DE60126677D1 - Verfahren und vorrichtung zur verbesserung des wirkungsgrads in optoelektronischen strahlungsquelleneinrichtungen - Google Patents

Verfahren und vorrichtung zur verbesserung des wirkungsgrads in optoelektronischen strahlungsquelleneinrichtungen

Info

Publication number
DE60126677D1
DE60126677D1 DE60126677T DE60126677T DE60126677D1 DE 60126677 D1 DE60126677 D1 DE 60126677D1 DE 60126677 T DE60126677 T DE 60126677T DE 60126677 T DE60126677 T DE 60126677T DE 60126677 D1 DE60126677 D1 DE 60126677D1
Authority
DE
Germany
Prior art keywords
improving
efficiency
radiation source
source devices
optoelectronic radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60126677T
Other languages
English (en)
Other versions
DE60126677T2 (de
Inventor
Zalmanovitch Garbuzov
J Menna
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Trumpf Photonics Inc
Original Assignee
Trumpf Photonics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Trumpf Photonics Inc filed Critical Trumpf Photonics Inc
Publication of DE60126677D1 publication Critical patent/DE60126677D1/de
Application granted granted Critical
Publication of DE60126677T2 publication Critical patent/DE60126677T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0045—Devices characterised by their operation the devices being superluminescent diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H01S5/3213—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities asymmetric clading layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Computer Hardware Design (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Lasers (AREA)
DE60126677T 2001-03-19 2001-03-19 Verfahren und vorrichtung zur verbesserung des wirkungsgrads in optoelektronischen strahlungsquelleneinrichtungen Expired - Lifetime DE60126677T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2001/008941 WO2002075878A1 (en) 2001-03-19 2001-03-19 A method and apparatus for improving efficiency in opto-electronic radiation source devices

Publications (2)

Publication Number Publication Date
DE60126677D1 true DE60126677D1 (de) 2007-03-29
DE60126677T2 DE60126677T2 (de) 2007-10-31

Family

ID=21742422

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60126677T Expired - Lifetime DE60126677T2 (de) 2001-03-19 2001-03-19 Verfahren und vorrichtung zur verbesserung des wirkungsgrads in optoelektronischen strahlungsquelleneinrichtungen

Country Status (4)

Country Link
EP (1) EP1380077B1 (de)
JP (1) JP4278985B2 (de)
DE (1) DE60126677T2 (de)
WO (1) WO2002075878A1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030072994A (ko) * 2002-03-08 2003-09-19 주식회사 엘지이아이 광손실 및 열 특성을 개선시킨 반도체 레이저 다이오드
NO325047B1 (no) * 2005-03-30 2008-01-21 Intopto As Optiske enheter ved bruk av et pentaert III-V material system
JP2019046835A (ja) * 2017-08-30 2019-03-22 株式会社沖データ 半導体発光素子、半導体複合装置、光プリントヘッド、及び画像形成装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5826834B2 (ja) * 1979-09-28 1983-06-06 株式会社日立製作所 半導体レ−ザ−装置
US4323859A (en) * 1980-02-04 1982-04-06 Northern Telecom Limited Chanelled substrate double heterostructure lasers
EP0540799A1 (de) * 1991-11-04 1993-05-12 International Business Machines Corporation Verbesserte, sichtbares licht emittierende, AlGaInP-Dioden
EP0575684A1 (de) * 1992-06-22 1993-12-29 International Business Machines Corporation Laserdiode mit entkoppelter optischer und elektronischer Begrenzung
US5448585A (en) * 1994-06-29 1995-09-05 At&T Ipm Corp. Article comprising a quantum well laser
JP3645320B2 (ja) * 1995-07-31 2005-05-11 三井化学株式会社 半導体レーザ素子
DE69707390T2 (de) * 1996-04-24 2002-06-27 Uniphase Opto Holdings Inc Strahlungsemittierende halbleiterdiode und deren herstellungsverfahren
GB2320610A (en) * 1996-12-21 1998-06-24 Sharp Kk laser device
JP3481458B2 (ja) * 1998-05-14 2003-12-22 アンリツ株式会社 半導体レーザ

Also Published As

Publication number Publication date
EP1380077A1 (de) 2004-01-14
JP2005510854A (ja) 2005-04-21
EP1380077A4 (de) 2005-12-07
DE60126677T2 (de) 2007-10-31
JP4278985B2 (ja) 2009-06-17
EP1380077B1 (de) 2007-02-14
WO2002075878A1 (en) 2002-09-26

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