DE60143691D1 - Verfahren zum bearbeiten einen zielbereich in einem teilchenstrahlsysteme - Google Patents

Verfahren zum bearbeiten einen zielbereich in einem teilchenstrahlsysteme

Info

Publication number
DE60143691D1
DE60143691D1 DE60143691T DE60143691T DE60143691D1 DE 60143691 D1 DE60143691 D1 DE 60143691D1 DE 60143691 T DE60143691 T DE 60143691T DE 60143691 T DE60143691 T DE 60143691T DE 60143691 D1 DE60143691 D1 DE 60143691D1
Authority
DE
Germany
Prior art keywords
processing
target area
ray systems
particular ray
systems
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60143691T
Other languages
English (en)
Inventor
Richard F Schuman
Kathryn Noll
David J Casey
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
FEI Co
Original Assignee
FEI Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by FEI Co filed Critical FEI Co
Application granted granted Critical
Publication of DE60143691D1 publication Critical patent/DE60143691D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G03F1/74—Repair or correction of mask defects by charged particle beam [CPB], e.g. focused ion beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching for microworking, e.g. etching of gratings, trimming of electrical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H01J2237/31742—Etching microareas for repairing masks
    • H01J2237/31744—Etching microareas for repairing masks introducing gas in vicinity of workpiece

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Electron Sources, Ion Sources (AREA)
DE60143691T 2000-03-10 2001-03-12 Verfahren zum bearbeiten einen zielbereich in einem teilchenstrahlsysteme Expired - Lifetime DE60143691D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/522,561 US6322672B1 (en) 2000-03-10 2000-03-10 Method and apparatus for milling copper interconnects in a charged particle beam system
PCT/EP2001/002748 WO2001067502A2 (en) 2000-03-10 2001-03-12 Method and apparatus for milling copper interconnects in a charged particle beam system

Publications (1)

Publication Number Publication Date
DE60143691D1 true DE60143691D1 (de) 2011-02-03

Family

ID=24081356

Family Applications (2)

Application Number Title Priority Date Filing Date
DE60128659T Expired - Lifetime DE60128659T2 (de) 2000-03-10 2001-03-09 Verfahren zur reparatur von lithographischen masken unter verwendung eines strahls geladener teilchen
DE60143691T Expired - Lifetime DE60143691D1 (de) 2000-03-10 2001-03-12 Verfahren zum bearbeiten einen zielbereich in einem teilchenstrahlsysteme

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE60128659T Expired - Lifetime DE60128659T2 (de) 2000-03-10 2001-03-09 Verfahren zur reparatur von lithographischen masken unter verwendung eines strahls geladener teilchen

Country Status (6)

Country Link
US (2) US6322672B1 (de)
EP (2) EP1261752B1 (de)
JP (2) JP4728553B2 (de)
AU (1) AU2001240136A1 (de)
DE (2) DE60128659T2 (de)
WO (2) WO2001068938A1 (de)

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US6322672B1 (en) 2000-03-10 2001-11-27 Fei Company Method and apparatus for milling copper interconnects in a charged particle beam system
US6407001B1 (en) 2000-06-30 2002-06-18 Intel Corporation Focused ion beam etching of copper
US20060051508A1 (en) * 2000-12-28 2006-03-09 Ilan Gavish Focused ion beam deposition
US6492261B2 (en) * 2000-12-30 2002-12-10 Intel Corporation Focused ion beam metal deposition
US6638580B2 (en) * 2000-12-29 2003-10-28 Intel Corporation Apparatus and a method for forming an alloy layer over a substrate using an ion beam
US6514866B2 (en) * 2001-01-12 2003-02-04 North Carolina State University Chemically enhanced focused ion beam micro-machining of copper
US6730237B2 (en) * 2001-06-22 2004-05-04 International Business Machines Corporation Focused ion beam process for removal of copper
WO2003019629A2 (en) 2001-08-27 2003-03-06 Nptest, Inc. Process for charged particle beam micro-machining of copper
US6888150B2 (en) 2001-12-13 2005-05-03 Sony International (Europe) Gmbh Method for defect and conductivity engineering of a conducting nanoscaled structure
EP1320117A3 (de) * 2001-12-13 2003-11-26 Sony International (Europe) GmbH Verfahren zur Defekt- und Leitfähigkeitsverarbeitung einer leitenden Nanostruktur
US7279046B2 (en) * 2002-03-27 2007-10-09 Nanoink, Inc. Method and apparatus for aligning patterns on a substrate
US6933081B2 (en) * 2002-05-15 2005-08-23 Micron Technology, Inc. Method for quartz bump defect repair with less substrate damage
DE10230755A1 (de) * 2002-07-09 2004-01-22 Carl Zeiss Jena Gmbh Anordnung zur Herstellung von Photomasken
US20040121069A1 (en) * 2002-08-08 2004-06-24 Ferranti David C. Repairing defects on photomasks using a charged particle beam and topographical data from a scanning probe microscope
US7150811B2 (en) * 2002-11-26 2006-12-19 Pei Company Ion beam for target recovery
US20040132287A1 (en) * 2003-01-07 2004-07-08 International Business Machines Corporation Dry etch process for copper
KR101159337B1 (ko) * 2003-01-16 2012-06-22 에프이아이 컴파니 마스크 수정을 위한 전자 빔 프로세싱
US6863787B2 (en) * 2003-04-02 2005-03-08 Fei Company Dummy copper deprocessing
US7060196B2 (en) * 2003-10-03 2006-06-13 Credence Systems Corporation FIB milling of copper over organic dielectrics
US20060099519A1 (en) 2004-11-10 2006-05-11 Moriarty Michael H Method of depositing a material providing a specified attenuation and phase shift
DE102005004070B3 (de) * 2005-01-28 2006-08-03 Infineon Technologies Ag Verfahren zum Entfernen von Defektmaterial einer Lithographiemaske
US7388218B2 (en) * 2005-04-04 2008-06-17 Fei Company Subsurface imaging using an electron beam
US7670956B2 (en) * 2005-04-08 2010-03-02 Fei Company Beam-induced etching
CN101176040A (zh) * 2005-04-14 2008-05-07 哈佛大学 用于微制造的牺牲层中可调整的溶解度
DE102006043874B4 (de) * 2006-09-15 2020-07-09 Carl Zeiss Smt Gmbh Verfahren und Vorrichtung zur Reparatur von Photolithographiemasken
WO2008051937A2 (en) * 2006-10-20 2008-05-02 Fei Company Method for creating s/tem sample and sample structure
WO2008051880A2 (en) 2006-10-20 2008-05-02 Fei Company Method and apparatus for sample extraction and handling
TWI479570B (zh) * 2007-12-26 2015-04-01 Nawotec Gmbh 從樣本移除材料之方法及系統
US7880151B2 (en) * 2008-02-28 2011-02-01 Fei Company Beam positioning for beam processing
US8778804B2 (en) * 2009-01-30 2014-07-15 Fei Company High selectivity, low damage electron-beam delineation etch
KR101699995B1 (ko) * 2009-06-18 2017-01-26 호야 가부시키가이샤 마스크 블랭크 및 전사용 마스크와 전사용 마스크의 제조 방법
EP2610889A3 (de) 2011-12-27 2015-05-06 Fei Company Kontrolle der Drift in einem Strahlsystem geladener Teilchen
JP5949257B2 (ja) * 2012-07-19 2016-07-06 株式会社ソシオネクスト 配線加工方法
US10465293B2 (en) * 2012-08-31 2019-11-05 Fei Company Dose-based end-pointing for low-kV FIB milling TEM sample preparation
EP3104155A1 (de) 2015-06-09 2016-12-14 FEI Company Verfahren zur analyse von oberflächenmodifikationen einer probe in eines ladungsträger-mikroskop
US10103008B2 (en) 2016-01-12 2018-10-16 Fei Company Charged particle beam-induced etching
DE102019201468A1 (de) * 2019-02-05 2020-08-06 Carl Zeiss Smt Gmbh Vorrichtung und Verfahren zum Reparieren einer fotolithographischen Maske
DE102020208183A1 (de) * 2020-06-30 2021-12-30 Carl Zeiss Smt Gmbh Verfahren und vorrichtung zum bearbeiten einer lithographischen maske
DE102021123440A1 (de) * 2021-09-10 2023-03-16 Carl Zeiss Smt Gmbh Verfahren zum Teilchenstrahl-induzierten Bearbeiten eines Defekts einer Photomaske für die Mikrolithographie

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US5228501A (en) * 1986-12-19 1993-07-20 Applied Materials, Inc. Physical vapor deposition clamping mechanism and heater/cooler
JPS6476412A (en) * 1987-09-17 1989-03-22 Fuji Photo Film Co Ltd Production of thin film magnetic head
WO1989004052A1 (en) * 1987-10-22 1989-05-05 Oxford Instruments Limited Exposing substrates to ion beams
JP2799861B2 (ja) * 1987-11-16 1998-09-21 セイコーインスツルメンツ株式会社 パターン膜修正方法
US4874460A (en) * 1987-11-16 1989-10-17 Seiko Instruments Inc. Method and apparatus for modifying patterned film
JPH01280759A (ja) * 1988-05-06 1989-11-10 Seiko Instr Inc パターン膜除去方法
US4874947A (en) * 1988-02-26 1989-10-17 Micrion Corporation Focused ion beam imaging and process control
JPH088245B2 (ja) * 1990-09-28 1996-01-29 株式会社島津製作所 集束イオンビームエッチング装置
JP3117836B2 (ja) * 1993-03-02 2000-12-18 セイコーインスツルメンツ株式会社 集束イオンビーム装置
US5958799A (en) * 1995-04-13 1999-09-28 North Carolina State University Method for water vapor enhanced charged-particle-beam machining
US5851413A (en) 1996-06-19 1998-12-22 Micrion Corporation Gas delivery systems for particle beam processing
US6042738A (en) * 1997-04-16 2000-03-28 Micrion Corporation Pattern film repair using a focused particle beam system
US6268608B1 (en) 1998-10-09 2001-07-31 Fei Company Method and apparatus for selective in-situ etching of inter dielectric layers
EP1183722A1 (de) * 2000-03-10 2002-03-06 Fei Company Apparat und methode zur veringerung der differentiellen sputter-raten
US6322672B1 (en) 2000-03-10 2001-11-27 Fei Company Method and apparatus for milling copper interconnects in a charged particle beam system

Also Published As

Publication number Publication date
US20010027917A1 (en) 2001-10-11
JP4728553B2 (ja) 2011-07-20
US6322672B1 (en) 2001-11-27
DE60128659D1 (de) 2007-07-12
EP1261752A4 (de) 2006-06-07
JP2003527629A (ja) 2003-09-16
AU2001240136A1 (en) 2001-09-24
DE60128659T2 (de) 2008-02-07
US6709554B2 (en) 2004-03-23
WO2001067502A2 (en) 2001-09-13
EP1200988A2 (de) 2002-05-02
JP5095897B2 (ja) 2012-12-12
WO2001067502A3 (en) 2002-02-21
EP1261752B1 (de) 2007-05-30
WO2001068938A1 (en) 2001-09-20
EP1200988B1 (de) 2010-12-22
EP1261752A1 (de) 2002-12-04
JP2003526919A (ja) 2003-09-09

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