AU2001284724A1 - Electronic and optical materials - Google Patents

Electronic and optical materials

Info

Publication number
AU2001284724A1
AU2001284724A1 AU2001284724A AU8472401A AU2001284724A1 AU 2001284724 A1 AU2001284724 A1 AU 2001284724A1 AU 2001284724 A AU2001284724 A AU 2001284724A AU 8472401 A AU8472401 A AU 8472401A AU 2001284724 A1 AU2001284724 A1 AU 2001284724A1
Authority
AU
Australia
Prior art keywords
electronic
optical materials
deposited
epitaxial
sapphire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001284724A
Inventor
George Guang-Ji Cui
Scott Flanagan
Fe Alma Gladden
Andrew Tye Hunt
Yongdong Jiang
Henry A. Luten Iii
Jerome Schmitt
Fang Yang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Microcoating Technologies Inc
Original Assignee
Microcoating Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Microcoating Technologies Inc filed Critical Microcoating Technologies Inc
Publication of AU2001284724A1 publication Critical patent/AU2001284724A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40Oxides
    • C23C16/404Oxides of alkaline earth metals
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40Oxides
    • C23C16/405Oxides of refractory metals or yttrium
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40Oxides
    • C23C16/406Oxides of iron group metals
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/16Oxides
    • C30B29/22Complex oxides
    • C30B29/32Titanates; Germanates; Molybdates; Tungstates
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/24Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24917Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Insulating Materials (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)
  • Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Epitaxial and reduced grain boundary materials are deposited on substrates for use in electronic and optical applications. A specific material disclosed is epitaxial barium strontium titanate ( 14 ) deposited on the C-plane of sapphire ( 12 ).
AU2001284724A 2000-08-03 2001-08-02 Electronic and optical materials Abandoned AU2001284724A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US22287600P 2000-08-03 2000-08-03
US60222876 2000-08-03
PCT/US2001/024587 WO2002011980A1 (en) 2000-08-03 2001-08-02 Electronic and optical materials

Publications (1)

Publication Number Publication Date
AU2001284724A1 true AU2001284724A1 (en) 2002-02-18

Family

ID=22834089

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001284724A Abandoned AU2001284724A1 (en) 2000-08-03 2001-08-02 Electronic and optical materials

Country Status (7)

Country Link
US (1) US6986955B2 (en)
EP (1) EP1305161B1 (en)
AT (1) ATE374687T1 (en)
AU (1) AU2001284724A1 (en)
DE (1) DE60130768D1 (en)
TW (1) TWI265985B (en)
WO (1) WO2002011980A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7786820B2 (en) * 2005-03-21 2010-08-31 Ngimat Co. Tunable dielectric radio frequency microelectromechanical system capacitive switch
US20090274930A1 (en) * 2008-04-30 2009-11-05 Guardian Industries Corp. Alkaline earth fluoride coatings deposited via combustion deposition

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5198269A (en) * 1989-04-24 1993-03-30 Battelle Memorial Institute Process for making sol-gel deposited ferroelectric thin films insensitive to their substrates
US5132282A (en) * 1990-03-16 1992-07-21 Nathan Newman High temperature superconductor-strontium titanate sapphire structures
AU7653391A (en) * 1990-03-16 1991-10-10 Conductus, Inc. High temperature superconducting films on aluminum oxide substrates
US5612082A (en) * 1991-12-13 1997-03-18 Symetrix Corporation Process for making metal oxides
US5614018A (en) * 1991-12-13 1997-03-25 Symetrix Corporation Integrated circuit capacitors and process for making the same
US5624707A (en) * 1991-12-13 1997-04-29 Symetrix Corporation Method of forming ABO3 films with excess B-site modifiers
US5431958A (en) * 1992-03-09 1995-07-11 Sharp Kabushiki Kaisha Metalorganic chemical vapor deposition of ferroelectric thin films
US5572052A (en) * 1992-07-24 1996-11-05 Mitsubishi Denki Kabushiki Kaisha Electronic device using zirconate titanate and barium titanate ferroelectrics in insulating layer
JP3519406B2 (en) * 1993-03-24 2004-04-12 ジョージア テック リサーチ コーポレイション Method of combustion chemical vapor deposition of films and coatings
US5629229A (en) * 1995-07-12 1997-05-13 Sharp Kabushiki Kaisha Metalorganic chemical vapor deposition of (Ba1-x Srx)RuO3 /(Ba1-x Srx)TIO3 /(Ba1-x Srx)TiO3 /(Ba1- Srx)RuO3 capacitors for high dielectric materials
US5997956A (en) * 1995-08-04 1999-12-07 Microcoating Technologies Chemical vapor deposition and powder formation using thermal spray with near supercritical and supercritical fluid solutions
JPH1131921A (en) * 1997-07-14 1999-02-02 Mitsubishi Materials Corp Voltage controlled oscillator
US6376090B1 (en) * 1998-09-25 2002-04-23 Sharp Kabushiki Kaisha Method for manufacturing a substrate with an oxide ferroelectric thin film formed thereon and a substrate with an oxide ferroelectric thin film formed thereon
EP1561256A4 (en) * 2000-08-25 2006-06-21 Ngimat Co Electronic and optical devices and methods of forming these devices

Also Published As

Publication number Publication date
EP1305161B1 (en) 2007-10-03
EP1305161A1 (en) 2003-05-02
US20030228500A1 (en) 2003-12-11
EP1305161A4 (en) 2006-03-15
ATE374687T1 (en) 2007-10-15
US6986955B2 (en) 2006-01-17
TWI265985B (en) 2006-11-11
DE60130768D1 (en) 2007-11-15
WO2002011980A1 (en) 2002-02-14

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