DE60138239D1 - Plasmabehandlungsgerät - Google Patents
PlasmabehandlungsgerätInfo
- Publication number
- DE60138239D1 DE60138239D1 DE60138239T DE60138239T DE60138239D1 DE 60138239 D1 DE60138239 D1 DE 60138239D1 DE 60138239 T DE60138239 T DE 60138239T DE 60138239 T DE60138239 T DE 60138239T DE 60138239 D1 DE60138239 D1 DE 60138239D1
- Authority
- DE
- Germany
- Prior art keywords
- treatment device
- plasma treatment
- plasma
- treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000009832 plasma treatment Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000081735A JP2001267305A (ja) | 2000-03-17 | 2000-03-17 | プラズマ処理装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60138239D1 true DE60138239D1 (de) | 2009-05-20 |
Family
ID=18598629
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60138239T Expired - Lifetime DE60138239D1 (de) | 2000-03-17 | 2001-02-27 | Plasmabehandlungsgerät |
Country Status (6)
Country | Link |
---|---|
US (1) | US6755935B2 (de) |
EP (1) | EP1134774B1 (de) |
JP (1) | JP2001267305A (de) |
KR (1) | KR20010091903A (de) |
DE (1) | DE60138239D1 (de) |
TW (1) | TWI221754B (de) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3591642B2 (ja) * | 2001-02-07 | 2004-11-24 | 株式会社日立製作所 | プラズマ処理装置 |
JP4753276B2 (ja) * | 2002-11-26 | 2011-08-24 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
JP2005033055A (ja) * | 2003-07-08 | 2005-02-03 | Canon Inc | 放射状スロットに円弧状スロットを併設したマルチスロットアンテナを用いた表面波プラズマ処理装置 |
US7464662B2 (en) * | 2004-01-28 | 2008-12-16 | Tokyo Electron Limited | Compact, distributed inductive element for large scale inductively-coupled plasma sources |
US7318947B1 (en) | 2004-08-31 | 2008-01-15 | Western Digital (Fremont), Llc | Method and apparatus for controlling magnetostriction in a spin valve sensor |
KR100737358B1 (ko) * | 2004-12-08 | 2007-07-09 | 한국전자통신연구원 | 음성/비음성 검증 방법 및 이를 이용한 음성 인식 장치 |
JP4628900B2 (ja) | 2005-08-24 | 2011-02-09 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
WO2008093389A1 (ja) * | 2007-01-29 | 2008-08-07 | Sumitomo Electric Industries, Ltd. | マイクロ波プラズマcvd装置 |
DE102009015178B4 (de) * | 2009-03-19 | 2012-09-06 | Forschungs- Und Applikationslabor Plasmatechnik Gmbh Dresden | Vorrichtung und Verfahren für die plasmagestützte Oberflächenmodifizierung von Substraten im Vakuum |
KR101255720B1 (ko) * | 2009-10-16 | 2013-04-17 | 주성엔지니어링(주) | 유도 결합 플라즈마 장치 |
JP5702968B2 (ja) | 2010-08-11 | 2015-04-15 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ制御方法 |
GB201021865D0 (en) | 2010-12-23 | 2011-02-02 | Element Six Ltd | A microwave plasma reactor for manufacturing synthetic diamond material |
GB201021860D0 (en) | 2010-12-23 | 2011-02-02 | Element Six Ltd | A microwave plasma reactor for diamond synthesis |
GB201021913D0 (en) | 2010-12-23 | 2011-02-02 | Element Six Ltd | Microwave plasma reactors and substrates for synthetic diamond manufacture |
GB201021855D0 (en) | 2010-12-23 | 2011-02-02 | Element Six Ltd | Microwave power delivery system for plasma reactors |
JP5913362B2 (ja) | 2010-12-23 | 2016-04-27 | エレメント シックス リミテッド | 合成ダイヤモンド材料のドーピングの制御 |
GB201021870D0 (en) | 2010-12-23 | 2011-02-02 | Element Six Ltd | A microwave plasma reactor for manufacturing synthetic diamond material |
GB201021853D0 (en) | 2010-12-23 | 2011-02-02 | Element Six Ltd | A microwave plasma reactor for manufacturing synthetic diamond material |
US20190244793A1 (en) * | 2018-02-05 | 2019-08-08 | Lam Research Corporation | Tapered upper electrode for uniformity control in plasma processing |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4342901A (en) * | 1980-08-11 | 1982-08-03 | Eaton Corporation | Plasma etching electrode |
US6251792B1 (en) * | 1990-07-31 | 2001-06-26 | Applied Materials, Inc. | Plasma etch processes |
DE4109619C1 (de) * | 1991-03-23 | 1992-08-06 | Leybold Ag, 6450 Hanau, De | |
JP2641390B2 (ja) * | 1994-05-12 | 1997-08-13 | 日本電気株式会社 | プラズマ処理装置 |
JP3107971B2 (ja) * | 1994-05-17 | 2000-11-13 | 株式会社半導体エネルギー研究所 | 気相反応装置 |
JP3257328B2 (ja) * | 1995-03-16 | 2002-02-18 | 株式会社日立製作所 | プラズマ処理装置及びプラズマ処理方法 |
US5716451A (en) * | 1995-08-17 | 1998-02-10 | Tokyo Electron Limited | Plasma processing apparatus |
TW312815B (de) | 1995-12-15 | 1997-08-11 | Hitachi Ltd | |
US5683548A (en) * | 1996-02-22 | 1997-11-04 | Motorola, Inc. | Inductively coupled plasma reactor and process |
JPH10134995A (ja) * | 1996-10-28 | 1998-05-22 | Toshiba Corp | プラズマ処理装置及びプラズマ処理方法 |
TW403959B (en) * | 1996-11-27 | 2000-09-01 | Hitachi Ltd | Plasma treatment device |
US5824607A (en) * | 1997-02-06 | 1998-10-20 | Applied Materials, Inc. | Plasma confinement for an inductively coupled plasma reactor |
US6035868A (en) * | 1997-03-31 | 2000-03-14 | Lam Research Corporation | Method and apparatus for control of deposit build-up on an inner surface of a plasma processing chamber |
US6028394A (en) * | 1998-03-24 | 2000-02-22 | International Business Machines Corporation | Cold electron plasma reactive ion etching using a rotating electromagnetic filter |
JP2001023959A (ja) * | 1999-07-05 | 2001-01-26 | Mitsubishi Electric Corp | プラズマ処理装置 |
JP2002075969A (ja) * | 2000-08-25 | 2002-03-15 | Hitachi Ltd | プラズマ処理装置 |
-
2000
- 2000-03-17 JP JP2000081735A patent/JP2001267305A/ja active Pending
-
2001
- 2001-01-31 TW TW090101926A patent/TWI221754B/zh not_active IP Right Cessation
- 2001-02-22 KR KR1020010008965A patent/KR20010091903A/ko not_active Application Discontinuation
- 2001-02-27 DE DE60138239T patent/DE60138239D1/de not_active Expired - Lifetime
- 2001-02-27 US US09/793,443 patent/US6755935B2/en not_active Expired - Fee Related
- 2001-02-27 EP EP01104803A patent/EP1134774B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR20010091903A (ko) | 2001-10-23 |
JP2001267305A (ja) | 2001-09-28 |
US20010023663A1 (en) | 2001-09-27 |
EP1134774B1 (de) | 2009-04-08 |
US6755935B2 (en) | 2004-06-29 |
EP1134774A2 (de) | 2001-09-19 |
EP1134774A3 (de) | 2005-01-19 |
TWI221754B (en) | 2004-10-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |