DE60030024D1 - Lithographisches Verfahren zur Herstellung von Bauelementen mit Dunkelfeld-Beleuchtung und Gerät dafür - Google Patents
Lithographisches Verfahren zur Herstellung von Bauelementen mit Dunkelfeld-Beleuchtung und Gerät dafürInfo
- Publication number
- DE60030024D1 DE60030024D1 DE60030024T DE60030024T DE60030024D1 DE 60030024 D1 DE60030024 D1 DE 60030024D1 DE 60030024 T DE60030024 T DE 60030024T DE 60030024 T DE60030024 T DE 60030024T DE 60030024 D1 DE60030024 D1 DE 60030024D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacture
- devices
- dark field
- apparatus therefor
- lithographic process
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/34—Phase-edge PSM, e.g. chromeless PSM; Preparation thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
- G03F7/701—Off-axis setting using an aperture
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70125—Use of illumination settings tailored to particular mask patterns
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70325—Resolution enhancement techniques not otherwise provided for, e.g. darkfield imaging, interfering beams, spatial frequency multiplication, nearfield lenses or solid immersion lenses
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US283528 | 1999-04-01 | ||
US09/283,528 US6379868B1 (en) | 1999-04-01 | 1999-04-01 | Lithographic process for device fabrication using dark-field illumination |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60030024D1 true DE60030024D1 (de) | 2006-09-28 |
DE60030024T2 DE60030024T2 (de) | 2007-03-29 |
Family
ID=23086465
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60030024T Expired - Lifetime DE60030024T2 (de) | 1999-04-01 | 2000-03-22 | Lithographisches Verfahren zur Herstellung von Bauelementen mit Dunkelfeld-Beleuchtung und Gerät dafür |
Country Status (5)
Country | Link |
---|---|
US (1) | US6379868B1 (de) |
EP (1) | EP1041443B1 (de) |
JP (1) | JP3387888B2 (de) |
KR (1) | KR100367185B1 (de) |
DE (1) | DE60030024T2 (de) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7242464B2 (en) * | 1999-06-24 | 2007-07-10 | Asml Holdings N.V. | Method for characterizing optical systems using holographic reticles |
KR100313280B1 (ko) * | 1999-10-25 | 2001-11-07 | 한신혁 | 반도체 장치의 전도배선 마스크 제조방법 |
WO2001037053A1 (en) * | 1999-11-15 | 2001-05-25 | Asm Lithography B.V. | Imaging method using phase boundary masking with modified illumination |
US20020041377A1 (en) * | 2000-04-25 | 2002-04-11 | Nikon Corporation | Aerial image measurement method and unit, optical properties measurement method and unit, adjustment method of projection optical system, exposure method and apparatus, making method of exposure apparatus, and device manufacturing method |
EP1301830A2 (de) * | 2000-07-19 | 2003-04-16 | Silicon Valley Group, Inc. | Verfahren zur charakterisierung optischer systeme unter verwendung holographischer retikel |
JP4281041B2 (ja) * | 2001-10-01 | 2009-06-17 | セイコーエプソン株式会社 | 位相格子マスク |
KR100614295B1 (ko) | 2001-12-21 | 2006-08-21 | 에이에스엠엘 네델란즈 비.브이. | 디바이스 제조방법, 그 디바이스 및 그를 위한 리소그래피장치 |
US6929961B2 (en) * | 2003-12-10 | 2005-08-16 | Hitachi Global Storage Technologies Netherlands B. V. | Dual function array feature for CMP process control and inspection |
KR100574966B1 (ko) * | 2004-01-20 | 2006-05-02 | 삼성전자주식회사 | 포토마스크 및 이를 이용한 투과율 및 위상 조절 방법 |
US7384725B2 (en) * | 2004-04-02 | 2008-06-10 | Advanced Micro Devices, Inc. | System and method for fabricating contact holes |
KR100614651B1 (ko) * | 2004-10-11 | 2006-08-22 | 삼성전자주식회사 | 회로 패턴의 노광을 위한 장치 및 방법, 사용되는포토마스크 및 그 설계 방법, 그리고 조명계 및 그 구현방법 |
JP2006154757A (ja) * | 2004-10-26 | 2006-06-15 | Seiko Epson Corp | マイクロレンズ基板の製造方法、マイクロレンズ基板、透過型スクリーンおよびリア型プロジェクタ |
DE102005023714A1 (de) * | 2005-05-19 | 2006-11-23 | Carl Zeiss Smt Ag | Projektionsmikrolithographieanlage und Verfahren zur Erzielung eines verbesserten Auflösungsvermögens in einer Projektionsmikrolithographieanlage |
JP4425239B2 (ja) * | 2005-05-16 | 2010-03-03 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置およびデバイス製造方法 |
US20070046917A1 (en) * | 2005-08-31 | 2007-03-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method that compensates for reticle induced CDU |
