DE60126758D1 - Verfahren für metal-cmp mit verminderter muldenbildung - Google Patents

Verfahren für metal-cmp mit verminderter muldenbildung

Info

Publication number
DE60126758D1
DE60126758D1 DE60126758T DE60126758T DE60126758D1 DE 60126758 D1 DE60126758 D1 DE 60126758D1 DE 60126758 T DE60126758 T DE 60126758T DE 60126758 T DE60126758 T DE 60126758T DE 60126758 D1 DE60126758 D1 DE 60126758D1
Authority
DE
Germany
Prior art keywords
metal cmp
reduced molding
molding
reduced
cmp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60126758T
Other languages
English (en)
Other versions
DE60126758T2 (de
Inventor
Chenting Lin
Robert Ploessl
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies North America Corp
Original Assignee
Infineon Technologies North America Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies North America Corp filed Critical Infineon Technologies North America Corp
Publication of DE60126758D1 publication Critical patent/DE60126758D1/de
Application granted granted Critical
Publication of DE60126758T2 publication Critical patent/DE60126758T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684—Smoothing; Planarisation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
DE60126758T 2000-05-11 2001-05-10 Verfahren für metal-cmp mit verminderter muldenbildung Expired - Lifetime DE60126758T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/569,220 US6943113B1 (en) 2000-05-11 2000-05-11 Metal chemical polishing process for minimizing dishing during semiconductor wafer fabrication
US569220 2000-05-11
PCT/US2001/015205 WO2001085392A2 (en) 2000-05-11 2001-05-10 Metal chemical mechanical polishing process for minimizing dishing during semiconductor wafer fabrication

Publications (2)

Publication Number Publication Date
DE60126758D1 true DE60126758D1 (de) 2007-04-05
DE60126758T2 DE60126758T2 (de) 2007-12-06

Family

ID=24274553

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60126758T Expired - Lifetime DE60126758T2 (de) 2000-05-11 2001-05-10 Verfahren für metal-cmp mit verminderter muldenbildung

Country Status (6)

Country Link
US (1) US6943113B1 (de)
EP (1) EP1281199B1 (de)
KR (1) KR100830744B1 (de)
DE (1) DE60126758T2 (de)
TW (1) TWI242481B (de)
WO (1) WO2001085392A2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10163570A1 (de) 2001-12-21 2003-07-10 Solvay Barium Strontium Gmbh Neue Verwendung für Erdalkalimetallsalze
KR100725709B1 (ko) * 2006-07-21 2007-06-07 동부일렉트로닉스 주식회사 반도체 소자의 제조 방법
CN101456151B (zh) * 2007-12-13 2013-04-17 中芯国际集成电路制造(上海)有限公司 化学机械研磨及其终点检测方法
CN111435639B (zh) * 2018-12-26 2023-05-05 中芯国际集成电路制造(北京)有限公司 半导体结构及其形成方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3216104B2 (ja) * 1991-05-29 2001-10-09 ソニー株式会社 メタルプラグ形成方法及び配線形成方法
US6001730A (en) * 1997-10-20 1999-12-14 Motorola, Inc. Chemical mechanical polishing (CMP) slurry for polishing copper interconnects which use tantalum-based barrier layers
JP3371775B2 (ja) * 1997-10-31 2003-01-27 株式会社日立製作所 研磨方法
WO1999046081A1 (en) * 1998-03-11 1999-09-16 Strasbaugh Multi-step chemical mechanical polishing process and device
US6218306B1 (en) * 1998-04-22 2001-04-17 Applied Materials, Inc. Method of chemical mechanical polishing a metal layer
US6261157B1 (en) * 1999-05-25 2001-07-17 Applied Materials, Inc. Selective damascene chemical mechanical polishing
US7041599B1 (en) * 1999-12-21 2006-05-09 Applied Materials Inc. High through-put Cu CMP with significantly reduced erosion and dishing

Also Published As

Publication number Publication date
KR20020093143A (ko) 2002-12-12
DE60126758T2 (de) 2007-12-06
EP1281199B1 (de) 2007-02-21
US6943113B1 (en) 2005-09-13
KR100830744B1 (ko) 2008-05-20
EP1281199A2 (de) 2003-02-05
WO2001085392A2 (en) 2001-11-15
WO2001085392A3 (en) 2002-10-10
TWI242481B (en) 2005-11-01

Similar Documents

Publication Publication Date Title
DE60126063D1 (de) Anhänger für selbststabilisierendes fahrzeug
DE60110009D1 (de) Wechselstromgenerator für Fahrzeuge
DE60136048D1 (de) Wechselstromgenerator für Fahrzeuge
DE60001785D1 (de) Verfahren zur Reifenherstellung
DE60141316D1 (de) Indikator für die plasmasterilisation
DE60124884D1 (de) Verfahren zur verbesserung der fotomaskengeometrie
ATE552211T1 (de) Kontinuierliches verfahren zur hydrierung
DE60141586D1 (de) Verfahren zur fertigungssteuerung
DE60142344D1 (de) Schweiss-herstellungsverfahren für einen elektrolyseur
DE60117231D1 (de) Verfahren zur Reifenherstellung
DE60127607D1 (de) Wechselstromgenerator für Fahrzeuge
DE60021073D1 (de) Tragprofil für Transferwagen
ATE275183T1 (de) Fischer-tropsch verfahren
DE50013367D1 (de) Scheinwerfer für Fahrzeuge
DE60107741D1 (de) Formschliessmechanismus für Formmaschine
DE10196891T1 (de) Extruder-Biegemaschine für flüssiges Roheisen
DE60232561D1 (de) Verfahren zur Reifenherstellung
DE60115364D1 (de) Herstellungsverfahren für stranggussknüppel
DE60113489D1 (de) Lichtmaschine für Fahrzeuge
DE60128157D1 (de) Verfahren zur Reifenherstellung
DE50000893D1 (de) Verfahren zur veredelung
DE50106628D1 (de) Stützeinrichtung für fahrzeuge
DE60231673D1 (de) Wechselstromgenerator für Fahrzeuge
DE60024829D1 (de) Profil für Karosserie
DE50107033D1 (de) Standardinterface für Fahrzeuge

Legal Events

Date Code Title Description
8364 No opposition during term of opposition