DE60130768D1 - Elektronische und optische materialien - Google Patents
Elektronische und optische materialienInfo
- Publication number
- DE60130768D1 DE60130768D1 DE60130768T DE60130768T DE60130768D1 DE 60130768 D1 DE60130768 D1 DE 60130768D1 DE 60130768 T DE60130768 T DE 60130768T DE 60130768 T DE60130768 T DE 60130768T DE 60130768 D1 DE60130768 D1 DE 60130768D1
- Authority
- DE
- Germany
- Prior art keywords
- electronic
- optical materials
- deposited
- epitaxial
- sapphire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/404—Oxides of alkaline earth metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/405—Oxides of refractory metals or yttrium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/406—Oxides of iron group metals
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/32—Titanates; Germanates; Molybdates; Tungstates
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
- Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Insulating Materials (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
- Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US22287600P | 2000-08-03 | 2000-08-03 | |
PCT/US2001/024587 WO2002011980A1 (en) | 2000-08-03 | 2001-08-02 | Electronic and optical materials |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60130768D1 true DE60130768D1 (de) | 2007-11-15 |
Family
ID=22834089
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60130768T Expired - Lifetime DE60130768D1 (de) | 2000-08-03 | 2001-08-02 | Elektronische und optische materialien |
Country Status (7)
Country | Link |
---|---|
US (1) | US6986955B2 (de) |
EP (1) | EP1305161B1 (de) |
AT (1) | ATE374687T1 (de) |
AU (1) | AU2001284724A1 (de) |
DE (1) | DE60130768D1 (de) |
TW (1) | TWI265985B (de) |
WO (1) | WO2002011980A1 (de) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7786820B2 (en) * | 2005-03-21 | 2010-08-31 | Ngimat Co. | Tunable dielectric radio frequency microelectromechanical system capacitive switch |
US20090274930A1 (en) * | 2008-04-30 | 2009-11-05 | Guardian Industries Corp. | Alkaline earth fluoride coatings deposited via combustion deposition |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5198269A (en) * | 1989-04-24 | 1993-03-30 | Battelle Memorial Institute | Process for making sol-gel deposited ferroelectric thin films insensitive to their substrates |
US5132282A (en) * | 1990-03-16 | 1992-07-21 | Nathan Newman | High temperature superconductor-strontium titanate sapphire structures |
AU7653391A (en) * | 1990-03-16 | 1991-10-10 | Conductus, Inc. | High temperature superconducting films on aluminum oxide substrates |
US5612082A (en) * | 1991-12-13 | 1997-03-18 | Symetrix Corporation | Process for making metal oxides |
US5624707A (en) * | 1991-12-13 | 1997-04-29 | Symetrix Corporation | Method of forming ABO3 films with excess B-site modifiers |
US5614018A (en) * | 1991-12-13 | 1997-03-25 | Symetrix Corporation | Integrated circuit capacitors and process for making the same |
US5431958A (en) * | 1992-03-09 | 1995-07-11 | Sharp Kabushiki Kaisha | Metalorganic chemical vapor deposition of ferroelectric thin films |
US5572052A (en) * | 1992-07-24 | 1996-11-05 | Mitsubishi Denki Kabushiki Kaisha | Electronic device using zirconate titanate and barium titanate ferroelectrics in insulating layer |
DE69432175T2 (de) * | 1993-03-24 | 2004-03-04 | Georgia Tech Research Corp. | Verfahren und vorrichtung zur verbrennungs cvd von filmen und beschichtungen |
US5629229A (en) * | 1995-07-12 | 1997-05-13 | Sharp Kabushiki Kaisha | Metalorganic chemical vapor deposition of (Ba1-x Srx)RuO3 /(Ba1-x Srx)TIO3 /(Ba1-x Srx)TiO3 /(Ba1- Srx)RuO3 capacitors for high dielectric materials |
KR100479485B1 (ko) * | 1995-08-04 | 2005-09-07 | 마이크로코팅 테크놀로지, 인크. | 근초임계및초임계유동용액의열적분무를이용한화학증착및분말형성 |
JPH1131921A (ja) * | 1997-07-14 | 1999-02-02 | Mitsubishi Materials Corp | 電圧制御発振器 |
US6376090B1 (en) * | 1998-09-25 | 2002-04-23 | Sharp Kabushiki Kaisha | Method for manufacturing a substrate with an oxide ferroelectric thin film formed thereon and a substrate with an oxide ferroelectric thin film formed thereon |
EP1561256A4 (de) * | 2000-08-25 | 2006-06-21 | Ngimat Co | Elektronische und optische einrichtungen und verfahren zur bildung dieser einrichtungen |
-
2001
- 2001-08-02 EP EP01963804A patent/EP1305161B1/de not_active Expired - Lifetime
- 2001-08-02 WO PCT/US2001/024587 patent/WO2002011980A1/en active IP Right Grant
- 2001-08-02 AT AT01963804T patent/ATE374687T1/de not_active IP Right Cessation
- 2001-08-02 DE DE60130768T patent/DE60130768D1/de not_active Expired - Lifetime
- 2001-08-02 US US10/019,082 patent/US6986955B2/en not_active Expired - Lifetime
- 2001-08-02 AU AU2001284724A patent/AU2001284724A1/en not_active Abandoned
- 2001-08-03 TW TW090119036A patent/TWI265985B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
AU2001284724A1 (en) | 2002-02-18 |
US6986955B2 (en) | 2006-01-17 |
US20030228500A1 (en) | 2003-12-11 |
EP1305161B1 (de) | 2007-10-03 |
TWI265985B (en) | 2006-11-11 |
EP1305161A4 (de) | 2006-03-15 |
EP1305161A1 (de) | 2003-05-02 |
WO2002011980A1 (en) | 2002-02-14 |
ATE374687T1 (de) | 2007-10-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8332 | No legal effect for de |