DE60130146D1 - Esd-schutzeinrichtungen - Google Patents
Esd-schutzeinrichtungenInfo
- Publication number
- DE60130146D1 DE60130146D1 DE60130146T DE60130146T DE60130146D1 DE 60130146 D1 DE60130146 D1 DE 60130146D1 DE 60130146 T DE60130146 T DE 60130146T DE 60130146 T DE60130146 T DE 60130146T DE 60130146 D1 DE60130146 D1 DE 60130146D1
- Authority
- DE
- Germany
- Prior art keywords
- terminals
- switching element
- esd protection
- pair
- protecting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0288—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using passive elements as protective elements, e.g. resistors, capacitors, inductors, spark-gaps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
- H03K17/08126—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in bipolar transitor switches
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US733518 | 2000-12-07 | ||
US09/733,518 US6507471B2 (en) | 2000-12-07 | 2000-12-07 | ESD protection devices |
PCT/EP2001/013744 WO2002047166A2 (en) | 2000-12-07 | 2001-11-23 | Esd protection devices |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60130146D1 true DE60130146D1 (de) | 2007-10-04 |
DE60130146T2 DE60130146T2 (de) | 2008-05-21 |
Family
ID=24947952
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60130146T Expired - Lifetime DE60130146T2 (de) | 2000-12-07 | 2001-11-23 | Esd-schutzeinrichtungen |
Country Status (6)
Country | Link |
---|---|
US (1) | US6507471B2 (de) |
EP (1) | EP1356524B1 (de) |
JP (1) | JP2004515923A (de) |
AT (1) | ATE371268T1 (de) |
DE (1) | DE60130146T2 (de) |
WO (1) | WO2002047166A2 (de) |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6650165B1 (en) * | 2002-05-02 | 2003-11-18 | Micrel, Incorporated | Localized electrostatic discharge protection for integrated circuit input/output pads |
US6861711B2 (en) * | 2003-01-03 | 2005-03-01 | Micrel, Incorporated | Thick gate oxide transistor and electrostatic discharge protection utilizing thick gate oxide transistors |
US6888710B2 (en) | 2003-01-03 | 2005-05-03 | Micrel, Incorporated | Insulated gate bipolar transistor and electrostatic discharge cell protection utilizing insulated gate bipolar transistors |
US6864537B1 (en) | 2003-01-03 | 2005-03-08 | Micrel, Incorporated | Thick gate oxide transistor and electrostatic discharge protection utilizing thick gate oxide transistors |
US6882224B1 (en) * | 2003-04-03 | 2005-04-19 | Xilinx, Inc. | Self-biasing for common gate amplifier |
US7616414B2 (en) * | 2003-04-25 | 2009-11-10 | Broadcom Corporation | ESD protection circuit for high speed signaling including T/R switches |
US6970337B2 (en) * | 2003-06-24 | 2005-11-29 | Linear X Systems Inc. | High-voltage low-distortion input protection current limiter |
US7167331B1 (en) | 2003-10-23 | 2007-01-23 | Marvell International Ltd. | Electrostatic discharge protection circuit for magneto-resistive read elements |
US7286328B1 (en) | 2003-10-23 | 2007-10-23 | Marvell International Ltd. | Electrostatic discharge protection circuit for preamps connected to magneto-resistive read elements |
DE102004004789B3 (de) * | 2004-01-30 | 2005-03-03 | Infineon Technologies Ag | ESD-Schutzschaltkreis für eine elektronische Schaltung mit mehreren Versorgungsspannungen |
US20050254158A1 (en) * | 2004-05-13 | 2005-11-17 | Kuehne Stephen C | ESD protection for differential mode magnetic transducer |
JP3874776B2 (ja) * | 2004-10-15 | 2007-01-31 | ローム株式会社 | 演算増幅器 |
DE102004052868B4 (de) * | 2004-11-02 | 2007-02-08 | Infineon Technologies Ag | Integrierte Schaltkreis-Anordnung und Schaltkreis-Array |
US8144441B2 (en) * | 2006-08-30 | 2012-03-27 | Triquint Semiconductor, Inc. | Electrostatic discharge protection circuit for compound semiconductor devices and circuits |
US7974053B2 (en) * | 2008-05-29 | 2011-07-05 | Amazing Microelectronic Corp | ESD protection circuit for differential I/O pair |
US7826188B2 (en) * | 2008-06-17 | 2010-11-02 | International Business Machines Corporation | Methods, design structures, and systems for current mode logic (CML) differential driver ESD protection circuitry |
US8823417B2 (en) * | 2008-07-09 | 2014-09-02 | Siemens Industry, Inc. | Combination AC/DC peak detector and signal type discriminator |
US7880195B2 (en) * | 2008-12-08 | 2011-02-01 | United Microelectronics Corp. | Electrostatic discharge protection device and related circuit |
US20110089902A1 (en) * | 2009-10-21 | 2011-04-21 | K2 Energy Solutions, Inc. | Circuitry for balancing charging of series connected battery cells |
US8461897B2 (en) | 2010-06-07 | 2013-06-11 | Skyworks Solutions, Inc. | Apparatus and method for well buffering |
US8656761B2 (en) * | 2011-05-27 | 2014-02-25 | General Electric Company | Systems and methods for use in providing a sensor signal independent of ground |
CN102957136B (zh) * | 2011-08-19 | 2015-01-14 | 登丰微电子股份有限公司 | 具有冲击电流保护的负载驱动电路 |
WO2013106484A1 (en) * | 2012-01-09 | 2013-07-18 | Skyworks Solutions, Inc. | Devices and methods related to electrostatic discharge-protected cmos switches |
JP5872714B2 (ja) * | 2012-02-15 | 2016-03-01 | クゥアルコム・インコーポレイテッドQualcomm Incorporated | 差動入力/出力インタフェースのためのサージ保護 |
US9929698B2 (en) * | 2013-03-15 | 2018-03-27 | Qualcomm Incorporated | Radio frequency integrated circuit (RFIC) charged-device model (CDM) protection |
US9762052B2 (en) * | 2013-03-15 | 2017-09-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Circuit and method of electrically decoupling nodes |
US10026729B2 (en) * | 2014-03-12 | 2018-07-17 | Mediatek Inc. | Surge-protection circuit and surge-protection method |
US9882377B2 (en) | 2015-01-28 | 2018-01-30 | International Business Machines Corporation | Electrostatic discharge protection solutions |
TWI591795B (zh) | 2016-05-09 | 2017-07-11 | 瑞昱半導體股份有限公司 | 靜電放電保護電路 |
CN107369672A (zh) * | 2016-05-12 | 2017-11-21 | 瑞昱半导体股份有限公司 | 静电放电保护电路 |
TWI627809B (zh) * | 2017-01-25 | 2018-06-21 | 瑞昱半導體股份有限公司 | 靜電放電防護電路 |
US10547312B2 (en) * | 2017-03-15 | 2020-01-28 | Silicon Laboratories Inc. | Wide voltage range input interface |
TWI654733B (zh) * | 2018-06-04 | 2019-03-21 | 茂達電子股份有限公司 | 靜電放電保護電路 |
CN110198028B (zh) * | 2019-05-13 | 2021-08-24 | 深圳市华星光电半导体显示技术有限公司 | 静电防护电路 |
US11664741B2 (en) * | 2019-07-25 | 2023-05-30 | Susan Rhodes | System and method for AC power control |
US11398468B2 (en) * | 2019-12-12 | 2022-07-26 | Micron Technology, Inc. | Apparatus with voltage protection mechanism |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3879640A (en) * | 1974-02-11 | 1975-04-22 | Rca Corp | Protective diode network for MOS devices |
US4044313A (en) * | 1976-12-01 | 1977-08-23 | Rca Corporation | Protective network for an insulated-gate field-effect (IGFET) differential amplifier |
US4206418A (en) * | 1978-07-03 | 1980-06-03 | Rca Corporation | Circuit for limiting voltage differential in differential amplifiers |
JPS55154809A (en) * | 1979-05-23 | 1980-12-02 | Toshiba Corp | Input protecting circuit of operational amplifier |
US4940907A (en) * | 1989-01-19 | 1990-07-10 | Ford Motor Company | Precision CMOS comparator with hysteresis |
BR9106976A (pt) * | 1990-10-12 | 1993-08-24 | Raychem Ltd | Arranjo de protecao de circuito |
US5311083A (en) | 1993-01-25 | 1994-05-10 | Standard Microsystems Corporation | Very low voltage inter-chip CMOS logic signaling for large numbers of high-speed output lines each associated with large capacitive loads |
US5574618A (en) * | 1994-02-17 | 1996-11-12 | Harris Corporation | ESD protection using SCR clamping |
US5862031A (en) * | 1997-11-26 | 1999-01-19 | Analog Devices, Inc. | ESD protection circuit for integrated circuits having a bipolar differential input |
-
2000
- 2000-12-07 US US09/733,518 patent/US6507471B2/en not_active Expired - Fee Related
-
2001
- 2001-11-23 WO PCT/EP2001/013744 patent/WO2002047166A2/en active IP Right Grant
- 2001-11-23 JP JP2002548786A patent/JP2004515923A/ja active Pending
- 2001-11-23 DE DE60130146T patent/DE60130146T2/de not_active Expired - Lifetime
- 2001-11-23 AT AT01991758T patent/ATE371268T1/de not_active IP Right Cessation
- 2001-11-23 EP EP01991758A patent/EP1356524B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
WO2002047166A3 (en) | 2003-08-07 |
WO2002047166A2 (en) | 2002-06-13 |
US6507471B2 (en) | 2003-01-14 |
JP2004515923A (ja) | 2004-05-27 |
DE60130146T2 (de) | 2008-05-21 |
EP1356524B1 (de) | 2007-08-22 |
EP1356524A2 (de) | 2003-10-29 |
ATE371268T1 (de) | 2007-09-15 |
US20020071230A1 (en) | 2002-06-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |