DE60040040D1 - Belichtungsverfahren und Abtastbelichtungsapparat - Google Patents

Belichtungsverfahren und Abtastbelichtungsapparat

Info

Publication number
DE60040040D1
DE60040040D1 DE60040040T DE60040040T DE60040040D1 DE 60040040 D1 DE60040040 D1 DE 60040040D1 DE 60040040 T DE60040040 T DE 60040040T DE 60040040 T DE60040040 T DE 60040040T DE 60040040 D1 DE60040040 D1 DE 60040040D1
Authority
DE
Germany
Prior art keywords
exposure
scanning
exposure apparatus
exposure method
scanning exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60040040T
Other languages
English (en)
Inventor
Michio Kohno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE60040040D1 publication Critical patent/DE60040040D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Toxicology (AREA)
  • Atmospheric Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Public Health (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE60040040T 1999-09-01 2000-08-30 Belichtungsverfahren und Abtastbelichtungsapparat Expired - Fee Related DE60040040D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24715299A JP3548464B2 (ja) 1999-09-01 1999-09-01 露光方法及び走査型露光装置

Publications (1)

Publication Number Publication Date
DE60040040D1 true DE60040040D1 (de) 2008-10-09

Family

ID=17159220

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60040040T Expired - Fee Related DE60040040D1 (de) 1999-09-01 2000-08-30 Belichtungsverfahren und Abtastbelichtungsapparat

Country Status (5)

Country Link
US (1) US6603530B1 (de)
EP (1) EP1081553B1 (de)
JP (1) JP3548464B2 (de)
KR (1) KR20010030209A (de)
DE (1) DE60040040D1 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10140208C2 (de) * 2001-08-16 2003-11-06 Zeiss Carl Optische Anordnung
US7213963B2 (en) 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR20060120629A (ko) 2003-08-28 2006-11-27 가부시키가이샤 니콘 노광방법 및 장치, 그리고 디바이스 제조방법
KR101328356B1 (ko) * 2004-02-13 2013-11-11 가부시키가이샤 니콘 노광 방법 및 장치, 그리고 디바이스 제조 방법
US7312851B2 (en) * 2004-06-23 2007-12-25 Nikon Corporation Projection optical system, exposure apparatus, and exposure method in which a reflective projection optical system has a non-circular aperture stop
WO2006025408A1 (ja) * 2004-08-31 2006-03-09 Nikon Corporation 露光装置及びデバイス製造方法
US20080204682A1 (en) * 2005-06-28 2008-08-28 Nikon Corporation Exposure method and exposure apparatus, and device manufacturing method
US7649611B2 (en) 2005-12-30 2010-01-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7511799B2 (en) * 2006-01-27 2009-03-31 Asml Netherlands B.V. Lithographic projection apparatus and a device manufacturing method
KR100762245B1 (ko) * 2006-09-29 2007-10-01 주식회사 하이닉스반도체 포토마스크의 패턴 결함 수정 방법
US7903234B2 (en) * 2006-11-27 2011-03-08 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and computer program product
SG143178A1 (en) * 2006-11-27 2008-06-27 Asml Netherlands Bv Lithographic apparatus, device manufacturing method and computer program product
KR101492287B1 (ko) 2007-03-27 2015-02-11 칼 짜이스 에스엠테 게엠베하 편평하게 조사된 보정광을 이용한 광학 소자의 보정
US20080285000A1 (en) * 2007-05-17 2008-11-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
NL2005449A (en) * 2009-11-16 2012-04-05 Asml Netherlands Bv Lithographic method and apparatus.
JP5165731B2 (ja) * 2010-06-30 2013-03-21 東京エレクトロン株式会社 局所露光装置及び局所露光方法
NL2007498A (en) 2010-12-23 2012-06-27 Asml Netherlands Bv Lithographic apparatus and method of modifying a beam of radiation within a lithographic apparatus.
JP7378265B2 (ja) * 2019-10-18 2023-11-13 キヤノン株式会社 露光装置、露光方法及び物品の製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5999722A (ja) 1982-11-29 1984-06-08 Canon Inc 半導体焼付露光制御方法
JPH02309626A (ja) * 1989-05-24 1990-12-25 Fujitsu Ltd 露光装置
USRE36799E (en) * 1990-06-13 2000-08-01 Nikon Corporation Projection optical apparatus using plural wavelengths of light
JP3301153B2 (ja) * 1993-04-06 2002-07-15 株式会社ニコン 投影露光装置、露光方法、及び素子製造方法
KR960000179B1 (ko) * 1993-06-12 1996-01-03 현대전자산업주식회사 에너지 절약형 포토마스크
JP3341269B2 (ja) 1993-12-22 2002-11-05 株式会社ニコン 投影露光装置、露光方法、半導体の製造方法及び投影光学系の調整方法
JP3368091B2 (ja) 1994-04-22 2003-01-20 キヤノン株式会社 投影露光装置及びデバイスの製造方法
US5883704A (en) * 1995-08-07 1999-03-16 Nikon Corporation Projection exposure apparatus wherein focusing of the apparatus is changed by controlling the temperature of a lens element of the projection optical system
US5596413A (en) * 1995-08-17 1997-01-21 Lucent Technologies Inc. Sub-micron through-the-lens positioning utilizing out of phase segmented gratings
JP3805829B2 (ja) * 1996-06-05 2006-08-09 株式会社東芝 スキャン露光装置およびスキャン露光方法
JP3790833B2 (ja) 1996-08-07 2006-06-28 株式会社ニコン 投影露光方法及び装置
EP0823662A2 (de) * 1996-08-07 1998-02-11 Nikon Corporation Projektionsbelichtungsapparat
JPH1054932A (ja) 1996-08-08 1998-02-24 Nikon Corp 投影光学装置及びそれを装着した投影露光装置
EP0874283B1 (de) * 1997-04-23 2003-09-03 Nikon Corporation Optischer Belichtungsapparat und optisches Reinigungsverfahren

Also Published As

Publication number Publication date
US6603530B1 (en) 2003-08-05
EP1081553A3 (de) 2004-08-11
JP3548464B2 (ja) 2004-07-28
EP1081553A2 (de) 2001-03-07
EP1081553B1 (de) 2008-08-27
JP2001076993A (ja) 2001-03-23
KR20010030209A (ko) 2001-04-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee