DE60143646D1 - Verfahren zur herstellung einer ladungsgekoppelten bildaufnahmevorrichtung - Google Patents

Verfahren zur herstellung einer ladungsgekoppelten bildaufnahmevorrichtung

Info

Publication number
DE60143646D1
DE60143646D1 DE60143646T DE60143646T DE60143646D1 DE 60143646 D1 DE60143646 D1 DE 60143646D1 DE 60143646 T DE60143646 T DE 60143646T DE 60143646 T DE60143646 T DE 60143646T DE 60143646 D1 DE60143646 D1 DE 60143646D1
Authority
DE
Germany
Prior art keywords
load
producing
recording device
image recording
coupled image
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60143646T
Other languages
English (en)
Inventor
Hermanus L Peek
Daniel W Verbugt
Monique J Beenhakkers
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dalsa Inc
Original Assignee
Dalsa Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dalsa Inc filed Critical Dalsa Inc
Application granted granted Critical
Publication of DE60143646D1 publication Critical patent/DE60143646D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66946—Charge transfer devices
    • H01L29/66954—Charge transfer devices with an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14806—Structural or functional details thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
DE60143646T 2000-06-27 2001-06-20 Verfahren zur herstellung einer ladungsgekoppelten bildaufnahmevorrichtung Expired - Lifetime DE60143646D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP00202247 2000-06-27
PCT/EP2001/007011 WO2002001602A2 (en) 2000-06-27 2001-06-20 Method of manufacturing a charge-coupled image sensor

Publications (1)

Publication Number Publication Date
DE60143646D1 true DE60143646D1 (de) 2011-01-27

Family

ID=8171708

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60143646T Expired - Lifetime DE60143646D1 (de) 2000-06-27 2001-06-20 Verfahren zur herstellung einer ladungsgekoppelten bildaufnahmevorrichtung

Country Status (6)

Country Link
US (1) US20020022296A1 (de)
EP (1) EP1269544B1 (de)
JP (1) JP2004502297A (de)
KR (1) KR20020059377A (de)
DE (1) DE60143646D1 (de)
WO (1) WO2002001602A2 (de)

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3699646A (en) * 1970-12-28 1972-10-24 Intel Corp Integrated circuit structure and method for making integrated circuit structure
US3927468A (en) * 1973-12-28 1975-12-23 Fairchild Camera Instr Co Self aligned CCD element fabrication method therefor
US4593303A (en) * 1981-07-10 1986-06-03 Fairchild Camera & Instrument Corporation Self-aligned antiblooming structure for charge-coupled devices
JPS61203670A (ja) * 1985-03-07 1986-09-09 Toshiba Corp 固体撮像装置の製造方法
JPH0316232A (ja) * 1989-06-14 1991-01-24 Matsushita Electron Corp 電荷結合素子の製造方法
JPH0567767A (ja) * 1991-03-06 1993-03-19 Matsushita Electron Corp 固体撮像装置およびその製造方法
JP2976585B2 (ja) * 1991-05-10 1999-11-10 ソニー株式会社 半導体装置の製造方法
JPH05267637A (ja) * 1992-03-21 1993-10-15 Sharp Corp 固体撮像素子の製造方法
US5556801A (en) * 1995-01-23 1996-09-17 Eastman Kodak Company Method of making a planar charge coupled device with edge aligned implants and interconnected electrodes
US5702971A (en) * 1995-03-31 1997-12-30 Eastman Kodak Company Self-aligned LOD antiblooming structure for solid-state imagers
US5880777A (en) * 1996-04-15 1999-03-09 Massachusetts Institute Of Technology Low-light-level imaging and image processing
WO1998011608A1 (en) * 1996-09-10 1998-03-19 Philips Electronics N.V. Charge coupled device, and method of manufacturing such a device
US5972804A (en) * 1997-08-05 1999-10-26 Motorola, Inc. Process for forming a semiconductor device
US6331873B1 (en) * 1998-12-03 2001-12-18 Massachusetts Institute Of Technology High-precision blooming control structure formation for an image sensor
US6127234A (en) * 1999-01-07 2000-10-03 Advanced Micro Devices, Inc. Ultra shallow extension formation using disposable spacers

Also Published As

Publication number Publication date
WO2002001602A2 (en) 2002-01-03
JP2004502297A (ja) 2004-01-22
US20020022296A1 (en) 2002-02-21
KR20020059377A (ko) 2002-07-12
EP1269544A2 (de) 2003-01-02
EP1269544B1 (de) 2010-12-15
WO2002001602A3 (en) 2002-05-10

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