DE60130947D1 - Kondensatorherstellung mit metallischen Elektroden - Google Patents

Kondensatorherstellung mit metallischen Elektroden

Info

Publication number
DE60130947D1
DE60130947D1 DE60130947T DE60130947T DE60130947D1 DE 60130947 D1 DE60130947 D1 DE 60130947D1 DE 60130947 T DE60130947 T DE 60130947T DE 60130947 T DE60130947 T DE 60130947T DE 60130947 D1 DE60130947 D1 DE 60130947D1
Authority
DE
Germany
Prior art keywords
capacitor manufacturing
metallic electrodes
metallic
electrodes
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60130947T
Other languages
English (en)
Other versions
DE60130947T2 (de
Inventor
Vincent Arnal
Joaquim Torres
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Application granted granted Critical
Publication of DE60130947D1 publication Critical patent/DE60130947D1/de
Publication of DE60130947T2 publication Critical patent/DE60130947T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE60130947T 2000-08-17 2001-08-16 Kondensatorherstellung mit metallischen Elektroden Expired - Lifetime DE60130947T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0010697A FR2813142B1 (fr) 2000-08-17 2000-08-17 Fabrication de condensateurs a armatures metalliques
FR0010697 2000-08-17

Publications (2)

Publication Number Publication Date
DE60130947D1 true DE60130947D1 (de) 2007-11-29
DE60130947T2 DE60130947T2 (de) 2008-07-31

Family

ID=8853575

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60130947T Expired - Lifetime DE60130947T2 (de) 2000-08-17 2001-08-16 Kondensatorherstellung mit metallischen Elektroden

Country Status (4)

Country Link
US (1) US6706589B2 (de)
EP (1) EP1180790B1 (de)
DE (1) DE60130947T2 (de)
FR (1) FR2813142B1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100485910B1 (ko) 2003-06-20 2005-04-29 삼성전자주식회사 고내압 모스 트랜지스터 및 그 제조 방법
KR100555514B1 (ko) * 2003-08-22 2006-03-03 삼성전자주식회사 저 저항 텅스텐 배선을 갖는 반도체 메모리 소자 및 그제조방법
KR100617057B1 (ko) 2004-12-30 2006-08-30 동부일렉트로닉스 주식회사 커패시터 구조 및 그 제조방법
US8085522B2 (en) * 2007-06-26 2011-12-27 Headway Technologies, Inc. Capacitor and method of manufacturing the same and capacitor unit
US9305920B2 (en) * 2013-07-18 2016-04-05 Taiwan Semiconductor Manufacturing Company, Ltd. High voltage metal-oxide-metal (HV-MOM) device, HV-MOM layout and method of making the HV-MOM device

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5162248A (en) * 1992-03-13 1992-11-10 Micron Technology, Inc. Optimized container stacked capacitor DRAM cell utilizing sacrificial oxide deposition and chemical mechanical polishing
US5270241A (en) * 1992-03-13 1993-12-14 Micron Technology, Inc. Optimized container stacked capacitor DRAM cell utilizing sacrificial oxide deposition and chemical mechanical polishing
KR960003498B1 (ko) * 1992-06-18 1996-03-14 금성일렉트론주식회사 반도체장치의 캐패시터 제조방법
US5392189A (en) * 1993-04-02 1995-02-21 Micron Semiconductor, Inc. Capacitor compatible with high dielectric constant materials having two independent insulative layers and the method for forming same
US5677227A (en) * 1996-09-09 1997-10-14 Vanguard International Semiconductor Corporation Method of fabricating single crown, extendible to triple crown, stacked capacitor structures, using a self-aligned capacitor node contact
EP0862203A1 (de) * 1997-01-31 1998-09-02 Texas Instruments Incorporated Verfahren zur Herstellung eines Halbleiter-Speicherkondensators
JP3630551B2 (ja) * 1998-04-02 2005-03-16 株式会社東芝 半導体記憶装置及びその製造方法
US5895250A (en) * 1998-06-11 1999-04-20 Vanguard International Semiconductor Corporation Method of forming semicrown-shaped stacked capacitors for dynamic random access memory
US5976981A (en) * 1998-06-12 1999-11-02 Vanguard International Semiconductor Corporation Method for manufacturing a reverse crown capacitor for DRAM memory cell
KR100277907B1 (ko) * 1998-12-17 2001-02-01 김영환 반도체 소자의 캐패시터 형성방법
US6399440B1 (en) * 1999-11-22 2002-06-04 Vanguard International Semiconductor Corporation Method to reduce the node contact resistance
US6300191B1 (en) * 2001-02-15 2001-10-09 Taiwan Semiconductor Manufacturing Company Method of fabricating a capacitor under bit line structure for a dynamic random access memory device

Also Published As

Publication number Publication date
DE60130947T2 (de) 2008-07-31
FR2813142B1 (fr) 2002-11-29
EP1180790A1 (de) 2002-02-20
US6706589B2 (en) 2004-03-16
FR2813142A1 (fr) 2002-02-22
EP1180790B1 (de) 2007-10-17
US20020022332A1 (en) 2002-02-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition