AU2001284724A1 - Electronic and optical materials - Google Patents
Electronic and optical materialsInfo
- Publication number
- AU2001284724A1 AU2001284724A1 AU2001284724A AU8472401A AU2001284724A1 AU 2001284724 A1 AU2001284724 A1 AU 2001284724A1 AU 2001284724 A AU2001284724 A AU 2001284724A AU 8472401 A AU8472401 A AU 8472401A AU 2001284724 A1 AU2001284724 A1 AU 2001284724A1
- Authority
- AU
- Australia
- Prior art keywords
- electronic
- optical materials
- deposited
- epitaxial
- sapphire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/404—Oxides of alkaline earth metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/405—Oxides of refractory metals or yttrium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/406—Oxides of iron group metals
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/32—Titanates; Germanates; Molybdates; Tungstates
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
- Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Insulating Materials (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
- Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Epitaxial and reduced grain boundary materials are deposited on substrates for use in electronic and optical applications. A specific material disclosed is epitaxial barium strontium titanate ( 14 ) deposited on the C-plane of sapphire ( 12 ).
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US22287600P | 2000-08-03 | 2000-08-03 | |
US60222876 | 2000-08-03 | ||
PCT/US2001/024587 WO2002011980A1 (en) | 2000-08-03 | 2001-08-02 | Electronic and optical materials |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2001284724A1 true AU2001284724A1 (en) | 2002-02-18 |
Family
ID=22834089
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001284724A Abandoned AU2001284724A1 (en) | 2000-08-03 | 2001-08-02 | Electronic and optical materials |
Country Status (7)
Country | Link |
---|---|
US (1) | US6986955B2 (en) |
EP (1) | EP1305161B1 (en) |
AT (1) | ATE374687T1 (en) |
AU (1) | AU2001284724A1 (en) |
DE (1) | DE60130768D1 (en) |
TW (1) | TWI265985B (en) |
WO (1) | WO2002011980A1 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7786820B2 (en) * | 2005-03-21 | 2010-08-31 | Ngimat Co. | Tunable dielectric radio frequency microelectromechanical system capacitive switch |
US20090274930A1 (en) * | 2008-04-30 | 2009-11-05 | Guardian Industries Corp. | Alkaline earth fluoride coatings deposited via combustion deposition |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5198269A (en) * | 1989-04-24 | 1993-03-30 | Battelle Memorial Institute | Process for making sol-gel deposited ferroelectric thin films insensitive to their substrates |
US5132282A (en) * | 1990-03-16 | 1992-07-21 | Nathan Newman | High temperature superconductor-strontium titanate sapphire structures |
AU7653391A (en) * | 1990-03-16 | 1991-10-10 | Conductus, Inc. | High temperature superconducting films on aluminum oxide substrates |
US5612082A (en) * | 1991-12-13 | 1997-03-18 | Symetrix Corporation | Process for making metal oxides |
US5614018A (en) * | 1991-12-13 | 1997-03-25 | Symetrix Corporation | Integrated circuit capacitors and process for making the same |
US5624707A (en) * | 1991-12-13 | 1997-04-29 | Symetrix Corporation | Method of forming ABO3 films with excess B-site modifiers |
US5431958A (en) * | 1992-03-09 | 1995-07-11 | Sharp Kabushiki Kaisha | Metalorganic chemical vapor deposition of ferroelectric thin films |
US5572052A (en) * | 1992-07-24 | 1996-11-05 | Mitsubishi Denki Kabushiki Kaisha | Electronic device using zirconate titanate and barium titanate ferroelectrics in insulating layer |
JP3519406B2 (en) * | 1993-03-24 | 2004-04-12 | ジョージア テック リサーチ コーポレイション | Method of combustion chemical vapor deposition of films and coatings |
US5629229A (en) * | 1995-07-12 | 1997-05-13 | Sharp Kabushiki Kaisha | Metalorganic chemical vapor deposition of (Ba1-x Srx)RuO3 /(Ba1-x Srx)TIO3 /(Ba1-x Srx)TiO3 /(Ba1- Srx)RuO3 capacitors for high dielectric materials |
US5997956A (en) * | 1995-08-04 | 1999-12-07 | Microcoating Technologies | Chemical vapor deposition and powder formation using thermal spray with near supercritical and supercritical fluid solutions |
JPH1131921A (en) * | 1997-07-14 | 1999-02-02 | Mitsubishi Materials Corp | Voltage controlled oscillator |
US6376090B1 (en) * | 1998-09-25 | 2002-04-23 | Sharp Kabushiki Kaisha | Method for manufacturing a substrate with an oxide ferroelectric thin film formed thereon and a substrate with an oxide ferroelectric thin film formed thereon |
EP1561256A4 (en) * | 2000-08-25 | 2006-06-21 | Ngimat Co | Electronic and optical devices and methods of forming these devices |
-
2001
- 2001-08-02 US US10/019,082 patent/US6986955B2/en not_active Expired - Lifetime
- 2001-08-02 EP EP01963804A patent/EP1305161B1/en not_active Expired - Lifetime
- 2001-08-02 DE DE60130768T patent/DE60130768D1/en not_active Expired - Lifetime
- 2001-08-02 WO PCT/US2001/024587 patent/WO2002011980A1/en active IP Right Grant
- 2001-08-02 AU AU2001284724A patent/AU2001284724A1/en not_active Abandoned
- 2001-08-02 AT AT01963804T patent/ATE374687T1/en not_active IP Right Cessation
- 2001-08-03 TW TW090119036A patent/TWI265985B/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP1305161B1 (en) | 2007-10-03 |
EP1305161A1 (en) | 2003-05-02 |
US20030228500A1 (en) | 2003-12-11 |
EP1305161A4 (en) | 2006-03-15 |
ATE374687T1 (en) | 2007-10-15 |
US6986955B2 (en) | 2006-01-17 |
TWI265985B (en) | 2006-11-11 |
DE60130768D1 (en) | 2007-11-15 |
WO2002011980A1 (en) | 2002-02-14 |
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