US20070116350A1 (en) * | 2005-11-21 | 2007-05-24 | Cheverton Mark A | Method for detecting the alignment of films for automated defect detection |
US20070115464A1 (en) * | 2005-11-21 | 2007-05-24 | Harding Kevin G | System and method for inspection of films |
US7371590B2 (en) * | 2005-11-21 | 2008-05-13 | General Electric Company | Integrated inspection system and defect correction method |
US20070114693A1 (en) * | 2005-11-21 | 2007-05-24 | Buckley Paul W | Methods for improving mold quality for use in the manufacture of liquid crystal display components |
US20070115460A1 (en) * | 2005-11-21 | 2007-05-24 | Capaldo Kevin P | Method for examining molds and apparatus for accomplishing the same |
EP1857879A1 (de) * | 2006-05-15 | 2007-11-21 | Advanced Mask Technology Center GmbH & Co. KG | Beleuchtungssystem und Photolithographiegerät |
US7867912B2 (en) * | 2007-02-20 | 2011-01-11 | Qimonda Ag | Methods of manufacturing semiconductor structures |
US8404714B2 (en) | 2008-01-04 | 2013-03-26 | Novus International, Inc. | Combinations to improve animal health and performance |
NL2009168A (en) * | 2011-08-19 | 2013-02-21 | Asml Netherlands Bv | Lithographic apparatus and method. |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS514867B2 (de) * | 1971-07-28 | 1976-02-16 | ||
US4947413A (en) * | 1988-07-26 | 1990-08-07 | At&T Bell Laboratories | Resolution doubling lithography technique |
JP3033135B2 (ja) | 1990-06-13 | 2000-04-17 | 株式会社ニコン | 投影露光装置及び方法 |
US5343292A (en) * | 1990-10-19 | 1994-08-30 | University Of New Mexico | Method and apparatus for alignment of submicron lithographic features |
EP0486316B1 (de) * | 1990-11-15 | 2000-04-19 | Nikon Corporation | Verfahren und Vorrichtung zur Projektionsbelichtung |
JPH0567557A (ja) * | 1991-09-05 | 1993-03-19 | Nec Corp | 円弧状暗視野照明装置 |
KR970003593B1 (en) * | 1992-09-03 | 1997-03-20 | Samsung Electronics Co Ltd | Projection exposure method and device using mask |
JPH06333803A (ja) * | 1992-09-18 | 1994-12-02 | Sharp Corp | 投影型露光装置用フィルター |
JPH06161092A (ja) * | 1992-11-17 | 1994-06-07 | Nippon Steel Corp | 露光用マスク |
US5320918A (en) * | 1992-12-31 | 1994-06-14 | At&T Bell Laboratories | Optical lithographical imaging system including optical transmission diffraction devices |
KR960011461B1 (ko) * | 1993-06-25 | 1996-08-22 | 현대전자산업 주식회사 | 회절빛 제어 마스크 |
US5667918A (en) | 1993-09-27 | 1997-09-16 | Micron Technology, Inc. | Method of lithography using reticle pattern blinders |
JP2870390B2 (ja) * | 1993-11-26 | 1999-03-17 | 日本電気株式会社 | 投影露光装置 |
JPH08316124A (ja) * | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
US5717518A (en) | 1996-07-22 | 1998-02-10 | Kla Instruments Corporation | Broad spectrum ultraviolet catadioptric imaging system |
US5807649A (en) | 1996-10-31 | 1998-09-15 | International Business Machines Corporation | Lithographic patterning method and mask set therefor with light field trim mask |
JPH10233361A (ja) * | 1996-12-16 | 1998-09-02 | Toshiba Corp | 露光方法と露光用マスク |
JP3588212B2 (ja) * | 1996-12-20 | 2004-11-10 | 株式会社ルネサステクノロジ | 露光用マスク及びその作製方法並びに半導体装置の製造方法 |
US5821014A (en) | 1997-02-28 | 1998-10-13 | Microunity Systems Engineering, Inc. | Optical proximity correction method for intermediate-pitch features using sub-resolution scattering bars on a mask |
US5851701A (en) * | 1997-04-01 | 1998-12-22 | Micron Technology, Inc. | Atom lithographic mask having diffraction grating and attenuated phase shifters |
-
1999
- 1999-04-01 US US09/283,528 patent/US6379868B1/en not_active Expired - Lifetime
-
2000
- 2000-03-22 DE DE60030024T patent/DE60030024T2/de not_active Expired - Lifetime
- 2000-03-22 EP EP00302327A patent/EP1041443B1/de not_active Expired - Lifetime
- 2000-03-30 JP JP2000093711A patent/JP3387888B2/ja not_active Expired - Fee Related
- 2000-03-31 KR KR1020000016832A patent/KR100367185B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JP2000299283A (ja) | 2000-10-24 |
JP3387888B2 (ja) | 2003-03-17 |
US6379868B1 (en) | 2002-04-30 |
KR100367185B1 (ko) | 2003-01-15 |
EP1041443B1 (de) | 2006-08-16 |
KR20010006940A (ko) | 2001-01-26 |
EP1041443A2 (de) | 2000-10-04 |
DE60030024T2 (de) | 2007-03-29 |
EP1041443A3 (de) | 2003-10-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |