DE60028156D1 - Niedrige leistungsspannungsreferenz mit verbesserter versorgungsspannungsunterdrückung - Google Patents

Niedrige leistungsspannungsreferenz mit verbesserter versorgungsspannungsunterdrückung

Info

Publication number
DE60028156D1
DE60028156D1 DE60028156T DE60028156T DE60028156D1 DE 60028156 D1 DE60028156 D1 DE 60028156D1 DE 60028156 T DE60028156 T DE 60028156T DE 60028156 T DE60028156 T DE 60028156T DE 60028156 D1 DE60028156 D1 DE 60028156D1
Authority
DE
Germany
Prior art keywords
low power
improved supply
supply voltage
suppression
power voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60028156T
Other languages
English (en)
Inventor
W Yee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Microchip Technology Inc
Original Assignee
Micrel Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micrel Inc filed Critical Micrel Inc
Application granted granted Critical
Publication of DE60028156D1 publication Critical patent/DE60028156D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/245—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/247—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the supply voltage
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/267—Current mirrors using both bipolar and field-effect technology

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Electrical Variables (AREA)
DE60028156T 1999-05-21 2000-05-17 Niedrige leistungsspannungsreferenz mit verbesserter versorgungsspannungsunterdrückung Expired - Lifetime DE60028156D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/316,529 US6150871A (en) 1999-05-21 1999-05-21 Low power voltage reference with improved line regulation
PCT/US2000/013949 WO2000072103A1 (en) 1999-05-21 2000-05-17 Low power voltage reference with improved line regulation

Publications (1)

Publication Number Publication Date
DE60028156D1 true DE60028156D1 (de) 2006-06-29

Family

ID=23229438

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60028156T Expired - Lifetime DE60028156D1 (de) 1999-05-21 2000-05-17 Niedrige leistungsspannungsreferenz mit verbesserter versorgungsspannungsunterdrückung

Country Status (4)

Country Link
US (1) US6150871A (de)
EP (1) EP1097415B1 (de)
DE (1) DE60028156D1 (de)
WO (1) WO2000072103A1 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6292050B1 (en) 1997-01-29 2001-09-18 Cardiac Pacemakers, Inc. Current and temperature compensated voltage reference having improved power supply rejection
US6381491B1 (en) 2000-08-18 2002-04-30 Cardiac Pacemakers, Inc. Digitally trimmable resistor for bandgap voltage reference
DE10057844A1 (de) * 2000-11-22 2002-06-06 Infineon Technologies Ag Verfahren zum Abgleichen eines BGR-Schaltkreises und BGR-Schaltkreis
US6351111B1 (en) * 2001-04-13 2002-02-26 Ami Semiconductor, Inc. Circuits and methods for providing a current reference with a controlled temperature coefficient using a series composite resistor
FR2832819B1 (fr) * 2001-11-26 2004-01-02 St Microelectronics Sa Source de courant compensee en temperature
US6650176B1 (en) * 2002-05-28 2003-11-18 National Semiconductor Corporation N-well resistor leakage cancellation
ITRM20020500A1 (it) * 2002-10-04 2004-04-05 Micron Technology Inc Riferimento di tensione del tipo band-gap a corrente ultrabassa.
US6844711B1 (en) 2003-04-15 2005-01-18 Marvell International Ltd. Low power and high accuracy band gap voltage circuit
US6919753B2 (en) * 2003-08-25 2005-07-19 Texas Instruments Incorporated Temperature independent CMOS reference voltage circuit for low-voltage applications
JP4263056B2 (ja) * 2003-08-26 2009-05-13 株式会社リコー 基準電圧発生回路
US6984869B2 (en) * 2003-12-08 2006-01-10 Lsi Logic Corporation High performance diode implanted voltage controlled p-type diffusion resistor
US7265529B2 (en) 2004-08-19 2007-09-04 Micron Technologgy, Inc. Zero power start-up circuit
US7372316B2 (en) * 2004-11-25 2008-05-13 Stmicroelectronics Pvt. Ltd. Temperature compensated reference current generator
US8536874B1 (en) * 2005-09-30 2013-09-17 Marvell International Ltd. Integrated circuit voltage domain detection system and associated methodology
JP4761458B2 (ja) * 2006-03-27 2011-08-31 セイコーインスツル株式会社 カスコード回路および半導体装置
FR2918504B1 (fr) * 2007-07-06 2009-11-27 St Microelectronics Sa Resistance integree diffusee
US7893754B1 (en) * 2009-10-02 2011-02-22 Power Integrations, Inc. Temperature independent reference circuit
US8634218B2 (en) * 2009-10-06 2014-01-21 Power Integrations, Inc. Monolithic AC/DC converter for generating DC supply voltage
US8310845B2 (en) * 2010-02-10 2012-11-13 Power Integrations, Inc. Power supply circuit with a control terminal for different functional modes of operation
US8786355B2 (en) * 2011-11-10 2014-07-22 Qualcomm Incorporated Low-power voltage reference circuit
US9455621B2 (en) 2013-08-28 2016-09-27 Power Integrations, Inc. Controller IC with zero-crossing detector and capacitor discharge switching element
US9641129B2 (en) 2015-09-16 2017-05-02 Nxp Usa, Inc. Low power circuit for amplifying a voltage without using resistors
EP3513489A1 (de) 2016-09-15 2019-07-24 Power Integrations, Inc. Stromwandlersteuergerät mit stabilitätskompensation
JP6902917B2 (ja) * 2017-04-25 2021-07-14 新日本無線株式会社 定電圧電源回路

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US34772A (en) * 1862-03-25 Improved burning-fluid
NL7214136A (de) * 1972-10-19 1974-04-23
US4588941A (en) * 1985-02-11 1986-05-13 At&T Bell Laboratories Cascode CMOS bandgap reference
DE4005756A1 (de) * 1989-04-01 1990-10-04 Bosch Gmbh Robert Praezisions-referenzspannungsquelle
US5278491A (en) * 1989-08-03 1994-01-11 Kabushiki Kaisha Toshiba Constant voltage circuit
JP2804162B2 (ja) * 1989-09-08 1998-09-24 株式会社日立製作所 定電流定電圧回路
US5084665A (en) * 1990-06-04 1992-01-28 Motorola, Inc. Voltage reference circuit with power supply compensation
CA2066929C (en) * 1991-08-09 1996-10-01 Katsuji Kimura Temperature sensor circuit and constant-current circuit
JP2861593B2 (ja) * 1992-01-29 1999-02-24 日本電気株式会社 基準電圧発生回路
US5451860A (en) * 1993-05-21 1995-09-19 Unitrode Corporation Low current bandgap reference voltage circuit
US5506496A (en) * 1994-10-20 1996-04-09 Siliconix Incorporated Output control circuit for a voltage regulator
TW300348B (de) * 1995-03-17 1997-03-11 Maxim Integrated Products
US5686823A (en) * 1996-08-07 1997-11-11 National Semiconductor Corporation Bandgap voltage reference circuit
US5767664A (en) * 1996-10-29 1998-06-16 Unitrode Corporation Bandgap voltage reference based temperature compensation circuit

Also Published As

Publication number Publication date
EP1097415A1 (de) 2001-05-09
WO2000072103A1 (en) 2000-11-30
EP1097415B1 (de) 2006-05-24
US6150871A (en) 2000-11-21

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Legal Events

Date Code Title Description
8332 No legal effect for de