DE60039419D1 - Optische teststruktur für messung der ladungsübertragungseffizienz - Google Patents

Optische teststruktur für messung der ladungsübertragungseffizienz

Info

Publication number
DE60039419D1
DE60039419D1 DE60039419T DE60039419T DE60039419D1 DE 60039419 D1 DE60039419 D1 DE 60039419D1 DE 60039419 T DE60039419 T DE 60039419T DE 60039419 T DE60039419 T DE 60039419T DE 60039419 D1 DE60039419 D1 DE 60039419D1
Authority
DE
Germany
Prior art keywords
transfer efficiency
load transfer
test structure
optical test
measuring load
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60039419T
Other languages
German (de)
English (en)
Inventor
John Paul Shepherd
Eric Gordon Stevens
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eastman Kodak Co
Original Assignee
Eastman Kodak Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eastman Kodak Co filed Critical Eastman Kodak Co
Application granted granted Critical
Publication of DE60039419D1 publication Critical patent/DE60039419D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/15Charge-coupled device [CCD] image sensors
    • H10F39/151Geometry or disposition of pixel elements, address lines or gate electrodes
    • H10F39/1515Optical shielding
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/15Charge-coupled device [CCD] image sensors
    • H10F39/153Two-dimensional or three-dimensional array CCD image sensors
    • H10F39/1536Frame transfer
DE60039419T 1999-12-22 2000-12-20 Optische teststruktur für messung der ladungsübertragungseffizienz Expired - Lifetime DE60039419D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US17169899P 1999-12-22 1999-12-22
PCT/US2000/034954 WO2001047022A1 (en) 1999-12-22 2000-12-20 Optical test structure for measuring charge-transfer efficiency

Publications (1)

Publication Number Publication Date
DE60039419D1 true DE60039419D1 (de) 2008-08-21

Family

ID=22624794

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60039419T Expired - Lifetime DE60039419D1 (de) 1999-12-22 2000-12-20 Optische teststruktur für messung der ladungsübertragungseffizienz

Country Status (5)

Country Link
US (1) US6803960B2 (enExample)
EP (1) EP1159760B1 (enExample)
JP (1) JP5309284B2 (enExample)
DE (1) DE60039419D1 (enExample)
WO (1) WO2001047022A1 (enExample)

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US7053458B2 (en) * 2002-04-30 2006-05-30 Ess Technology, Inc. Suppressing radiation charges from reaching dark signal sensor
US7556660B2 (en) 2003-06-11 2009-07-07 James Kevin Shurtleff Apparatus and system for promoting a substantially complete reaction of an anhydrous hydride reactant
US7002231B2 (en) * 2004-02-02 2006-02-21 Micron Technology, Inc. Barrier regions for image sensors
US7902624B2 (en) * 2004-02-02 2011-03-08 Aptina Imaging Corporation Barrier regions for image sensors
US7920185B2 (en) * 2004-06-30 2011-04-05 Micron Technology, Inc. Shielding black reference pixels in image sensors
EP1814653B1 (en) 2004-11-12 2012-07-18 Trulite, Inc. Hydrogen generator cartridge
KR100654342B1 (ko) * 2005-02-07 2006-12-08 삼성전자주식회사 이미지 센서
GB0506564D0 (en) * 2005-03-31 2005-05-04 E2V Tech Uk Ltd Method of identifying a photoelectric sensor array size
JP4732795B2 (ja) * 2005-05-16 2011-07-27 富士フイルム株式会社 固体撮像装置および画像補正方法
US7643072B2 (en) * 2005-08-16 2010-01-05 Fujifilm Corporation Signal processing method for image capturing apparatus, and image capturing apparatus including calculating image transfer efficiency
US7751170B2 (en) * 2006-06-02 2010-07-06 The Board Of Trustees Of The Leland Stanford Junior University Charge management of electrically isolated objects via modulated photoelectric charge transfer
US7651542B2 (en) 2006-07-27 2010-01-26 Thulite, Inc System for generating hydrogen from a chemical hydride
US7648786B2 (en) 2006-07-27 2010-01-19 Trulite, Inc System for generating electricity from a chemical hydride
JP4305516B2 (ja) * 2007-01-30 2009-07-29 ソニー株式会社 固体撮像素子及び固体撮像装置
US8357214B2 (en) 2007-04-26 2013-01-22 Trulite, Inc. Apparatus, system, and method for generating a gas from solid reactant pouches
WO2009015331A1 (en) 2007-07-25 2009-01-29 Trulite, Inc. Apparatus, system, and method to manage the generation and use of hybrid electric power
US20090027504A1 (en) * 2007-07-25 2009-01-29 Suk Hwan Lim System and method for calibrating a camera
US8059180B2 (en) * 2008-11-25 2011-11-15 Omnivision Technologies, Inc. Image sensors having non-uniform light shields
US8610044B2 (en) 2010-12-17 2013-12-17 Truesence Imaging, Inc. Method for producing a linear image sensor having multiple outputs
US8564707B2 (en) * 2010-09-30 2013-10-22 Truesense Imaging, Inc. Linear image sensor with multiple outputs
US8350934B2 (en) 2010-10-21 2013-01-08 Taiwan Semiconductor Manufacturing Co., Ltd. Color image sensor array with color crosstalk test patterns
US8742782B2 (en) 2011-07-27 2014-06-03 International Business Machines Corporation Noncontact electrical testing with optical techniques

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6488167A (en) * 1987-09-29 1989-04-03 Toshiba Corp Characteristic measuring method for solid-state image pickup element
JPH01286584A (ja) * 1988-05-12 1989-11-17 Nec Corp 固体撮像装置
JPH022793A (ja) * 1988-06-15 1990-01-08 Nec Corp 2次元ccd撮像素子の駆動方法
US5521639A (en) 1992-04-30 1996-05-28 Sony Corporation Solid-state imaging apparatus including a reference pixel in the optically-black region
US5369357A (en) 1992-06-18 1994-11-29 Eastman Kodak Company CCD imager with test structure
JPH06205298A (ja) * 1992-11-06 1994-07-22 Sharp Corp 電荷結合型固体撮像装置
JP3326940B2 (ja) 1993-12-07 2002-09-24 ソニー株式会社 固体撮像素子およびその製造方法
EP0712237B1 (en) * 1994-11-12 1999-03-17 Sony Corporation Method of driving a CCD solid state imaging device and video camera using the same
JP3384673B2 (ja) * 1996-03-12 2003-03-10 三洋電機株式会社 ディジタルビデオカメラ
KR100205314B1 (ko) 1996-09-17 1999-07-01 구본준 고체 촬상 소자
JPH11317516A (ja) 1998-05-06 1999-11-16 Sony Corp 固体撮像装置

Also Published As

Publication number Publication date
EP1159760A1 (en) 2001-12-05
US6803960B2 (en) 2004-10-12
WO2001047022A1 (en) 2001-06-28
US20010043274A1 (en) 2001-11-22
JP5309284B2 (ja) 2013-10-09
EP1159760B1 (en) 2008-07-09
JP2003518746A (ja) 2003-06-10

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