DE60038786D1 - Verfahren zur herstellung von koaxialen verbindungsleitungen in einem cmos-prozess - Google Patents

Verfahren zur herstellung von koaxialen verbindungsleitungen in einem cmos-prozess

Info

Publication number
DE60038786D1
DE60038786D1 DE60038786T DE60038786T DE60038786D1 DE 60038786 D1 DE60038786 D1 DE 60038786D1 DE 60038786 T DE60038786 T DE 60038786T DE 60038786 T DE60038786 T DE 60038786T DE 60038786 D1 DE60038786 D1 DE 60038786D1
Authority
DE
Germany
Prior art keywords
connecting lines
cmos process
coaxial connecting
producing coaxial
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60038786T
Other languages
English (en)
Inventor
Milind Weling
Subhas Bothra
Calvin Todd Gabriel
Michael Misheloff
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
NXP BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NXP BV filed Critical NXP BV
Application granted granted Critical
Publication of DE60038786D1 publication Critical patent/DE60038786D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H01L23/5225—Shielding layers formed together with wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6605—High-frequency electrical connections
    • H01L2223/6616—Vertical connections, e.g. vias
    • H01L2223/6622—Coaxial feed-throughs in active or passive substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6605—High-frequency electrical connections
    • H01L2223/6627—Waveguides, e.g. microstrip line, strip line, coplanar line
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1903—Structure including wave guides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49123—Co-axial cable

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE60038786T 1999-10-28 2000-08-16 Verfahren zur herstellung von koaxialen verbindungsleitungen in einem cmos-prozess Expired - Lifetime DE60038786D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/429,540 US6569757B1 (en) 1999-10-28 1999-10-28 Methods for forming co-axial interconnect lines in a CMOS process for high speed applications
PCT/US2000/022516 WO2001031705A1 (en) 1999-10-28 2000-08-16 Methods for forming co-axial interconnect in a cmos process

Publications (1)

Publication Number Publication Date
DE60038786D1 true DE60038786D1 (de) 2008-06-19

Family

ID=23703698

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60038786T Expired - Lifetime DE60038786D1 (de) 1999-10-28 2000-08-16 Verfahren zur herstellung von koaxialen verbindungsleitungen in einem cmos-prozess

Country Status (7)

Country Link
US (1) US6569757B1 (de)
EP (1) EP1145312B1 (de)
JP (1) JP2003513450A (de)
KR (1) KR20010093229A (de)
CN (1) CN1333463C (de)
DE (1) DE60038786D1 (de)
WO (1) WO2001031705A1 (de)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6255852B1 (en) 1999-02-09 2001-07-03 Micron Technology, Inc. Current mode signal interconnects and CMOS amplifier
US7554829B2 (en) * 1999-07-30 2009-06-30 Micron Technology, Inc. Transmission lines for CMOS integrated circuits
US6373740B1 (en) * 1999-07-30 2002-04-16 Micron Technology, Inc. Transmission lines for CMOS integrated circuits
US6975189B1 (en) * 2000-11-02 2005-12-13 Telasic Communications, Inc. On-chip multilayer metal shielded transmission line
US6844236B2 (en) * 2001-07-23 2005-01-18 Agere Systems Inc. Method and structure for DC and RF shielding of integrated circuits
DE10215328A1 (de) * 2001-12-28 2003-07-10 Ihp Gmbh Halbleiterbauelement
US7101770B2 (en) * 2002-01-30 2006-09-05 Micron Technology, Inc. Capacitive techniques to reduce noise in high speed interconnections
JP2003264405A (ja) * 2002-03-08 2003-09-19 Opnext Japan Inc 高周波伝送線路およびそれを用いた電子部品並びに電子装置
US6846738B2 (en) * 2002-03-13 2005-01-25 Micron Technology, Inc. High permeability composite films to reduce noise in high speed interconnects
US7235457B2 (en) * 2002-03-13 2007-06-26 Micron Technology, Inc. High permeability layered films to reduce noise in high speed interconnects
US6900116B2 (en) * 2002-03-13 2005-05-31 Micron Technology Inc. High permeability thin films and patterned thin films to reduce noise in high speed interconnections
US7160577B2 (en) 2002-05-02 2007-01-09 Micron Technology, Inc. Methods for atomic-layer deposition of aluminum oxides in integrated circuits
DE10220653A1 (de) * 2002-05-08 2003-11-27 Infineon Technologies Ag Integrierte Leiterbahnanordnung
KR100474853B1 (ko) * 2003-01-29 2005-03-10 삼성전자주식회사 디씨 옵셋을 줄이기 위한 원칩화된 다이렉트 컨버젼송수신기 및 그 제조방법
US6970053B2 (en) * 2003-05-22 2005-11-29 Micron Technology, Inc. Atomic layer deposition (ALD) high permeability layered magnetic films to reduce noise in high speed interconnection
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
US8168891B1 (en) * 2007-10-26 2012-05-01 Force10 Networks, Inc. Differential trace profile for printed circuit boards
TWI340002B (en) * 2008-04-07 2011-04-01 Unimicron Technology Corp Circuit board and manufacturing method thereof
US8279025B2 (en) * 2008-12-09 2012-10-02 Taiwan Semiconductor Manufacturing Company, Ltd. Slow-wave coaxial transmission line having metal shield strips and dielectric strips with minimum dimensions
US9349636B2 (en) 2013-09-26 2016-05-24 Intel Corporation Interconnect wires including relatively low resistivity cores
WO2017105446A1 (en) * 2015-12-16 2017-06-22 Intel Corporation Improved package power delivery using plane and shaped vias

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6196782A (ja) 1984-10-17 1986-05-15 Agency Of Ind Science & Technol 超電導集積回路用配線
JPS6196781A (ja) 1984-10-17 1986-05-15 Agency Of Ind Science & Technol 超電導集積回路用配線構造
JPH01290238A (ja) 1988-05-18 1989-11-22 Matsushita Electron Corp 半導体装置
US5000818A (en) * 1989-08-14 1991-03-19 Fairchild Semiconductor Corporation Method of fabricating a high performance interconnect system for an integrated circuit
US5117276A (en) * 1989-08-14 1992-05-26 Fairchild Camera And Instrument Corp. High performance interconnect system for an integrated circuit
JPH04267586A (ja) * 1991-02-22 1992-09-24 Nec Corp 同軸配線パターンおよびその形成方法
US5363550A (en) 1992-12-23 1994-11-15 International Business Machines Corporation Method of Fabricating a micro-coaxial wiring structure
GB2277832B (en) 1993-04-27 1997-01-15 British Aerospace Thin film multi-layer interconnect
JPH08125412A (ja) 1994-10-19 1996-05-17 Mitsubishi Electric Corp 伝送線路，及びその製造方法
US5665644A (en) 1995-11-03 1997-09-09 Micron Technology, Inc. Semiconductor processing method of forming electrically conductive interconnect lines and integrated circuitry
US5729047A (en) 1996-03-25 1998-03-17 Micron Technology, Inc. Method and structure for providing signal isolation and decoupling in an integrated circuit device
US5811882A (en) * 1996-09-24 1998-09-22 Philips Electronics North America Corporation On-chip shielding coaxial conductors for mixed-signal IC
US6143616A (en) * 1997-08-22 2000-11-07 Micron Technology, Inc. Methods of forming coaxial integrated circuitry interconnect lines
US6060383A (en) * 1998-08-10 2000-05-09 Nogami; Takeshi Method for making multilayered coaxial interconnect structure

Also Published As

Publication number Publication date
US6569757B1 (en) 2003-05-27
WO2001031705A1 (en) 2001-05-03
CN1333463C (zh) 2007-08-22
JP2003513450A (ja) 2003-04-08
KR20010093229A (ko) 2001-10-27
CN1342330A (zh) 2002-03-27
EP1145312A1 (de) 2001-10-17
EP1145312B1 (de) 2008-05-07

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