ATE371268T1 - Esd-schutzeinrichtungen - Google Patents

Esd-schutzeinrichtungen

Info

Publication number
ATE371268T1
ATE371268T1 AT01991758T AT01991758T ATE371268T1 AT E371268 T1 ATE371268 T1 AT E371268T1 AT 01991758 T AT01991758 T AT 01991758T AT 01991758 T AT01991758 T AT 01991758T AT E371268 T1 ATE371268 T1 AT E371268T1
Authority
AT
Austria
Prior art keywords
terminals
switching element
esd protection
pair
protecting
Prior art date
Application number
AT01991758T
Other languages
English (en)
Inventor
Roy Colclaser
James Spehar
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE371268T1 publication Critical patent/ATE371268T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0288—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using passive elements as protective elements, e.g. resistors, capacitors, inductors, spark-gaps
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08126—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in bipolar transitor switches

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
  • Control Of Eletrric Generators (AREA)
  • Emergency Protection Circuit Devices (AREA)
AT01991758T 2000-12-07 2001-11-23 Esd-schutzeinrichtungen ATE371268T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/733,518 US6507471B2 (en) 2000-12-07 2000-12-07 ESD protection devices

Publications (1)

Publication Number Publication Date
ATE371268T1 true ATE371268T1 (de) 2007-09-15

Family

ID=24947952

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01991758T ATE371268T1 (de) 2000-12-07 2001-11-23 Esd-schutzeinrichtungen

Country Status (6)

Country Link
US (1) US6507471B2 (de)
EP (1) EP1356524B1 (de)
JP (1) JP2004515923A (de)
AT (1) ATE371268T1 (de)
DE (1) DE60130146T2 (de)
WO (1) WO2002047166A2 (de)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6650165B1 (en) * 2002-05-02 2003-11-18 Micrel, Incorporated Localized electrostatic discharge protection for integrated circuit input/output pads
US6864537B1 (en) 2003-01-03 2005-03-08 Micrel, Incorporated Thick gate oxide transistor and electrostatic discharge protection utilizing thick gate oxide transistors
US6861711B2 (en) * 2003-01-03 2005-03-01 Micrel, Incorporated Thick gate oxide transistor and electrostatic discharge protection utilizing thick gate oxide transistors
US6888710B2 (en) * 2003-01-03 2005-05-03 Micrel, Incorporated Insulated gate bipolar transistor and electrostatic discharge cell protection utilizing insulated gate bipolar transistors
US6882224B1 (en) * 2003-04-03 2005-04-19 Xilinx, Inc. Self-biasing for common gate amplifier
US7616414B2 (en) * 2003-04-25 2009-11-10 Broadcom Corporation ESD protection circuit for high speed signaling including T/R switches
US6970337B2 (en) * 2003-06-24 2005-11-29 Linear X Systems Inc. High-voltage low-distortion input protection current limiter
US7167331B1 (en) 2003-10-23 2007-01-23 Marvell International Ltd. Electrostatic discharge protection circuit for magneto-resistive read elements
US7286328B1 (en) 2003-10-23 2007-10-23 Marvell International Ltd. Electrostatic discharge protection circuit for preamps connected to magneto-resistive read elements
DE102004004789B3 (de) * 2004-01-30 2005-03-03 Infineon Technologies Ag ESD-Schutzschaltkreis für eine elektronische Schaltung mit mehreren Versorgungsspannungen
US20050254158A1 (en) * 2004-05-13 2005-11-17 Kuehne Stephen C ESD protection for differential mode magnetic transducer
JP3874776B2 (ja) * 2004-10-15 2007-01-31 ローム株式会社 演算増幅器
DE102004052868B4 (de) * 2004-11-02 2007-02-08 Infineon Technologies Ag Integrierte Schaltkreis-Anordnung und Schaltkreis-Array
US8144441B2 (en) * 2006-08-30 2012-03-27 Triquint Semiconductor, Inc. Electrostatic discharge protection circuit for compound semiconductor devices and circuits
US7974053B2 (en) * 2008-05-29 2011-07-05 Amazing Microelectronic Corp ESD protection circuit for differential I/O pair
US7826188B2 (en) * 2008-06-17 2010-11-02 International Business Machines Corporation Methods, design structures, and systems for current mode logic (CML) differential driver ESD protection circuitry
US8823417B2 (en) * 2008-07-09 2014-09-02 Siemens Industry, Inc. Combination AC/DC peak detector and signal type discriminator
US7880195B2 (en) * 2008-12-08 2011-02-01 United Microelectronics Corp. Electrostatic discharge protection device and related circuit
US20110089908A1 (en) * 2009-10-21 2011-04-21 K2 Energy Solutions, Inc. Circuitry for balancing charging of series connected battery cells
US20110298280A1 (en) 2010-06-07 2011-12-08 Skyworks Solutions, Inc Apparatus and method for variable voltage distribution
US8656761B2 (en) * 2011-05-27 2014-02-25 General Electric Company Systems and methods for use in providing a sensor signal independent of ground
CN102957136B (zh) * 2011-08-19 2015-01-14 登丰微电子股份有限公司 具有冲击电流保护的负载驱动电路
US9373955B2 (en) 2012-01-09 2016-06-21 Skyworks Solutions, Inc. Devices and methods related to electrostatic discharge-protected CMOS switches
EP2815478B1 (de) 2012-02-15 2017-03-22 Qualcomm Incorporated Überspannungsschutz für differentielle eingangs-/ausgangsschnittstellen
US9929698B2 (en) * 2013-03-15 2018-03-27 Qualcomm Incorporated Radio frequency integrated circuit (RFIC) charged-device model (CDM) protection
US9762052B2 (en) * 2013-03-15 2017-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. Circuit and method of electrically decoupling nodes
US10026729B2 (en) * 2014-03-12 2018-07-17 Mediatek Inc. Surge-protection circuit and surge-protection method
US9882377B2 (en) 2015-01-28 2018-01-30 International Business Machines Corporation Electrostatic discharge protection solutions
TWI591795B (zh) 2016-05-09 2017-07-11 瑞昱半導體股份有限公司 靜電放電保護電路
CN107369672A (zh) * 2016-05-12 2017-11-21 瑞昱半导体股份有限公司 静电放电保护电路
TWI627809B (zh) * 2017-01-25 2018-06-21 瑞昱半導體股份有限公司 靜電放電防護電路
US10547312B2 (en) * 2017-03-15 2020-01-28 Silicon Laboratories Inc. Wide voltage range input interface
TWI654733B (zh) * 2018-06-04 2019-03-21 茂達電子股份有限公司 靜電放電保護電路
CN110198028B (zh) * 2019-05-13 2021-08-24 深圳市华星光电半导体显示技术有限公司 静电防护电路
US11664741B2 (en) * 2019-07-25 2023-05-30 Susan Rhodes System and method for AC power control
US11398468B2 (en) * 2019-12-12 2022-07-26 Micron Technology, Inc. Apparatus with voltage protection mechanism

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3879640A (en) * 1974-02-11 1975-04-22 Rca Corp Protective diode network for MOS devices
US4044313A (en) * 1976-12-01 1977-08-23 Rca Corporation Protective network for an insulated-gate field-effect (IGFET) differential amplifier
US4206418A (en) * 1978-07-03 1980-06-03 Rca Corporation Circuit for limiting voltage differential in differential amplifiers
JPS55154809A (en) * 1979-05-23 1980-12-02 Toshiba Corp Input protecting circuit of operational amplifier
US4940907A (en) * 1989-01-19 1990-07-10 Ford Motor Company Precision CMOS comparator with hysteresis
KR930702811A (ko) * 1990-10-12 1993-09-09 죤 에버레트 벤슨 회로 보호 장치 및 유니트
US5311083A (en) 1993-01-25 1994-05-10 Standard Microsystems Corporation Very low voltage inter-chip CMOS logic signaling for large numbers of high-speed output lines each associated with large capacitive loads
US5574618A (en) * 1994-02-17 1996-11-12 Harris Corporation ESD protection using SCR clamping
US5862031A (en) * 1997-11-26 1999-01-19 Analog Devices, Inc. ESD protection circuit for integrated circuits having a bipolar differential input

Also Published As

Publication number Publication date
EP1356524B1 (de) 2007-08-22
US20020071230A1 (en) 2002-06-13
DE60130146T2 (de) 2008-05-21
US6507471B2 (en) 2003-01-14
JP2004515923A (ja) 2004-05-27
DE60130146D1 (de) 2007-10-04
WO2002047166A3 (en) 2003-08-07
WO2002047166A2 (en) 2002-06-13
EP1356524A2 (de) 2003-10-29

Similar Documents

Publication Publication Date Title
ATE371268T1 (de) Esd-schutzeinrichtungen
US10256287B2 (en) Floating body contact circuit method for improving ESD performance and switching speed
US6292343B1 (en) ASIC book to provide ESD protection on an integrated circuit
US7755871B2 (en) Power-rail ESD protection circuit with ultra low gate leakage
CN107104099B (zh) 静电保护电路、半导体集成电路装置以及电子设备
US7102864B2 (en) Latch-up-free ESD protection circuit using SCR
AU3611593A (en) Shunt circuit for electrostatic discharge protection
JPH09134997A (ja) 半導体素子における静電放電保護装置
US9406695B2 (en) Circuit and method for improving ESD tolerance and switching speed
WO2003012951A3 (en) Esd protection devices for a differential pair of transistors
US7184253B1 (en) ESD trigger circuit with injected current compensation
KR950012707A (ko) 반도체 장치
US7855862B1 (en) Electrostatic discharge (ESD) circuit and method that includes P-channel device in signal path
US6538867B1 (en) FET switch with overvoltage protection
JP2002313949A (ja) 過電圧保護回路
US6650165B1 (en) Localized electrostatic discharge protection for integrated circuit input/output pads
US20150085409A1 (en) Active esd protection circuit with blocking diode
JP2003303899A5 (de)
TWI221662B (en) Semiconductor device having a protective circuit
JP3149999B2 (ja) 半導体入出力保護装置
US6529356B2 (en) Power polarity reversal protecting circuit for an integrated circuit
US7606013B2 (en) Electro-static discharge protection circuit
US10680435B2 (en) Enhanced electrostatic discharge (ESD) clamp
US5287024A (en) FET bidirectional switching arrangements and methods for preventing pn junctions of FETs from being forward-biased
JP3455001B2 (ja) 半導体装置

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties