-07-15 | 2004-07-14 | Método óptico y dispositivo para la cuantificación de la textura en células fotovoltaicas |
Publications (2)
Publication Number | Publication Date |
---|---|
DE602004007014D1 true DE602004007014D1 (de) | 2007-07-26 |
DE602004007014T2 DE602004007014T2 (de) | 2008-02-14 |
Family
ID=34072908
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602004007014T Expired - Fee Related DE602004007014T2 (de) | 2003-07-15 | 2004-07-14 | Optisches verfahren und einrichtung zur texturquantifizierung photovoltaischer zellen |
Country Status (8)
Country | Link |
---|---|
US (1) | US20060268283A1 (de) |
EP (1) | EP1662227B1 (de) |
JP (1) | JP2007528997A (de) |
CN (1) | CN100419377C (de) |
AT (1) | ATE364830T1 (de) |
DE (1) | DE602004007014T2 (de) |
ES (1) | ES2235608B1 (de) |
WO (1) | WO2005008175A1 (de) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7742171B2 (en) * | 2007-08-06 | 2010-06-22 | Ci Systems Ltd. | Reflectivity/emissivity measurement probe insensitive to variations in probe-to-target distance |
US8378661B1 (en) | 2008-05-29 | 2013-02-19 | Alpha-Omega Power Technologies, Ltd.Co. | Solar simulator |
GB0816047D0 (en) * | 2008-09-04 | 2008-10-08 | Rolls Royce Plc | Crystallographic orientation measurement |
DE102009044458B4 (de) * | 2009-11-06 | 2021-03-04 | Hanwha Q.CELLS GmbH | Analyseverfahren zum Analysieren eines Halbleiterwafers |
DE102010011056A1 (de) | 2010-03-11 | 2011-09-15 | Jörg Bischoff | Verfahren und Anordnung zur quantitativen, optischen Messung der Oberflächentextur |
DE102010029133A1 (de) * | 2010-05-19 | 2011-11-24 | Robert Bosch Gmbh | Verfahren und Vorrichtung zur Charakterisierung von pyramidalen Oberflächenstrukturen auf einem Substrat |
JP2013002900A (ja) * | 2011-06-15 | 2013-01-07 | Mitsubishi Electric Corp | エリプソメーター装置および単結晶シリコンに形成された反射防止膜の測定方法 |
DE102012012156B4 (de) | 2012-06-19 | 2014-05-15 | Audiodev Gmbh | Verfahren zum optischen vermessen von pyramiden auf texturierten monokristallinen siliziumwafern |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4137123A (en) * | 1975-12-31 | 1979-01-30 | Motorola, Inc. | Texture etching of silicon: method |
JPS58111743A (ja) * | 1981-12-26 | 1983-07-02 | Toshiba Corp | ボンディング性評価方法 |
JPS58140609A (ja) * | 1982-02-17 | 1983-08-20 | Toshiba Corp | 表面状態評価装置 |
JPH0739946B2 (ja) * | 1987-08-26 | 1995-05-01 | 株式会社豊田中央研究所 | 表面状態検査装置 |
US6118525A (en) * | 1995-03-06 | 2000-09-12 | Ade Optical Systems Corporation | Wafer inspection system for distinguishing pits and particles |
WO1997046865A1 (en) * | 1996-06-04 | 1997-12-11 | Tencor Instruments | Optical scanning system for surface inspection |
JP3257413B2 (ja) * | 1996-09-10 | 2002-02-18 | 松下電器産業株式会社 | レーザ加工装置及びレーザ加工方法 |
TW482898B (en) * | 1996-12-04 | 2002-04-11 | Ade Optical Syst Corp | A surface inspection system and method for distinguishing between particle defects and pit defects on a surface of a workpiece. |
DE19811878C2 (de) * | 1998-03-18 | 2002-09-19 | Siemens Solar Gmbh | Verfahren und Ätzlösung zum naßchemischen pyramidalen Texturätzen von Siliziumoberflächen |
SE514309C2 (sv) * | 1999-05-28 | 2001-02-05 | Ericsson Telefon Ab L M | Förfarande för att bestämma ytstruktur |
US6778273B2 (en) * | 2001-03-30 | 2004-08-17 | Therma-Wave, Inc. | Polarimetric scatterometer for critical dimension measurements of periodic structures |
US7280230B2 (en) * | 2001-12-19 | 2007-10-09 | Kla-Tencor Technologies Corporation | Parametric profiling using optical spectroscopic systems |
-
2003
- 2003-07-15 ES ES200301666A patent/ES2235608B1/es not_active Expired - Fee Related
-
2004
- 2004-07-14 DE DE602004007014T patent/DE602004007014T2/de not_active Expired - Fee Related
- 2004-07-14 WO PCT/ES2004/070050 patent/WO2005008175A1/es active IP Right Grant
- 2004-07-14 CN CNB2004800263463A patent/CN100419377C/zh not_active Expired - Fee Related
- 2004-07-14 JP JP2006519940A patent/JP2007528997A/ja active Pending
- 2004-07-14 AT AT04742088T patent/ATE364830T1/de not_active IP Right Cessation
- 2004-07-14 EP EP04742088A patent/EP1662227B1/de not_active Not-in-force
-
2006
- 2006-01-12 US US11/330,706 patent/US20060268283A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
ES2235608A1 (es) | 2005-07-01 |
DE602004007014T2 (de) | 2008-02-14 |
US20060268283A1 (en) | 2006-11-30 |
CN100419377C (zh) | 2008-09-17 |
JP2007528997A (ja) | 2007-10-18 |
CN1871495A (zh) | 2006-11-29 |
ES2235608B1 (es) | 2006-11-01 |
EP1662227A1 (de) | 2006-05-31 |
EP1662227B1 (de) | 2007-06-13 |
ATE364830T1 (de) | 2007-07-15 |
WO2005008175A1 (es) | 2005-01-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
ATE478439T1 (de) | Verfahren zur rauhätzung von siliziumsolarzellen | |
AU2003242229A1 (en) | Method for producing polycrystalline silicon substrate for solar cell | |
CN101728247B (zh) | 具有载流子寿命的自支撑厚度的单晶材料和方法 | |
WO2010062343A3 (en) | Thin two sided single crystal solar cell and manufacturing process thereof | |
SI1989740T1 (sl) | Postopek označevanja sončnih celic in sončna celica | |
TWI265984B (en) | Silicon single crystal wafer for epitaxial wafer, epitaxial wafer, and methods for producing the same and evaluating the same | |
DE602004007014D1 (de) | Optisches verfahren und einrichtung zur texturquantifizierung photovoltaischer zellen | |
ATE465517T1 (de) | Verfahren zur herstellung einer solarzelle | |
ATE525500T1 (de) | Verfahren zur herstellung von diamantsubstraten | |
Tan et al. | On the electronic improvement of multi‐crystalline silicon via gettering and hydrogenation | |
Wu et al. | Effect of crystal defects on mechanical properties relevant to cutting of multicrystalline solar silicon | |
Osinniy et al. | Gettering improvements of minority-carrier lifetimes in solar grade silicon | |
SG144883A1 (en) | Method and structure using selected implant angles using a linear accelerator process for manufacture of free standing films of materials | |
ATE514193T1 (de) | Verfahren zum texturieren von siliziumwafern zur herstellung von solarzellen | |
Kaule et al. | Improved mechanical strength and reflectance of diamond wire sawn multi-crystalline silicon wafers by inductively coupled plasma (ICP) etching | |
EP2048696A3 (de) | Verfahren zur Herstellung von Siliziumwafern für Solarzellen | |
MX2009011501A (es) | Modulo fotovoltaico que comprende una capa con puntos conductores. | |
AU2003206139A1 (en) | Process of producing multicrystalline silicon substrate and solar cell | |
WO2004055528A3 (en) | Apparatus and method for electrical characterization of semiconductors | |
CN107607494A (zh) | 一种晶态硅片金属杂质含量检测方法 | |
Kivambe et al. | Characterization of high-quality kerfless epitaxial silicon for solar cells: Defect sources and impact on minority-carrier lifetime | |
Janz et al. | n-type and p-type silicon foils fabricated in a quasi-inline epi reactor with bulk lifetimes exceeding 500 µs | |
Radhakrishnan et al. | Lifetime measurements on attached epilayers and detached epifoils grown on reorganised porous silicon showing a bulk lifetime exceeding 100 μs | |
Damiani et al. | Light induced degradation in promising multi-crystalline silicon materials for solar cell fabrication | |
Han et al. | Enhanced performance of EFG silicon solar cells by using vapor texturing process |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |