DE60039823D1 - Herstellungsverfahren einer silicium schicht auf einem träger für optische zwecke und dessen umsetzung zur herstellung von optischen komponenten - Google Patents
Herstellungsverfahren einer silicium schicht auf einem träger für optische zwecke und dessen umsetzung zur herstellung von optischen komponentenInfo
- Publication number
- DE60039823D1 DE60039823D1 DE60039823T DE60039823T DE60039823D1 DE 60039823 D1 DE60039823 D1 DE 60039823D1 DE 60039823 T DE60039823 T DE 60039823T DE 60039823 T DE60039823 T DE 60039823T DE 60039823 D1 DE60039823 D1 DE 60039823D1
- Authority
- DE
- Germany
- Prior art keywords
- optical
- implementation
- carrier
- manufacturing
- production
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0054—Processes for devices with an active region comprising only group IV elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
- H01L33/105—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector with a resonant cavity structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/021—Silicon based substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/3027—IV compounds
- H01S5/3031—Si
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3223—IV compounds
- H01S5/3224—Si
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9901559A FR2789517B1 (fr) | 1999-02-10 | 1999-02-10 | Procede de formation sur un support d'une couche de silicium a usage optique et mise en oeuvre du procede pour la realisation de composants optiques |
PCT/FR2000/000278 WO2000048278A1 (fr) | 1999-02-10 | 2000-02-07 | Procede de formation sur un support d'une couche de silicium a usage optique et mise en oeuvre du procede pour la realisation de composants optiques |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60039823D1 true DE60039823D1 (de) | 2008-09-25 |
Family
ID=9541824
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60039823T Expired - Lifetime DE60039823D1 (de) | 1999-02-10 | 2000-02-07 | Herstellungsverfahren einer silicium schicht auf einem träger für optische zwecke und dessen umsetzung zur herstellung von optischen komponenten |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP1070371B1 (de) |
JP (1) | JP4514964B2 (de) |
DE (1) | DE60039823D1 (de) |
FR (1) | FR2789517B1 (de) |
WO (1) | WO2000048278A1 (de) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6436614B1 (en) * | 2000-10-20 | 2002-08-20 | Feng Zhou | Method for the formation of a thin optical crystal layer overlying a low dielectric constant substrate |
FR2855910B1 (fr) * | 2003-06-06 | 2005-07-15 | Commissariat Energie Atomique | Procede d'obtention d'une couche tres mince par amincissement par auto-portage provoque |
FR2855908B1 (fr) * | 2003-06-06 | 2005-08-26 | Soitec Silicon On Insulator | Procede d'obtention d'une structure comprenant au moins un substrat et une couche ultramince |
WO2005020305A2 (en) * | 2003-08-12 | 2005-03-03 | Massachusetts Institute Of Technology | Optical device comprising crystalline semiconductor layer and reflective element |
US7084460B2 (en) * | 2003-11-03 | 2006-08-01 | International Business Machines Corporation | Method for fabricating SiGe-on-insulator (SGOI) and Ge-on-insulator (GOI) substrates |
US7825006B2 (en) * | 2004-05-06 | 2010-11-02 | Cree, Inc. | Lift-off process for GaN films formed on SiC substrates and devices fabricated using the method |
US8617997B2 (en) | 2007-08-21 | 2013-12-31 | Cree, Inc. | Selective wet etching of gold-tin based solder |
JP5381065B2 (ja) * | 2008-12-10 | 2014-01-08 | 信越半導体株式会社 | Soiウェーハの検査方法及びsoiウェーハの製造方法 |
FR2946435B1 (fr) | 2009-06-04 | 2017-09-29 | Commissariat A L'energie Atomique | Procede de fabrication d'images colorees avec une resolution micronique enfouies dans un support tres robuste et tres perenne |
GB2549951B (en) * | 2016-05-03 | 2019-11-20 | Metodiev Lavchiev Ventsislav | Light emitting structures and systems on the basis of group-IV material(s) for the ultra violet and visible spectral range |
FR3061803B1 (fr) * | 2017-01-11 | 2019-08-16 | Soitec | Substrat pour capteur d'image de type face avant et procede de fabrication d'un tel substrat |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2681472B1 (fr) * | 1991-09-18 | 1993-10-29 | Commissariat Energie Atomique | Procede de fabrication de films minces de materiau semiconducteur. |
US5249195A (en) * | 1992-06-30 | 1993-09-28 | At&T Bell Laboratories | Erbium doped optical devices |
US5363398A (en) * | 1993-09-30 | 1994-11-08 | At&T Bell Laboratories | Absorption resonant rare earth-doped micro-cavities |
-
1999
- 1999-02-10 FR FR9901559A patent/FR2789517B1/fr not_active Expired - Fee Related
-
2000
- 2000-02-07 EP EP00901720A patent/EP1070371B1/de not_active Expired - Lifetime
- 2000-02-07 DE DE60039823T patent/DE60039823D1/de not_active Expired - Lifetime
- 2000-02-07 JP JP2000599106A patent/JP4514964B2/ja not_active Expired - Fee Related
- 2000-02-07 WO PCT/FR2000/000278 patent/WO2000048278A1/fr active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
JP4514964B2 (ja) | 2010-07-28 |
JP2002536708A (ja) | 2002-10-29 |
WO2000048278A1 (fr) | 2000-08-17 |
FR2789517A1 (fr) | 2000-08-11 |
EP1070371A1 (de) | 2001-01-24 |
FR2789517B1 (fr) | 2001-03-09 |
EP1070371B1 (de) | 2008-08-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE59803595D1 (de) | Verfahren zur herstellung von Silicium | |
DE60023639D1 (de) | Verfahren zur Herstellung von Körpern mit einer Schicht von aufgebrachten Teilchen | |
DE69908990D1 (de) | Verfahren zur Herstellung von geschlichteten beschichteten keramischen Fasern | |
DE69518548T2 (de) | Verfahren zur Herstellung eines keramischen Substrates | |
DE59700843D1 (de) | Verfahren zur Herstellung von Halbleiterscheiben aus Silicium mit geringer Defektdichte | |
DE10082520T1 (de) | Verfahren zur Herstellung einer ein Glassubstrat enthaltenden Magnetplatte | |
DE69900076T2 (de) | Verfahren zur Herstellung von fluorierten diamantartigen Beschichtungen | |
DE59406949D1 (de) | Verfahren zur Herstellung keramischer Mikrostrukturen aus polymeren Precursoren | |
DE69513459D1 (de) | Verfahren zur Herstellung einer Al-Ge Legierung mit einer WGe Polierstoppschicht | |
DE60039744D1 (de) | Verfahren zur Hersltellung einer Siliziumschicht | |
DE60039823D1 (de) | Herstellungsverfahren einer silicium schicht auf einem träger für optische zwecke und dessen umsetzung zur herstellung von optischen komponenten | |
DE60238399D1 (de) | Verfahren zur herstellung von silicium | |
DE69218072T2 (de) | Gebundene faserige Substrate für Hülle und Verfahren zur Herstellung davon | |
DE69806519T2 (de) | Verfahren zur Herstellung von Siliziumkarbidfasern | |
DE60100514D1 (de) | Verfahren zur Herstellung einer vernetzten Silikonpartikelsuspension | |
DE69812056D1 (de) | Verfahren zur Herstellung von Siliciumkarbidfasern | |
DE69526286T2 (de) | Verfahren zur Herstellung eines keramischen Substrates | |
DE59902444D1 (de) | Verfahren zur Herstellung von beschichteten Kurzfasern | |
DE60024210D1 (de) | Verfahren zur Herstellung von Zahnrädern | |
DE60021928D1 (de) | Verfahren zur Herstellung einer Cordieriet-Keramik mit Wabenstruktur | |
DE69509594D1 (de) | Verfahren zur Herstellung einer Diamantschicht | |
DE60104753D1 (de) | Verfahren zur Herstellung einer dünnen Schicht auf einem Halbleitersubstrat | |
DE69919788D1 (de) | Verfahren zur Herstellung einer Dünnschicht aus Titan- und Siliziumdioxid | |
ATA167791A (de) | Beschichtetes glas und verfahren zur herstellung desselben | |
DE69903297D1 (de) | Verfahren zur Herstellung einer keramischen Folie |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |